公开(公告)号：US08481403B1

公开(公告)日：2013-07-09

申请号：US12984524

申请日：2011-01-04

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4757

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

公开(公告)号：US07524735B1

公开(公告)日：2009-04-28

申请号：US11447594

申请日：2006-06-05

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/762

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

摘要翻译： 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

公开(公告)号：US07888233B1

公开(公告)日：2011-02-15

申请号：US12411243

申请日：2009-03-25

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4757

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

摘要翻译： 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

公开(公告)号：US07582555B1

公开(公告)日：2009-09-01

申请号：US11323812

申请日：2005-12-29

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4763

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

摘要翻译： 本发明通过提供填充间隙的改进方法来满足这些需要。 在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述​​室中。 控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。 化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。 可流动膜填充基板上的间隙。 然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。 本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US08580697B1

公开(公告)日：2013-11-12

申请号：US13031077

申请日：2011-02-18

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/02

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

公开(公告)号：US07915139B1

公开(公告)日：2011-03-29

申请号：US12508461

申请日：2009-07-23

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/00

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

摘要翻译： 本发明通过提供填充间隙的改进方法来满足这些需要。 在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述​​室中。 控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。 化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。 可流动膜填充基板上的间隙。 然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。 本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US08171700B2

公开(公告)日：2012-05-08

申请号：US12717672

申请日：2010-03-04

申请人： Michael Barnes

发明人： Michael Barnes

IPC分类号： E04B1/00 ,  E04C2/54

CPC分类号： B21D47/00 ,  E06B1/16 ,  Y10T29/49629

摘要： A hollow metal door using hollow structural sections with closed cross section, along with the method for making same, is described herein.

摘要翻译： 本文描述了使用具有封闭横截面的中空结构部分的中空金属门及其制造方法。

公开(公告)号：US20110201134A1

公开(公告)日：2011-08-18

申请号：US13081005

申请日：2011-04-06

申请人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

公开(公告)号：US07979217B2

公开(公告)日：2011-07-12

申请号：US12368176

申请日：2009-02-09

申请人： Paul Gottlieb ,  Michael Barnes ,  Brian William Bourke

发明人： Paul Gottlieb ,  Michael Barnes ,  Brian William Bourke

IPC分类号： G01N31/00 ,  G01N23/00 ,  G06F19/00

CPC分类号： G01N23/2206 ,  G01N23/2252 ,  H01J2237/2561

摘要： A method of analyzing spectroscopic data, the method comprising collecting spatially resolved measurement spectroscopic data of a sample for a series of measurements spots, assigning the measurement spots into a predefined set of spectral categories, based on characteristics of the spectroscopic data of the respective measurement spots, identifying groupings of the measurement spots based on their respective spectral categories and their spatial relationships, and assigning each grouping of measurement spots to a fundamental sample unit data object.

摘要翻译： 一种分析光谱数据的方法，所述方法包括：基于各个测量点的光谱数据的特性，将用于一系列测量点的样本的空间分辨测量分光数据收集到预定义的光谱类别集合中; 基于它们各自的光谱类别及其空间关系识别测量点的分组，以及将每个测量点分组分配给基本采样单元数据对象。

公开(公告)号：US20070173359A1

公开(公告)日：2007-07-26

申请号：US11340395

申请日：2006-01-26

申请人： Richard Mowery ,  Michael Barnes ,  Dale Voice

发明人： Richard Mowery ,  Michael Barnes ,  Dale Voice

IPC分类号： A63B65/02

CPC分类号： F42B6/06

摘要： A vane for an archery arrow consisting of durable, stiff material, utilizing an overall vane length of approximately two inches or less, a maximum vane height of approximately 0.6 inches or less, a straight upper and rearward extending edge from the forward point of the vane to its maximum height, and a radial rear edge from the vane's maximum height to its rearward point. The invention provides arrow steering capabilities for which longer vanes or feathers were previously required, and further promotes accuracy by reducing weight at the nock end of the arrow.

摘要翻译： 一种用于射箭箭头的叶片，其由耐用的刚性材料组成，利用大约两英寸或更小的总叶片长度，大约0.6英寸或更小的最大叶片高度，从叶片的前点的直的上部和后部延伸边缘 到其最大高度，以及从叶片的最大高度到其后方的径向后边缘。 本发明提供了先前需要更长叶片或羽毛的箭头转向能力，并且通过减小箭头的末端处的重量来进一步提高精度。