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公开(公告)号：US09123509B2
公开(公告)日：2015-09-01
申请号：US13157005
申请日：2011-06-09
申请人： George D. Papasouliotis , Kamal Hadidi , Helen L. Maynard , Ludovic Godet , Vikram Singh , Timothy J. Miller , Bernard Lindsay
发明人： George D. Papasouliotis , Kamal Hadidi , Helen L. Maynard , Ludovic Godet , Vikram Singh , Timothy J. Miller , Bernard Lindsay
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32412 , H01J37/3244
摘要： Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.
摘要翻译： 公开了用于等离子体处理衬底的技术。 在一个特定的示例性实施例中，该技术可以通过包括将进料气体接近等离子体源的方法来实现，其中进料气体可以包括第一和第二物质，其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形，其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平，并且在第二脉冲持续时间期间具有第二功率电平，其中所述第二功率电平可以 与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。
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公开(公告)号：US20110086501A1
公开(公告)日：2011-04-14
申请号：US12902250
申请日：2010-10-12
IPC分类号： H01L21/30
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译： 公开了一种处理具有水平和非水平表面的衬底的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。 该膜的存在可能不利地改变基材的性质。 为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。 该材料修饰步骤可以代替或补充蚀刻工艺。
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公开(公告)号：US08679960B2
公开(公告)日：2014-03-25
申请号：US12902250
申请日：2010-10-12
IPC分类号： H01L21/425 , H01L21/38
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译： 公开了一种处理具有水平和非水平表面的衬底的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。 该膜的存在可能不利地改变基材的性质。 为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。 该材料修饰步骤可以代替或补充蚀刻工艺。
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4.发明申请公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译： 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。
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5.发明授权System and method for selectively controlling ion composition of ion sources 有权用于选择性地控制离子源的离子组成的系统和方法公开(公告)号：US08664561B2
公开(公告)日：2014-03-04
申请号：US12496080
申请日：2009-07-01
IPC分类号： B23K10/00
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译： 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。
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公开(公告)号：US20090061605A1
公开(公告)日：2009-03-05
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。
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公开(公告)号：US07687787B2
公开(公告)日：2010-03-30
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic Godet , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic Godet , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01J37/317 , H01L21/265 , H05H1/24
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。
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8.发明申请PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL 审中-公开脉冲沉积和再结晶和使用晶体/非晶材料的太阳能电池设计公开(公告)号：US20110039034A1
公开(公告)日：2011-02-17
申请号：US12538913
申请日：2009-08-11
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/0259 , H01L21/02667 , H01L21/2236 , H01L31/0725 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.
摘要翻译： 公开了一种在衬底上沉积和结晶材料的方法。 在特定实施例中，该方法可以包括产生具有沉积相关物质和能量携带物质的等离子体。 在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。 在第二时间段期间，向衬底施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。 可以重复该过程，直到达到足够的厚度。 在另一个实施例中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。 在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。
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公开(公告)号：US08188445B2
公开(公告)日：2012-05-29
申请号：US12848354
申请日：2010-08-02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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10.发明申请METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION 有权使用离子注入修饰衬底缓冲特征的方法和系统公开(公告)号：US20110223546A1
公开(公告)日：2011-09-15
申请号：US13046136
申请日：2011-03-11
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。
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