公开(公告)号：US06634370B2

公开(公告)日：2003-10-21

申请号：US09849276

申请日：2001-05-07

申请人： Satoshi Nakashima ,  Wataru Okase ,  Takenobu Matsuo ,  Tameyasu Hyakuzuka ,  Yasushi Yagi ,  Yoshiyuki Harima ,  Jun Yamauchi ,  Hiroki Taniyama ,  Kyungho Park ,  Yoshitsugu Tanaka ,  Yoshinori Kato ,  Hiroshi Sato

发明人： Satoshi Nakashima ,  Wataru Okase ,  Takenobu Matsuo ,  Tameyasu Hyakuzuka ,  Yasushi Yagi ,  Yoshiyuki Harima ,  Jun Yamauchi ,  Hiroki Taniyama ,  Kyungho Park ,  Yoshitsugu Tanaka ,  Yoshinori Kato ,  Hiroshi Sato

IPC分类号： B08B300

CPC分类号： H01L21/67167 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67178 ,  H01L21/6723 ,  H01L21/68707

摘要： Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

摘要翻译： 液体处理单元设置在主臂35周围的多层中。在液体处理单元中，电镀单元M1至M4设置在下层侧，以及用于后处理处理的单元，例如清洁单元70，其中 更清洁的气氛被设置在上层侧。 由此，可以同时获得面积效率的提高，清洁气氛的形成和维护。

公开(公告)号：US5662469A

公开(公告)日：1997-09-02

申请号：US410538

申请日：1995-03-24

申请人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

发明人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  F27D5/00 ,  F27D3/12

CPC分类号： C23C16/463 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/481 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67109

摘要： The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position. The invention is further characterized in that, if the actual processing temperature at the prescribed position changes while the workpiece is undergoing thermal processing, the workpiece is moved such that the position of the workpiece with respect to the heat generation source is changed in order to return the processing temperature at the prescribed position, to the prescribed processing temperature. This ensures that the temperature of the workpiece can be rapidly raised to the prescribed processing temperature and also that, if the temperature of the workpiece should change, it can be rapidly returned to the prescribed processing temperature.

摘要翻译： 本发明涉及一种热处理方法，其中在一端具有入口/出口的圆柱形处理管在其另一端设置有热源，并且对从已经从 处理管的入口/出口到其中的规定位置。 该热处理方法及其装置的特征在于，当工件移动到规定位置时，首先将其移动到比规定位置更靠近热源的接近位置，然后从其返回到 规定的位置。 本发明的特征还在于，如果在工件进行热加工时在规定位置处的实际加工温度变化，则工件被移动，使得工件相对于发热源的位置改变以返回 处理温度在规定的位置，达到规定的加工温度。 这样可以确保工件的温度快速提高到规定的加工温度，而且如果工件的温度变化，则可以迅速地恢复到规定的加工温度。

公开(公告)号：US06473993B1

公开(公告)日：2002-11-05

申请号：US09537768

申请日：2000-03-30

申请人： Yasushi Yagi ,  Takeshi Sakuma ,  Wataru Okase ,  Masayuki Kitamura ,  Hironori Yagi ,  Eisuke Morisaki

发明人： Yasushi Yagi ,  Takeshi Sakuma ,  Wataru Okase ,  Masayuki Kitamura ,  Hironori Yagi ,  Eisuke Morisaki

IPC分类号： F26B304

CPC分类号： H01L21/67109

摘要： A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.

摘要翻译： 将半导体晶片安装在设置在处理室中的基座上，将晶片在约1000℃的温度下加热退火，并且从与晶片相对设置的气体供给装置供给气体。 当提高晶片的温度和/或当降低晶片的温度时，将表面内温度差限制在较小的值以抑制滑移的发生。 气体供给装置分别对应于晶片的中心部分和周边部分，以将不同流量的气体分别供应到中心部分和周边部分。 当提高晶片的温度时，例如以比晶片的温度更高（低于）的温度的气体以比将气体供应到周边部分的流量更大（下） 到中部。 当降低晶片的温度时，例如以比晶片的温度更高（更低）的温度的气体以比供应气体的周边部分低的（高）的单位面积的流量被供给 到中部。

公开(公告)号：US5429498A

公开(公告)日：1995-07-04

申请号：US987024

申请日：1992-12-07

申请人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

发明人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  H01L21/677 ,  F27D3/12

CPC分类号： H01L21/67109 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/463 ,  C23C16/481 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/67745 ,  H01L21/67751

摘要： The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position. The invention is further characterized in that, if the actual processing temperature at the prescribed position changes while the workpiece is undergoing thermal processing, the workpiece is moved such that the position of the workpiece with respect to the heat generation source is changed in order to return the processing temperature at the prescribed position to the prescribed processing temperature. This ensures that the temperature of the workpiece can be rapidly raised to the prescribed processing temperature and also that, if the temperature of the workpiece should change, it can be rapidly returned to the prescribed processing temperature.

摘要翻译： 本发明涉及一种热处理方法，其中在一端具有入口/出口的圆柱形处理管在其另一端设置有热源，并且对从已经从 处理管的入口/出口到其中的规定位置。 这种热处理方法及其装置的特征在于，当工件移动到规定位置时，首先将其移动到比规定位置更靠近热源的接近位置，然后从其返回到 规定的位置。 本发明的特征还在于，如果在工件进行热加工时在规定位置处的实际加工温度变化，则工件被移动，使得工件相对于发热源的位置改变以返回 在规定位置处理温度达规定处理温度。 这样可以确保工件的温度快速提高到规定的加工温度，而且如果工件的温度变化，则可以迅速地恢复到规定的加工温度。

公开(公告)号：US06497767B1

公开(公告)日：2002-12-24

申请号：US09570571

申请日：2000-05-12

申请人： Wataru Okase ,  Yasushi Yagi

发明人： Wataru Okase ,  Yasushi Yagi

IPC分类号： C23C1600

CPC分类号： H01L21/68735 ,  C23C16/4585 ,  C23C16/46 ,  C30B25/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/68742

摘要： A thermal processing unit for a single substrate of the invention includes a processing chamber vessel whose inside can be made a predetermined atmosphere of a process gas, and an elevating shaft which can be moved up and down in the processing chamber vessel. A supporting body which can support a substrate is arranged on an upper end of the elevating shaft. The substrate supported by the supporting body is adapted to be heated by a heater. The supporting body has a circular supporting part which can support a substantially full surface of a peripheral area of the substrate, and a pushing-up member which can push up the substrate from on the supporting part for conveying the substrate. According to the invention, concentration of stress onto the substrate can be restrained, and a thermal process can be conducted uniformly within a surface of the substrate because heating from a peripheral area of the substrate may be restrained. In addition, the substrate can be easily conveyed although the substantially full surface of the peripheral area of the substrate is supported.

摘要翻译： 用于本发明的单个基板的热处理单元包括处理室容器，其内部可以被制成处理气体的预定气氛，以及可在处理室容器中上下移动的升降轴。 可以支撑基板的支撑体布置在升降轴的上端。 由支撑体支撑的基板适于被加热器加热。 支撑体具有能够支撑基板的周边区域的基本上整个表面的圆形支撑部，以及可以从用于输送基板的支撑部上推动基板的上推构件。 根据本发明，可以抑制对基板的应力集中，并且可以抑制从基板的周边区域的加热来在基板的表面内均匀地进行热处理。 此外，尽管基板的周边区域的基本上完整的表面被支撑，但是可以容易地传送基板。

公开(公告)号：US5651670A

公开(公告)日：1997-07-29

申请号：US341047

申请日：1994-11-16

申请人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

发明人： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  H01L21/677 ,  F27D5/00

CPC分类号： H01L21/67109 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/463 ,  C23C16/481 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/67745 ,  H01L21/67751

摘要： The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position. The invention is further characterized in that, if the actual processing temperature at the prescribed position changes while the workpiece is undergoing thermal processing, the workpiece is moved such that the position of the workpiece with respect to the heat generation source is changed in order to return the processing temperature at the prescribed position to the prescribed processing temperature. This ensures that the temperature of the workpiece can be rapidly raised to the prescribed processing temperature and also that, if the temperature of the workpiece should change, it can be rapidly returned to the prescribed processing temperature.

摘要翻译： 本发明涉及一种热处理方法，其中在一端具有入口/出口的圆柱形处理管在其另一端设置有热源，并且对从已经从 处理管的入口/出口到其中的规定位置。 这种热处理方法及其装置的特征在于，当工件移动到规定位置时，首先将其移动到比规定位置更靠近热源的接近位置，然后从其返回到 规定的位置。 本发明的特征还在于，如果在工件进行热加工时在规定位置处的实际加工温度改变，则工件被移动，使得工件相对于发热源的位置改变以返回 在规定位置处理温度达规定处理温度。 这样可以确保工件的温度快速提高到规定的加工温度，而且如果工件的温度变化，则可以迅速地恢复到规定的加工温度。

公开(公告)号：US08210022B2

公开(公告)日：2012-07-03

申请号：US12332897

申请日：2008-12-11

申请人： Shuji Moriya ,  Wataru Okase ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Michio Yamaji ,  Yasutaka Hayashi ,  Toshihide Yoshida ,  Yasuyuki Omata

发明人： Shuji Moriya ,  Wataru Okase ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Michio Yamaji ,  Yasutaka Hayashi ,  Toshihide Yoshida ,  Yasuyuki Omata

IPC分类号： G01F25/00 ,  G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/2708 ,  Y10T137/776 ,  Y10T137/7761 ,  Y10T137/7793

摘要： A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.

摘要翻译： 压力式流量控制参考允许以低成本执行流量控制器对所有类型气体（包括腐蚀性气体）的流量校准，并且还具有优异的流量控制精度。 压力型流量控制基准包括用于调节来自校准气体供给源的校准气体的压力的压力控制器，设置在压力控制器的下游侧的第一容积，未校准的流量控制器的第一连接口， 在第一容积的下游侧具有与未校准流量控制器的下游侧的第二连接口连接的基准压力型流量控制器，设置在基准压力型流量控制器的下游侧的第二容积， 以及设置在第二容积的下游侧的抽空装置。

公开(公告)号：US06641709B2

公开(公告)日：2003-11-04

申请号：US10290293

申请日：2002-11-08

申请人： Wataru Okase ,  Koichiro Kimura ,  Takenobu Matsuo

发明人： Wataru Okase ,  Koichiro Kimura ,  Takenobu Matsuo

IPC分类号： C25D1700

CPC分类号： C25D21/04 ,  C25D17/001

摘要： A mist trap mechanism and method for a plating apparatus, which can provide an improved mist removing effect by a simple structure, are provided. A gas discharge passage is formed to connect the space in a plating chamber and space outside of the plating chamber and provided with a liquid spouting portion and a solid wall. The discharge gas collides with the liquid spouted from the liquid spouting portion, and the discharge gas collides with the solid wall which has its surface wetted with the liquid spouted from the liquid spouting portion. Such a two-staged collision of the discharge gas effectively takes the mist contained in the discharge gas into the liquid. A liquid recovery portion is disposed in connection with the gas discharge passage to collectively catch the mist in a state captured by the liquid.

摘要翻译： 提供一种能够通过简单的结构提供改善的除雾效果的电镀装置的雾滴捕获机构和方法。 形成气体排出通道，以连接电镀室中的空间和电镀室外的空间，并设置有液体喷射部分和固体壁。 排出气体与从液体喷出部喷出的液体相撞，排出气体与表面被从液体喷出部喷出的液体润湿的固体壁碰撞。 这种放电气体的两阶段碰撞有效地将放出气体中所含的雾气引入液体。 液体回收部分与气体排出通道相连配置，以在由液体俘获的状态下集中地吸收雾气。

公开(公告)号：US20100096031A1

公开(公告)日：2010-04-22

申请号：US12451649

申请日：2008-05-26

申请人： Wataru Okase ,  Shuji Moriya ,  Tomohiro Nakata ,  Tsutomu Shinohara ,  Michio Yamaji

发明人： Wataru Okase ,  Shuji Moriya ,  Tomohiro Nakata ,  Tsutomu Shinohara ,  Michio Yamaji

IPC分类号： G05D7/00 ,  F16K27/00 ,  F17D1/04

CPC分类号： F16K27/003 ,  Y10T137/598 ,  Y10T137/87885 ,  Y10T137/87917

摘要： There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency.A pressure indication device 4 to be replaced with a relatively-higher frequency is coupled to a base block 5 existing thereunder through male screw members 17 from above. An on-off valve 6 to be replaced with a relatively-lower frequency has, at its lower portion, a block-shaped main body 6a formed integrally therewith. The main body 6a of the on-off valve 6 is coupled to the base block 5 through male screw members 18 in the forward and rearward directions.

摘要翻译： 提供了一种流体控制装置，其可以减少构件的数量并且可以提高组装操作效率。 用相对较高频率代替的压力指示装置4通过外螺纹构件17从上方联接到存在于其下的基座5。 以相对较低频率代替的开关阀6在其下部具有与其一体形成的块状主体6a。 开关阀6的主体6a通过阳螺纹构件18沿前后方向联接到基座5。

公开(公告)号：US06740164B2

公开(公告)日：2004-05-25

申请号：US10058290

申请日：2002-01-30

申请人： Wataru Okase ,  Takenobu Matsuo

发明人： Wataru Okase ,  Takenobu Matsuo

IPC分类号： H01L2144

CPC分类号： H01L21/2885 ,  C25D7/12 ,  C25D17/001

摘要： Plating apparatus and plating method that can plate more uniformly on a processing surface of a workpiece are provided. The plating apparatus is comprised of a plating solution bathe which is provided with a first electrode held in a state soaked in a plating solution; a workpiece holding mechanism which holds a workpiece to contact its processing surface to the plating solution; and a contact member, disposed in the workpiece holding mechanism, that electrically contacts with the circumferential edge of the workpiece so to form a conductive layer on the workpiece surface as a second electrode. The contact member is divided along the circumferential direction of the workpiece with which they are electrically contacted. Thus, even if the contact resistance between each section of the contact member with the workpiece is variable, it is possible to adjust the plating electric current for each section of the contact member.

摘要翻译： 提供了可以在工件的加工表面上更均匀地平板化的电镀装置和电镀方法。 电镀装置由电镀液沐浴组成，电镀液包含浸渍在电镀液中的状态的第一电极; 工件保持机构，其保持工件以将其处理表面接触到电镀液; 以及设置在所述工件保持机构中的与所述工件的周向边缘电接触以在所述工件表面上形成作为第二电极的导电层的接触构件。 接触构件沿着与它们电接触的工件的圆周方向分开。 因此，即使接触构件与工件的每个部分之间的接触电阻是可变的，也可以调节接触构件的每个部分的电镀电流。