公开(公告)号：US20070108888A1

公开(公告)日：2007-05-17

申请号：US11442471

申请日：2006-05-26

申请人： Wei-Kuo Chen ,  Wen-Cheng Ke

发明人： Wei-Kuo Chen ,  Wen-Cheng Ke

IPC分类号： H01J1/62

CPC分类号： C09K11/7774 ,  B82Y20/00 ,  C09K11/0883 ,  C09K11/584 ,  C09K11/613 ,  C09K11/642 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7789 ,  C09K11/7791 ,  C09K11/7792 ,  C09K11/883 ,  H01L33/08 ,  H01L33/18 ,  H01L33/50

摘要： A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

摘要翻译： 多波长发光器件的结构包括多层有源层结构。 每个堆叠层包括较低能带隙4和较高能带隙势垒层3，其中该器件中的至少一个堆叠层含有纳米颗粒。 结果，多层有源层结构的发射波长包括发射波长的部分（或全部）来自包含纳米颗粒的堆叠层，并且发射波长的部分（或全部）来自不包含 纳米颗粒。 在另一个实施例中，多层有源层结构的发射波长的部分（或全部）也可以用于从磷光体触发一个或多个磷光，因此这种磷光体转换的发光器件的发射波长可能会部分地 从多层有源层本身和部分（或全部）与荧光体。

公开(公告)号：US20060029792A1

公开(公告)日：2006-02-09

申请号：US11005547

申请日：2004-12-06

申请人： Wei-Kuo Chen ,  Ming-Chih Lee ,  Wu-Ching Chou ,  Wen-Hsiung Chen ,  Wen-Cheng Ke

发明人： Wei-Kuo Chen ,  Ming-Chih Lee ,  Wu-Ching Chou ,  Wen-Hsiung Chen ,  Wen-Cheng Ke

IPC分类号： B05D7/00 ,  C23C16/00 ,  B32B5/16

CPC分类号： C30B29/406 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/00 ,  C30B25/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/52 ,  C30B29/605 ,  Y10T428/25

摘要： Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.

摘要翻译： 在没有掩模制造并允许任何程度的晶格失配的情况下在缓冲层上制造自组装纳米颗粒的方法; 即包含III-V族，II-VI族或IV-VI族的二元，三元或四元纳米颗粒。 该方法包括施加缓冲层的第一步骤，打开吹扫气体以将第一反应物调节到较低的第一流速的第二步骤，然后将第二反应物供应到缓冲层以形成富金属的岛 以及再次打开吹扫气体以将第一反应物调节到较高的第二流量的缓冲层上的第三步骤。 在富金属的岛上形成二元，三元或四元III-V，II-VI和IV-IV半导体材料的纳米颗粒。 然后在高温下在第一反应物流下重结晶形成高质量的纳米颗粒。

公开(公告)号：US07294202B2

公开(公告)日：2007-11-13

申请号：US11005547

申请日：2004-12-06

申请人： Wei-Kuo Chen ,  Ming-Chih Lee ,  Wu-Ching Chou ,  Wen-Hsiung Chen ,  Wen-Cheng Ke

发明人： Wei-Kuo Chen ,  Ming-Chih Lee ,  Wu-Ching Chou ,  Wen-Hsiung Chen ,  Wen-Cheng Ke

IPC分类号： C30B29/60

CPC分类号： C30B29/406 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/00 ,  C30B25/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/52 ,  C30B29/605 ,  Y10T428/25

摘要： Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.

摘要翻译： 在没有掩模制造并允许任何程度的晶格失配的情况下在缓冲层上制造自组装纳米颗粒的方法; 即包含III-V族，II-VI族或IV-VI族的二元，三元或四元纳米颗粒。 该方法包括施加缓冲层的第一步骤，打开吹扫气体以将第一反应物调节到较低的第一流速的第二步骤，然后将第二反应物供应到缓冲层以形成富金属的岛 以及再次打开吹扫气体以将第一反应物调节到较高的第二流量的缓冲层上的第三步骤。 在富金属的岛上形成二元，三元或四元III-V，II-VI和IV-IV半导体材料的纳米颗粒。 然后在高温下在第一反应物流下重结晶形成高质量的纳米颗粒。