公开(公告)号：US08410498B2

公开(公告)日：2013-04-02

申请号：US12779246

申请日：2010-05-13

申请人： Wataru Tamura ,  Chiharu Sasaki

发明人： Wataru Tamura ,  Chiharu Sasaki

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/30

摘要： A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.

摘要翻译： 半导体发光器件包括第一覆层，第二覆层和形成在第一和第二覆层之间的有源层。 扩散控制层依次包括设置在第二覆层上的中间层和第一透明导电层。 半导体发光器件还包括具有浓度低于扩散控制层的杂质浓度的杂质的第二透明导电层和具有浓度高于第二透明体的杂质浓度的杂质的第三透明导电层 导电层。 中间层和第一透明导电层之间的边界是晶格失配界面。

公开(公告)号：US08610151B2

公开(公告)日：2013-12-17

申请号：US13415206

申请日：2012-03-08

申请人： Chiharu Sasaki ,  Wataru Tamura ,  Keita Akiyama

发明人： Chiharu Sasaki ,  Wataru Tamura ,  Keita Akiyama

IPC分类号： H01L33/60

CPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/38

摘要： There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; a second n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 μm; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

摘要翻译： 提供了具有半导体膜的发光元件，该半导体膜包括具有GaInP或GaP的p型电流扩展层; AlInP的第一个p-clad; AlGaInP的第二p包层; 包括GaInP或AlGaInP的有源层; 载体密度为1×1018cm-3至5×1018cm-3的第一n型包层; 具有载流子密度为1×1018cm-3至5×1018cm-3的第二n型包层; 其中，第一p型覆层在整个p型覆层中的厚度比例为50％〜80％。 整个n包层的厚度等于或大于2μm; 整个n包层中的第一n包层的厚度比例等于或大于80％; 并且第二n包层的厚度等于或大于100nm。

公开(公告)号：US08367449B2

公开(公告)日：2013-02-05

申请号：US13026564

申请日：2011-02-14

申请人： Chiharu Sasaki ,  Wataru Tamura ,  Keita Akiyama

发明人： Chiharu Sasaki ,  Wataru Tamura ,  Keita Akiyama

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/0066

摘要： A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0

摘要翻译： 具有高发光效率和高击穿电压的半导体发光装置以及批次之间降低的击穿电压变化。 半导体发光装置包括第一覆盖层和第二覆盖层。 第二覆盖层的平均掺杂剂浓度低于第一覆盖层的平均掺杂剂浓度。 发光装置还包括平均掺杂剂浓度为2×1016至4×1016cm-3的有源层。 有源层由（AlyGa1-y）xIn1-xP（0

公开(公告)号：US08319253B2

公开(公告)日：2012-11-27

申请号：US13009045

申请日：2011-01-19

申请人： Wataru Tamura ,  Chiharu Sasaki

发明人： Wataru Tamura ,  Chiharu Sasaki

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/30

摘要： The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.

摘要翻译： 所述器件包括由AlGaInP构成的有源层，以及n型覆盖层和p型覆盖层，所述p型覆盖层设置成夹持有源层，n型覆盖层和p型覆盖层各自具有带隙 大于活性层的带隙。 n型覆盖层包括由AlGaInP构成的第一n型覆盖层和由AlInP构成的第二n型覆盖层; 第二n型覆盖层的厚度为40nm〜200nm。

公开(公告)号：US20110175057A1

公开(公告)日：2011-07-21

申请号：US13009045

申请日：2011-01-19

申请人： Wataru TAMURA ,  Chiharu Sasaki

发明人： Wataru TAMURA ,  Chiharu Sasaki

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/30

摘要： The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.

摘要翻译： 所述器件包括由AlGaInP构成的有源层，以及n型覆盖层和p型覆盖层，所述p型覆盖层设置成夹持有源层，n型覆盖层和p型覆盖层各自具有带隙 大于活性层的带隙。 n型覆盖层包括由AlGaInP构成的第一n型覆盖层和由AlInP构成的第二n型覆盖层; 第二n型覆盖层的厚度为40nm〜200nm。

公开(公告)号：USD287834S

公开(公告)日：1987-01-20

申请号：US583253

申请日：1984-02-24

申请人： Kentaro Ito ,  Chiharu Sasaki

设计人： Kentaro Ito ,  Chiharu Sasaki

公开(公告)号：US5854811A

公开(公告)日：1998-12-29

申请号：US552377

申请日：1995-11-03

申请人： Chiharu Sasaki

发明人： Chiharu Sasaki

IPC分类号： H03F1/32 ,  H04B1/12 ,  H04K1/02

CPC分类号： H04B1/123

摘要： A distortion compensating circuit comprises a frequency control section, a filtering section and an eliminating section. Major frequencies are detected from an input signal including major signals having the major frequencies by a major frequency detector performing spectrum analysis of the input signal. Receiving the major frequencies, the frequency control section calculates distortion frequencies from the major frequencies based on predetermined formulae representing the nonlinear distortion. The predetermined formulae are stored in advance. The frequency control section generates frequency control signals indicating the distortion frequencies. After the input signal is divided into a first signal and a second signal, the filtering section extracts frequency components having the distortion frequencies from the first signal in response to the frequency control signals. The frequency components are eliminated from the second signal by combining the phase-reversed frequency component with the second signal by the eliminating section.

摘要翻译： 失真补偿电路包括频率控制部，滤波部和消除部。 从包括主频率的主要信号的输入信号中，通过主频率检测器执行输入信号的频谱分析来检测主频率。 接收主频率，频率控制部分基于表示非线性失真的规定公式计算主频的失真频率。 预先存储预定公式。 频率控制部分产生指示失真频率的频率控制信号。 在输入信号被分成第一信号和第二信号之后，滤波部分响应于频率控制信号从第一信号中提取具有失真频率的频率分量。 通过将消除部分的相位反转频率分量与第二信号组合，从第二信号中消除频率分量。

公开(公告)号：USD311507S

公开(公告)日：1990-10-23

申请号：US169193

申请日：1988-03-16

申请人： Chiharu Sasaki ,  Kazuya Kurita ,  Tomonori Mogi

设计人： Chiharu Sasaki ,  Kazuya Kurita ,  Tomonori Mogi