公开(公告)号：US20130264685A1

公开(公告)日：2013-10-10

申请号：US13993810

申请日：2012-01-06

申请人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Shu Sugisawa

发明人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Shu Sugisawa

IPC分类号： C30B33/02 ,  H01L29/32

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L29/32

摘要： The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

摘要翻译： 本发明提供了一种制造硅单晶晶片的方法，其中对于氧浓度小于7ppma，氮浓度为1×1013至1×1014原子/厘米2的硅单晶晶片进行热处理， cm3，其是通过Czochralski法生长的V型硅单晶锭，在非氮化气氛中在1150〜1300℃下反应1〜120分钟。 结果，制造低成本硅单晶晶片的方法可以通过使用通过CZ方法制造的V区晶片适用于IGBT，该V型晶片可以通过制造大量具有直径增加的方式 没有缺陷并且通过提供径向电阻率分布，其基本上等于实施中子辐射时的径向电阻率分布，而不执行中子照射。

公开(公告)号：US08916953B2

公开(公告)日：2014-12-23

申请号：US13993810

申请日：2012-01-06

申请人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Shu Sugisawa

发明人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Shu Sugisawa

IPC分类号： H01L29/32 ,  C30B33/02 ,  C30B29/06

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L29/32

摘要： The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

摘要翻译： 本发明提供了一种制造硅单晶晶片的方法，其中对于氧浓度小于7ppma，氮浓度为1×1013至1×1014原子/厘米2的硅单晶晶片进行热处理， cm3，其是通过Czochralski法生长的V型硅单晶锭，在非氮化气氛中在1150〜1300℃下反应1〜120分钟。 结果，制造低成本硅单晶晶片的方法可以通过使用通过CZ方法制造的V区晶片适用于IGBT，该V型晶片可以通过制造大量具有直径增加的方式 没有缺陷并且通过提供径向电阻率分布，其基本上等于实施中子辐射时的径向电阻率分布，而不执行中子照射。

公开(公告)号：US20130341763A1

公开(公告)日：2013-12-26

申请号：US13978840

申请日：2012-01-06

申请人： Yuuki Ooi ,  Wei Feng Qu ,  Tsuyoshi Ohtsuki ,  Kyoko Mitani ,  Fumio Tahara

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/83 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

摘要翻译： 本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层 的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。 结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。

公开(公告)号：US09606030B2

公开(公告)日：2017-03-28

申请号：US14124827

申请日：2012-06-18

申请人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi

发明人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi

IPC分类号： G01N25/72 ,  G01N1/28 ,  H01L21/66

CPC分类号： G01N1/28 ,  H01L22/12 ,  H01L22/24

摘要： A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3.

公开(公告)号：US08900971B2

公开(公告)日：2014-12-02

申请号：US13978840

申请日：2012-01-06

申请人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kyoko Mitani

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L23/00 ,  H01L21/762 ,  H01L21/84

CPC分类号： H01L24/83 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/83 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

摘要翻译： 本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层 的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。 结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。

公开(公告)号：US08877609B2

公开(公告)日：2014-11-04

申请号：US14007584

申请日：2012-04-10

申请人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kyoko Mitani

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/76251 ,  H01L21/76256 ,  H01L21/84 ,  H01L27/1207

摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

摘要翻译： 一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

公开(公告)号：US20140120695A1

公开(公告)日：2014-05-01

申请号：US14007584

申请日：2012-04-10

申请人： Yuuki Ooi ,  Wei Feng Qu ,  Tsuyoshi Ohtsuki ,  Kyoko Mitani ,  Fumio Tahara

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/76256 ,  H01L21/84 ,  H01L27/1207

摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

摘要翻译： 一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

公开(公告)号：US20140119399A1

公开(公告)日：2014-05-01

申请号：US14124827

申请日：2012-06-18

申请人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi

发明人： Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi

IPC分类号： G01N1/28

CPC分类号： G01N1/28 ,  H01L22/12 ,  H01L22/24

摘要： A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3.

摘要翻译： 一种用于检测掺杂有氮的硅单晶晶片中的晶体缺陷的方法，其初始氧浓度为8ppma（JEIDA）或更低的硅单晶晶片。 该方法还包括以下步骤：通过在氧气氛中对硅单晶晶片进行热处理，使缺陷尺寸为25nm或更小的晶体缺陷明显并且可通过将氧注入晶体缺陷来检测; 并且在热处理温度被设定为使得当硅固溶度和硅单晶晶片热处理的初始氧浓度之比设定为α=氧固体时，检测硅单晶晶片的晶体缺陷 溶解度/初始氧浓度α在1〜3的范围内。

公开(公告)号：US08904840B2

公开(公告)日：2014-12-09

申请号：US13207580

申请日：2011-08-11

申请人： Yuuki Ooi ,  Atsushi Ooshima ,  Nobuyuki Sone

发明人： Yuuki Ooi ,  Atsushi Ooshima ,  Nobuyuki Sone

IPC分类号： B21H3/04 ,  B21H7/18 ,  B05C11/02 ,  B21B19/12 ,  B21D3/02 ,  B21B27/00 ,  B21D15/00 ,  B21J15/12 ,  B05C1/08

CPC分类号： B21H7/182 ,  B05C1/0808 ,  B05C1/0826 ,  B05C11/025

摘要： A method for manufacturing a coating rod, comprising the steps of preparing a rod material, disposing a pair of form rolling dies having a plurality of helical convex threads, so that the closure angle of a main axis of each of the form rolling dies in the horizontal direction of the main axis is substantially 0.25° or larger but not larger than 0.35° with respect to an axial direction of the rod material, and form-rolling the rod material by feeding the rod material along the axial direction thereof and rotating the pair of form rolling dies around the main axes thereof, while clamping the rod material with the pair of form rolling dies.

摘要翻译： 一种涂覆杆的制造方法，其特征在于，包括以下步骤：制备棒材，设置具有多个螺旋状的凸形螺纹的一对成型轧制模具，使得各个成形轧制模具的主轴的闭合角度在 主轴的水平方向相对于棒材的轴向大致为0.25°以上且0.35°以下，通过沿杆的轴向供给杆材，并使杆 的轧制模具围绕其主轴线，同时用一对成型轧制模具夹紧杆材料。