公开(公告)号：US07358156B2

公开(公告)日：2008-04-15

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US20070093041A1

公开(公告)日：2007-04-26

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US07968430B2

公开(公告)日：2011-06-28

申请号：US11850377

申请日：2007-09-05

申请人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

发明人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/3043 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

摘要翻译： 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。 第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。 第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。

公开(公告)号：US20080181275A1

公开(公告)日：2008-07-31

申请号：US11545756

申请日：2006-10-11

申请人： Takayuki Matsuyama ,  Masaaki Onomura

发明人： Takayuki Matsuyama ,  Masaaki Onomura

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0422 ,  H01S5/34333 ,  H01S2301/18

摘要： According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.

摘要翻译： 根据实施例的一个方面，提供了一种半导体发光器件，包括：氮化镓衬底; 设置在氮化镓衬底上的氮化物半导体的多层膜; 包括第一氮化硅层的第一膜; 以及包括第二氮化硅层和设置在第二氮化硅层上的层叠膜的第二膜。 氮化镓衬底和多层膜具有激光发射面和激光反射面。 第一氮化硅层设置在激光发射面上。 多层膜包括发光层，多层膜具有激光发射面和激光反射面。 第二氮化硅层设置在激光反射面上，层叠膜包括交替层叠的氧化物层和氮化硅层。

公开(公告)号：US07602829B2

公开(公告)日：2009-10-13

申请号：US11545756

申请日：2006-10-11

申请人： Takayuki Matsuyama ,  Masaaki Onomura

发明人： Takayuki Matsuyama ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0422 ,  H01S5/34333 ,  H01S2301/18

摘要： According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.

摘要翻译： 根据实施例的一个方面，提供了一种半导体发光器件，包括：氮化镓衬底; 设置在氮化镓衬底上的氮化物半导体的多层膜; 包括第一氮化硅层的第一膜; 以及包括第二氮化硅层和设置在第二氮化硅层上的层叠膜的第二膜。 氮化镓衬底和多层膜具有激光发射面和激光反射面。 第一氮化硅层设置在激光发射面上。 多层膜包括发光层，多层膜具有激光发射面和激光反射面。 第二氮化硅层设置在激光反射面上，层叠膜包括交替层叠的氧化物层和氮化硅层。

公开(公告)号：US07852893B2

公开(公告)日：2010-12-14

申请号：US12035959

申请日：2008-02-22

申请人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  G11B7/127 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/32341

摘要： A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface.

摘要翻译： 半导体激光器件包括：第一导电类型的衬底; 设置在所述基板上并且至少包括有源层和包层的氮化物半导体层叠体，所述包层为第二导电型并具有脊形波导; 设置在由所述层叠体构成的光谐振器的一个端面的第一膜，所述第一膜的反射率为40％以上且60％以下; 以及设置在所述光谐振器的另一端面上并且具有比所述第一膜高的反射率的第二膜。 光谐振器的长度为400μm以下。 一端面用作发光面。

公开(公告)号：US20080205467A1

公开(公告)日：2008-08-28

申请号：US12035959

申请日：2008-02-22

申请人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  G11B7/127 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/32341

摘要： A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface.

摘要翻译： 半导体激光器件包括：第一导电类型的衬底; 设置在所述基板上并且至少包括有源层和包层的氮化物半导体层叠体，所述包层为第二导电型并具有脊形波导; 设置在由所述层叠体构成的光谐振器的一个端面的第一膜，所述第一膜的反射率为40％以上且60％以下; 以及设置在所述光谐振器的另一端面上并且具有比所述第一膜高的反射率的第二膜。 光谐振器的长度为400μm以下。 一端面用作发光面。

公开(公告)号：US06724068B2

公开(公告)日：2004-04-20

申请号：US10104634

申请日：2002-03-21

申请人： Takayuki Matsuyama

发明人： Takayuki Matsuyama

IPC分类号： H01L2906

CPC分类号： H01S5/227 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S5/2277

摘要： An optical semiconductor device having a low threshold current and easiness of a single transverse mode oscillation is provided. The optical semiconductor device has a low device parasitic capacitance that allows a direct modulation at high speed. The optical semiconductor device comprises a first conduction type substrate, a stripe shaped active layer formed on the first conduction type substrate, a mesa shaped burying layer formed around the active layer and having a larger band gap than that of the active layer, and a groove that electrically isolates the burying layer, wherein the section of the burying layer is in an inverse trapezoid shape of which the upper base side is longer than the lower base side.

摘要翻译： 提供了具有低阈值电流和单一横向振荡的容易性的光学半导体器件。 光学半导体器件具有低器件寄生电容，允许高速直接调制。光学半导体器件包括第一导电型衬底，形成在第一导电型衬底上的条状有源层，围绕形成的台面状埋层 所述有源层具有比所述有源层大的带隙，以及使所述掩埋层电隔离的沟槽，其中所述掩埋层的所述截面呈反梯形形状，所述上基极侧的长度大于所述下层 基地。

公开(公告)号：US5852624A

公开(公告)日：1998-12-22

申请号：US632116

申请日：1996-04-15

申请人： Takayuki Matsuyama ,  Chisato Furukawa

发明人： Takayuki Matsuyama ,  Chisato Furukawa

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S3/19 ,  H01L21/20

CPC分类号： H01S5/0201 ,  H01S5/0202

摘要： In the semiconductor laser element of the present invention, a striped active layer for injecting an electrical current, is formed on the main surface of the semiconductor substrate. A pair of notches for dividing the semiconductor substrate, are made in the main surface of the semiconductor substrate so as to be in parallel with each other interposing the striped active layer. Each of the pair of notches has the ratio between the depth d thereof and a double of the width w, that is 2w, (d/2w), of 1.0 or higher.

摘要翻译： 在本发明的半导体激光元件中，在半导体基板的主面上形成有用于注入电流的带状有源层。 用于分割半导体衬底的一对凹口在半导体衬底的主表面中形成为彼此平行，插入条纹有源层。 一对凹口中的每一个具有其深度d和宽度w的双倍之间的比率，即2w，（d / 2w），为1.0或更高。

公开(公告)号：US06602432B2

公开(公告)日：2003-08-05

申请号：US09996656

申请日：2001-11-28

申请人： Takayuki Matsuyama

发明人： Takayuki Matsuyama

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  G02B2006/12142 ,  G02F1/01708 ,  G02F2001/0157

摘要： A high-speed operation of an electroabsorption modulator is intended. A p-InGaAs contact layer 9 is formed not only in an optical modulation region MA but also in an optical coupling region CA, and an AlInAs oxide layer 7 is disposed in p-InP cladding layers 5 and 8 in a mesa MS portion of the optical coupling region CA.

摘要翻译： 预期电吸收调制器的高速运行。 p-InGaAs接触层9不仅形成在光学调制区域MA中，而且在光耦合区域CA中形成，并且AlInAs氧化物层7设置在p-InP包层5和8中的台面MS部分中 光耦合区域CA。