公开(公告)号：US20180226768A1

公开(公告)日：2018-08-09

申请号：US15933732

申请日：2018-03-23

申请人： Vixar Inc.

发明人： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/343 ,  H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

公开(公告)号：US10014661B2

公开(公告)日：2018-07-03

申请号：US14804367

申请日：2015-07-21

申请人： Vixar Inc.

发明人： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/343 ,  H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

公开(公告)号：US20150380901A1

公开(公告)日：2015-12-31

申请号：US14804367

申请日：2015-07-21

申请人： Vixar Inc.

发明人： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/343

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

摘要翻译： 具有改进特性的VCSEL和方法。 在一些实施例中，这些包括半导体衬底; 衬底上的垂直腔表面发射激光器（VCSEL）; 在VCSEL上形成的第一电接触; 形成在所述基板上的第二电触点，其中所述VCSEL包括：具有第一和第二反射镜的第一谐振腔，其中至少一个部分透射入射在所述反射镜上的光，其中所述第一第二反射镜是导电的。 第一层位于第一反射镜和第二反射镜之间，并且具有限制电流流动路径的第一孔。 第二层位于第一层和第二层之间，也限制了电流路径。 多量子阱（MQW）结构在第一反射镜和第二反射镜之间，其中第一和第二孔一起作用以限定通过MQW结构的电流的路径几何形状。