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公开(公告)号：US5434733A
公开(公告)日：1995-07-18
申请号：US198820
申请日：1994-02-18
CPC分类号： G11B5/3925 , G11B5/245 , G11B5/3183 , G11B5/3967
摘要： A planar silicon magnetoresistive read/write head has separate read and write gaps that can be individually optimized. The write gap includes a write gap shunt that suppresses signals that are read across the write gap without interfering with the ability of the head to generate write signals at the write gap. The head retains both the advantages of removing the magnetoresistive element from the air bearing surface to avoid wear, shorting, and corrosion, and to eliminate cross-track asymmetry, associated with dual gap magnetoresistive heads; and the advantages of low cost fabrication and high area density, associated with silicon planar head structures.
摘要翻译： 平面硅磁阻读/写头具有单独的读和写间隙，可以单独优化。 写间隙包括写间隙分流，其抑制在写间隙读取的信号，而不干扰头在写间隙处产生写信号的能力。 头部保留从空气轴承表面去除磁阻元件的优点，以避免磨损，短路和腐蚀，并消除与双间隙磁阻头相关的交叉磁道不对称性; 以及与硅平面头部结构相关的低成本制造和高面积密度的优点。
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公开(公告)号：US5491606A
公开(公告)日：1996-02-13
申请号：US410382
申请日：1995-03-27
CPC分类号： G11B5/3903 , G11B5/3183 , G11B5/3925
摘要： Providing a magnetic head with a yoke and a gap structure coupled to a substrate that is positioned above a magnetic medium. The gap structure includes one or more lips, a first and a second ferromagnetic pole, and a magnetoresistive element (MRE). The magnetoresistive element is removed from the air-bearing surface of the magnetic head. For the embodiment with two lips, the two lips define a head gap. Each ferromagnetic pole is connected to one lip. The two poles are separated by a distance greater than the length of the gap, and each pole has a thickness that is greater than the thickness of each lip. The MRE is substantially coupled magnetically, but not electrically to the two poles at a location where the two poles are separated by a distance greater than the length of the gap.
摘要翻译： 提供具有轭的磁头和耦合到位于磁介质上方的衬底的间隙结构。 间隙结构包括一个或多个唇缘，第一和第二铁磁极以及磁阻元件（MRE）。 磁阻元件从磁头的空气轴承表面去除。 对于具有两个嘴唇的实施例，两个唇缘限定头部间隙。 每个铁磁极连接到一个唇缘。 两个极分开大于间隙长度的距离，每个极的厚度大于每个唇的厚度。 在两极被间隔大于间隙长度的位置处，MRE基本上磁耦合耦合，但不与两极电连接。
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公开(公告)号：US09423709B2
公开(公告)日：2016-08-23
申请号：US12741550
申请日：2007-11-30
CPC分类号： G03G9/0806 , C09B67/0013 , C09C1/56 , G03G9/0825 , G03G9/08726 , G03G9/08795 , G03G9/08797
摘要： Toner compositions for electrophotographic printing are disclosed, along with methods for making such toners, and printing systems utilizing them. The disclosed process imparts qualities to the toner making it more efficiently and effectively incorporated into printed images.
摘要翻译： 公开了用于电子照相印刷的调色剂组合物，以及制备这种调色剂的方法以及利用它们的印刷系统。 所公开的方法赋予调色剂的质量，使其更有效和有效地并入印刷图像中。
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公开(公告)号：US08372494B2
公开(公告)日：2013-02-12
申请号：US12608983
申请日：2009-10-29
IPC分类号： B41M5/00
CPC分类号： B41M5/506 , B41M7/0009
摘要： An inkjet print medium includes a base substrate, a layer of a deinking solution at least partially diffused into the base substrate, and an ink-receiving layer established on the layer of the deinking solution. The deinking solution includes a flocculant in an amount ranging from about 0.1 wt. % to about 40 wt. % of a total wt. % of the deinking solution.
摘要翻译： 喷墨打印介质包括基底基底，至少部分地扩散到基底基底中的脱墨溶液层以及设置在脱墨溶液层上的墨接收层。 脱墨溶液包括絮凝剂，其量为约0.1wt。 ％至约40wt。 ％的总重量。 ％的脱墨溶液。
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公开(公告)号：US06791872B2
公开(公告)日：2004-09-14
申请号：US10652446
申请日：2003-08-29
IPC分类号： G11C1100
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06785160B1
公开(公告)日：2004-08-31
申请号：US10425352
申请日：2003-04-29
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： The invention includes a method of providing magnetic stability of a memory cell. The memory cell is generally located proximate to a conductive line, and proximate to a write mechanism that can set a magnetic state of the memory cell. The method includes receiving a representation of a maximum magnetic field intensity available from the write mechanism. A desirable placement of the memory cell relative to the conductive line can be generated for providing stability of the memory cell, while still allowing the write mechanism to change the magnetic state of the memory cell.
摘要翻译： 本发明包括提供存储单元的磁稳定性的方法。 存储单元通常位于导线附近，并且靠近能够设置存储单元的磁状态的写入机构。 该方法包括接收从写入机构可获得的最大磁场强度的表示。 可以产生存储单元相对于导线的理想布置，以便提供存储单元的稳定性，同时仍允许写入机构改变存储单元的磁状态。
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公开(公告)号：US06608790B2
公开(公告)日：2003-08-19
申请号：US09998216
申请日：2001-12-03
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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9.发明授权公开(公告)号：US06577549B1
公开(公告)日：2003-06-10
申请号：US10254559
申请日：2002-09-25
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
摘要翻译： 存储器件包括具有衬底的存储器阵列，设置在衬底上的存储器单元阵列，耦合到存储器单元的行导体和耦合到存储器单元的列导体。 存储器件还包括响应于存储器阵列中的温度变化产生可变写入电流的电流源。 随着阵列温度的变化，产生可变写入电流以适应存储器单元的矫顽力变化。 电流源可以包括温度传感器，其向电流传感器提供连续的即时输出，以确保精确地调整由电流源产生的写入电流。 不需要停止存储器件的操作来校准电流源。 此外，电流源提供对写入电流的精确调整，因为温度传感器用于产生输出的温度可以同时产生写入电流。
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10.发明授权Magneto-resistive device including soft reference layer having embedded conductors 有权磁阻器件包括具有嵌入导体的软参考层公开(公告)号：US06504221B1
公开(公告)日：2003-01-07
申请号：US09963932
申请日：2001-09-25
IPC分类号： G11C1115
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/222
摘要： A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
摘要翻译： 磁存储器件包括具有可以在两个方向中的任一个方向上定向的磁化的数据铁磁层，参考层和数据和参考层之间的间隔层。 参考层包括电介质层，由电介质层分开的第一和第二导体以及第一和第二导体上的铁磁包层。 可以通过将参考层的磁化临时设置为已知取向来读取存储器件，并且确定器件的电阻状态。
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