公开(公告)号：US08383322B2

公开(公告)日：2013-02-26

申请号：US11427017

申请日：2006-06-28

Applicant: Ching-Yu Chang ,  Vincent Yu

Inventor： Ching-Yu Chang ,  Vincent Yu

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/70341

Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to neutralize the effect of undesired elements that diffused into the resist layer during the immersion exposure. After treatment, a post-exposure bake and a development step are used.

Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。 曝光后，使用处理工艺来中和在浸没曝光期间扩散到抗蚀剂层中的不期望的元素的影响。 处理后，使用曝光后烘烤和显影步骤。

公开(公告)号：US07691559B2

公开(公告)日：2010-04-06

申请号：US11337986

申请日：2006-01-24

Applicant: Ching-Yu Chang ,  C. C. Ke ,  Vincent Yu

Inventor： Ching-Yu Chang ,  C. C. Ke ,  Vincent Yu

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/2041 ,  G03F7/162 ,  G03F7/168 ,  G03F7/70341 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.

Abstract translation: 提供了在半导体晶片上进行浸渍光刻的方法。 该方法包括在半导体晶片的表面上提供一层抗蚀剂。 接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。 然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

公开(公告)号：USD681440S1

公开(公告)日：2013-05-07

申请号：US29393073

申请日：2011-05-31

Applicant: Vincent Yu

Designer： Vincent Yu

公开(公告)号：USD674058S1

公开(公告)日：2013-01-08

申请号：US29419788

申请日：2012-05-01

Applicant: Vincent Yu

Designer： Vincent Yu

公开(公告)号：US20090103068A1

公开(公告)日：2009-04-23

申请号：US11875471

申请日：2007-10-19

Applicant: Vincent Yu ,  Hsien-Cheng Wang ,  Hung-Chang Hsieh

Inventor： Vincent Yu ,  Hsien-Cheng Wang ,  Hung-Chang Hsieh

IPC: G03B27/34 ,  G06F19/00

CPC classification number: G03F7/70833 ,  G03F7/70258 ,  G03F7/70641 ,  G03F7/70858

Abstract: Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.

Abstract translation: 提供一种包括可变聚焦装置的曝光装置。 可变聚焦装置可以包括可能在存在电场的情况下变形的透明膜。 透明膜的变形可以允许改变辐射束的聚焦长度。 在一个实施例中，可调制可变聚焦装置，使得具有第一聚焦长度的辐射束用于曝光目标上的第一位置，并且为曝光目标上的第二位置提供具有第二焦距的辐射束 。 还提供了一种方法和计算机可读介质。

公开(公告)号：USD570988S1

公开(公告)日：2008-06-10

申请号：US29302572

申请日：2008-01-18

Applicant: David M. Cink ,  Vincent Yu ,  Kenneth C. Gehring

Designer： David M. Cink ,  Vincent Yu ,  Kenneth C. Gehring

公开(公告)号：US20070003879A1

公开(公告)日：2007-01-04

申请号：US11337986

申请日：2006-01-24

Applicant: Ching-Yu Chang ,  C.C. Ke ,  Vincent Yu

Inventor： Ching-Yu Chang ,  C.C. Ke ,  Vincent Yu

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/162 ,  G03F7/168 ,  G03F7/70341 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.

Abstract translation: 提供了在半导体晶片上进行浸渍光刻的方法。 该方法包括在半导体晶片的表面上提供一层抗蚀剂。 接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。 然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

公开(公告)号：US09179388B2

公开(公告)日：2015-11-03

申请号：US13979835

申请日：2011-01-25

Applicant: Vincent Yu ,  Field Liu

Inventor： Vincent Yu ,  Field Liu

IPC: H04W36/30 ,  H04W36/32

CPC classification number: H04W36/32

Abstract: The present invention discloses a method for handover of User Equipment (UE) a service connection being made via the UE, comprises: if fast cells are set up as base stations starts up, handover from a normal cell to a first fast cell with a radio bearer set up therein when the UE moving speed exceeds a threshold, set up a same radio bearer at a current fast cell as the radio bearer set up at the first fast cell when the UE is leaving the first fast cell for the current fast cell adjacent to the first fast cell, release the radio bearer at the first fast cell after the UE leaves the first fast cell, and re-registering into an adjacent normal cell when the service connection is terminated, or handover to the adjacent normal cell from the current fast cell when the measured moving speed of the UE is below the threshold.

Abstract translation: 本发明公开了一种用户设备（UE）通过UE进行业务连接切换的方法，包括：如果快速小区作为基站启动建立，则从正常小区切换到具有无线电的第一快速小区 当UE移动速度超过阈值时，在UE移动速度超过阈值时建立承载，在当前快速小区离开第一个快速小区时，在当前快速小区建立与第一个快速小区建立的无线承载相同的无线承载 到第一快速小区，在UE离开第一快速小区之后，在第一快速小区释放无线承载，并且当业务连接终止时重新登记到相邻的正常小区，或从当前的切换到相邻的正常小区 当UE的测量移动速度低于阈值时，快速小区。

公开(公告)号：USD712015S1

公开(公告)日：2014-08-26

申请号：US29413047

申请日：2012-02-10

Applicant: Vincent Yu

Designer： Vincent Yu

公开(公告)号：US20110193202A1

公开(公告)日：2011-08-11

申请号：US12701104

申请日：2010-02-05

Applicant: Vincent Yu ,  Shih-Che Wang ,  Chun-Kuang Chen

Inventor： Vincent Yu ,  Shih-Che Wang ,  Chun-Kuang Chen

IPC: H01L29/06 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/20 ,  G03F1/32 ,  G03F7/325

Abstract: Apparatus and methods are disclosed herein for fabricating semiconductor device features with a half-pitch node of 22 nm and beyond using single exposure and single etch (1P1E) photolithography techniques. The method includes exposing in a single exposure a photoresist layer to the exposure source through a photolithography mask where the photolithography mask has on it an island pattern of a material having high percentage transmission. The photoresist layer is developed using a negative tone developer to form a hole pattern in the photoresist layer. The 1P1E does not require the second photo exposure of the double patterning method. Furthermore, the method circumvents the island pattern collapsing issues and the need for strong illumination associated with exiting single 1P1E processes.

Abstract translation: 本文公开了用于制造半导体器件特征的装置和方法，其半节距节点为22nm，并且超过使用单次曝光和单蚀刻（1P1E）光刻技术。 该方法包括通过光刻掩膜将光致抗蚀剂层暴露于曝光源到曝光源，光刻掩模在其上具有透光率高的材料的岛状图案。 使用负色调显影剂显影光致抗蚀剂层以在光致抗蚀剂层中形成孔图案。 1P1E不需要双重图案化方法的第二次曝光。 此外，该方法避免了岛屿模式的崩溃问题以及与退出单个1P1E过程相关的强烈照明的需求。