公开(公告)号：US06500771B1

公开(公告)日：2002-12-31

申请号：US09494635

申请日：2000-01-31

申请人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Alan Cuthbertson

发明人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Alan Cuthbertson

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  C23C16/045 ,  C23C16/401 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31625

摘要： A method for fabricating a boron-contained silicate glass layers, such as borosilicate and borophosphosilicate glass films at low temperature using High Density Plasma CVD with silane derivatives as a source of silicon, boron and phosphorus compounds as a doping compounds, oxygen is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a flow capability of boron-contained silicate glass materials which provide a film with good film integrity and void-free gap-fill within the steps of device structures after low temperature thermal budget anneal conditions.

摘要翻译： 描述了使用硅烷衍生物作为硅源，硼和磷化合物作为掺杂化合物的氧的高密度等离子体CVD制备含硼硅酸盐玻璃层例如硼硅酸盐和硼磷硅酸盐玻璃膜的方法，例如硼硅酸盐和硼磷硅酸盐玻璃膜。 在反应器室中的整个沉积步骤中保持具有一定等离子体密度的RF等离子体。 本发明方法的主要特征是含硼硅酸盐玻璃材料的流动能力，其在低温热预热退火条件之后在器件结构的步骤中提供具有良好膜完整性和无空隙间隙填充的膜。

公开(公告)号：US06180490B2

公开(公告)日：2001-01-30

申请号：US09318670

申请日：1999-05-25

申请人： Vladislav Vassiliev ,  Igor Peidous

发明人： Vladislav Vassiliev ,  Igor Peidous

IPC分类号： H01L2176

CPC分类号： H01L21/76232

摘要： This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically to an improved method of filling shallow trenches, in shallow trench isolation, STI sub-quarter micron technology. The present method relates to a process for forming trench gap filling with chemically vapor deposited (CVD) silicon dioxide layers within trenches within substrates employed in integrated circuit fabrication. There is first provided a silicon substrate having a trench formed therein. There is then formed a silicon dioxide layer through tetraethylorthosilicate (TEOS) and ozone reaction, at either sub-atmospheric, or atmospheric pressure, with enhanced surface sensitivity features, which lines the trench providing corner rounding. Then there is a thermal oxidation to form within the trench a thermal silicon dioxide layer underneath the TEOS-ozone trench silicon dioxide liner. Finally, there is formed on top of the trench a silicon dioxide layer formed by either low pressure CVD using TEOS, or non-surface sensitive TEOS ozone CVD, or a high-density plasma CVD process. All layers are further annealed to form a void-free trench fill.

摘要翻译： 本发明涉及一种用于半导体集成电路器件的制造方法，更具体地说，涉及一种在浅沟槽隔离，STI二分之一微米技术中填充浅沟槽的改进方法。 本方法涉及一种用于在集成电路制造中使用的衬底内的沟槽内形成化学气相沉积（CVD）二氧化硅层的沟槽间隙填充的方法。首先提供在其中形成有沟槽的硅衬底。 然后在低于大气压或大气压下通过四乙基原硅酸盐（TEOS）和臭氧反应形成二氧化硅层，具有增强的表面灵敏度特征，其中沟槽提供拐角四舍五入。 然后，在沟槽内形成热氧化，在TEOS-臭氧沟槽二氧化硅衬垫下方形成热二氧化硅层。 最后，通过使用TEOS的低压CVD或非表面敏感的TEOS臭氧CVD或高密度等离子体CVD工艺在沟槽的顶部形成二氧化硅层。 所有层进一步退火以形成无空隙的沟槽填料。

公开(公告)号：US06355581B1

公开(公告)日：2002-03-12

申请号：US09511276

申请日：2000-02-23

申请人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu

发明人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu

IPC分类号： H01L21316

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629

摘要： A method for fabricating a silicon oxide and silicon glass layers at low temperature using High Density Plasma CVD with silane or inorganic or organic silane derivatives as a source of silicon, inorganic compounds containing boron, phosphorus, and fluorine as a doping compounds, oxygen, and gas additives is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a silicon source to gas additive mole ratio, which is maintained depending on the used compound and deposition process conditions. Inorganic halide-containing compounds are used as gas additives. This feature provides the reaction conditions for the proper reaction performance that allows a deposition of a film with. good film integrity and void-free gap-fill within the steps of device structures.

摘要翻译： 一种使用硅烷或无机或有机硅烷衍生物作为硅源的高密度等离子体CVD制备低温氧化硅和硅玻璃层的方法，含有硼，磷和氟的无机化合物作为掺杂化合物，氧和 描述了气体添加剂。 在反应器室中的整个沉积步骤中保持具有一定等离子体密度的RF等离子体。 本发明方法的主要特征是硅源与气体添加剂的摩尔比，其依赖于使用的化合物和沉积工艺条件而保持。 使用无机卤化物作为气体添加剂。 该特征提供了允许膜沉积的适当反应性能的反应条件。 良好的薄膜完整性和在设备结构的步骤内无空隙间隙填充。

公开(公告)号：US06197705B1

公开(公告)日：2001-03-06

申请号：US09270598

申请日：1999-03-18

申请人： Vladislav Vassiliev

发明人： Vladislav Vassiliev

IPC分类号： B05D306

CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612

摘要： A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O3/O2 PACVD) is described. It combines advantages of both low temperature Plasma-Enhanced Chemical Vapor Deposition (PECVD) and TEOS-ozone Sub-Atmospheric Chemical Vapor Deposition (SACVD) and yields a coating of silicon oxide with stable and high deposition rate, no surface sensitivity, good film properties, conformal step coverage and good gap-fill. Key features of the invention's O3/O2 PACVD process are: a plasma is maintain throughout the entire deposition step in a parallel plate type reactor chamber, the precise RF plasma density, ozone concentration in oxygen and the deposition temperature. These features provide the reaction conditions for the proper O3/O2 reaction mechanism that deposits a conformal silicon oxide layer. The process has significant implication for semiconductor device manufacturing involving the deposition of a dielectric over a conducting non-planar surface.

摘要翻译： 描述了使用具有TEOS-臭氧 - 氧反应气体混合物（TEOS O 3 / O 2 PACVD）的软功率优化等离子体 - 活化CVD制造低温下的氧化硅和硅玻璃层的方法。 它结合了低温等离子体增强化学气相沉积（PECVD）和TEOS-臭氧亚大气化学气相沉积（SACVD）的优点，并产生了具有稳定和高沉积速率，无表面灵敏度，良好膜性能的氧化硅涂层 ，适形步骤覆盖和良好的填缝。 本发明的O3 / O2 PACVD工艺的主要特征是：在平行板式反应室中的整个沉积步骤中保持等离子体，精确的RF等离子体密度，氧中的臭氧浓度和沉积温度。 这些特征为适当的O3 / O2反应机理提供了沉积共形氧化硅层的反应条件。 该方法对于涉及在导电非平面表面上沉积电介质的半导体器件制造具有重要意义。