公开(公告)号：US20090004836A1

公开(公告)日：2009-01-01

申请号：US11771190

申请日：2007-06-29

申请人： Vikram Singh ,  Timothy Miller ,  Bernard Lindsay

发明人： Vikram Singh ,  Timothy Miller ,  Bernard Lindsay

IPC分类号： H01L21/26 ,  C23C16/00 ,  H05H1/24

CPC分类号： C23C14/345 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32412 ,  H01L21/32136

摘要： A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate.

摘要翻译： 等离子体掺杂装置包括脉冲电源，其生成具有第一功率电平的第一周期和具有第二功率电平的第二周期的脉冲波形。 等离子体源在第一周期期间产生具有第一功率电平的脉冲等离子体，并且在第二周期期间产生第二功率电平。 偏置电压电源在与支撑衬底的压板电连接的输出端产生偏置电压波形。 偏置电压波形在第一时段期间具有第一电压，在第二周期期间具有将等离子体中的离子吸引到衬底以进行等离子体掺杂的具有负电位的第二电压。 选择RF波形的第一和第二功率电平中的至少一个以至少部分地中和在衬底上累积的电荷。

公开(公告)号：US20070227231A1

公开(公告)日：2007-10-04

申请号：US11678524

申请日：2007-02-23

申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

IPC分类号： G01N27/26 ,  G01N33/00

CPC分类号： H01J37/32422 ,  H01J37/32935

摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US09123509B2

公开(公告)日：2015-09-01

申请号：US13157005

申请日：2011-06-09

申请人： George D. Papasouliotis ,  Kamal Hadidi ,  Helen L. Maynard ,  Ludovic Godet ,  Vikram Singh ,  Timothy J. Miller ,  Bernard Lindsay

发明人： George D. Papasouliotis ,  Kamal Hadidi ,  Helen L. Maynard ,  Ludovic Godet ,  Vikram Singh ,  Timothy J. Miller ,  Bernard Lindsay

IPC分类号： H01J37/32

CPC分类号： H01J37/32146 ,  H01J37/32412 ,  H01J37/3244

摘要： Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

摘要翻译： 公开了用于等离子体处理衬底的技术。 在一个特定的示例性实施例中，该技术可以通过包括将进料气体接近等离子体源的方法来实现，其中进料气体可以包括第一和第二物质，其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形，其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平，并且在第二脉冲持续时间期间具有第二功率电平，其中所述第二功率电平可以 与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。

公开(公告)号：US07586100B2

公开(公告)日：2009-09-08

申请号：US12029710

申请日：2008-02-12

申请人： Deven M. Raj ,  Ludovic Godet ,  Bernard Lindsay ,  Timothy Miller ,  George Papasouliotis

发明人： Deven M. Raj ,  Ludovic Godet ,  Bernard Lindsay ,  Timothy Miller ,  George Papasouliotis

IPC分类号： H01J49/40 ,  G01N27/26 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.

摘要翻译： 使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。 用法拉第剂量测定系统测量影响底物的总数离子。 从测量的离子光谱确定植入物轮廓。 从测量的离子总数和计算出的植入物轮廓确定综合剂量。 响应于计算的积分剂量修改至少一个等离子体掺杂参数。

公开(公告)号：US20090200461A1

公开(公告)日：2009-08-13

申请号：US12029710

申请日：2008-02-12

申请人： Deven M. Raj ,  Ludovic Godet ,  Bernard Lindsay ,  Timothy Miller ,  George D. Papasouliotis

发明人： Deven M. Raj ,  Ludovic Godet ,  Bernard Lindsay ,  Timothy Miller ,  George D. Papasouliotis

IPC分类号： B01D59/44

CPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.

摘要翻译： 使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。 用法拉第剂量测定系统测量影响底物的总数离子。 从测量的离子光谱确定植入物轮廓。 从测量的离子总数和计算出的植入物轮廓确定综合剂量。 响应于计算的积分剂量修改至少一个等离子体掺杂参数。