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    SEMICONDUCTOR ELEMENT
    1.
    发明申请
    SEMICONDUCTOR ELEMENT 失效
    半导体元件

    公开(公告)号：US20120187452A1

    公开(公告)日：2012-07-26

    申请号：US13239229

    申请日：2011-09-21

    申请人： Wataru Saito ,  Hidetoshi Fujimoto

    发明人： Wataru Saito ,  Hidetoshi Fujimoto

    IPC分类号： H01L29/78 ,  H01L29/205

    CPC分类号： H01L29/42316 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7781

    摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.

    摘要翻译： 根据一个实施例，半导体元件包括第一半导体层。 第一半导体层包含AlXGa1-XN。 第一半导体层的顶层由氮端接。 半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。 半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。 半导体元件包括连接到第三半导体层的第一主电极。 半导体元件包括连接到第三半导体层的第二主电极。 半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

    NITRIDE SEMICONDUCTOR DEVICE
    2.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 失效
    氮化物半导体器件

    公开(公告)号：US20110272708A1

    公开(公告)日：2011-11-10

    申请号：US13052881

    申请日：2011-03-21

    申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    IPC分类号： H01L29/205 ,  H01L29/22

    CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

    摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

    Nitride semiconductor device and method for manufacturing same
    5.
    发明授权
    Nitride semiconductor device and method for manufacturing same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US08759878B2

    公开(公告)日：2014-06-24

    申请号：US13238684

    申请日：2011-09-21

    申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

    Nitride semiconductor element with N-face semiconductor crystal layer
    6.
    发明授权
    Nitride semiconductor element with N-face semiconductor crystal layer 失效
    具有N面半导体晶体层的氮化物半导体元件

    公开(公告)号：US08519439B2

    公开(公告)日：2013-08-27

    申请号：US13239229

    申请日：2011-09-21

    申请人： Wataru Saito ,  Hidetoshi Fujimoto

    发明人： Wataru Saito ,  Hidetoshi Fujimoto

    IPC分类号： H01L29/66

    CPC分类号： H01L29/42316 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7781

    摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.

    摘要翻译： 根据一个实施例，半导体元件包括第一半导体层。 第一半导体层包含AlXGa1-XN。 第一半导体层的顶层由氮端接。 半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。 半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。 半导体元件包括连接到第三半导体层的第一主电极。 半导体元件包括连接到第三半导体层的第二主电极。 半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

    Nitride semiconductor device
    9.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US08664696B2

    公开(公告)日：2014-03-04

    申请号：US13052881

    申请日：2011-03-21

    申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778

    CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

    摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US08581301B2

    公开(公告)日：2013-11-12

    申请号：US13599951

    申请日：2012-08-30

    申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno ,  Toshiyuki Naka

    发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno ,  Toshiyuki Naka

    IPC分类号： H01L29/10

    CPC分类号： H01L27/0727 ,  H01L21/8252 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H02M3/155 ,  H02M3/33569 ,  H02M2001/007 ,  H01L2924/00

    摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.

    摘要翻译： 根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非​​掺杂氮化物半导体形成，第二氮化物半导体层 设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和 栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。 框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。