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    Light-emitting diode having chemical compound based reflective structure
    1.
    发明申请
    Light-emitting diode having chemical compound based reflective structure 审中-公开
    具有化学反应结构的发光二极管

    公开(公告)号：US20050104078A1

    公开(公告)日：2005-05-19

    申请号：US10705929

    申请日：2003-11-13

    申请人： Wei-Tai Cheng ,  Jui-Hung Yeh

    发明人： Wei-Tai Cheng ,  Jui-Hung Yeh

    IPC分类号： H01L33/46 ,  H01L33/00

    CPC分类号： H01L33/46

    摘要： A light-emitting diode (LED) includes a plurality of reflective layers stacked over each other and each comprising a distributed Bragg reflector, a substrate, an N type semiconductor formed on the substrate, a light emitting layer formed on the N type semiconductor layer and a P type semiconductor formed on the light emitting layer. The stack of the reflective layers is formed under the substrate or the stack is formed between the substrate and the N type semiconductor layer. The reflective layers receive and reflect light incident at different angles thereby alleviating escape of light from the light emitting diode and enhancing overall brightness of the light emitting diode.

    摘要翻译： 发光二极管（LED）包括彼此堆叠的多个反射层，每个反射层包括分布式布拉格反射器，衬底，形成在衬底上的N型半导体，形成在N型半导体层上的发光层和 形成在发光层上的P型半导体。 反射层的叠层形成在衬底下方，或者叠层形成在衬底和N型半导体层之间。 反射层接收和反射以不同角度入射的光，从而减轻来自发光二极管的光的逸出并提高发光二极管的整体亮度。

    Manufacturing method and structure of LED chip
    3.
    发明授权
    Manufacturing method and structure of LED chip 有权
    LED芯片的制造方法和结构

    公开(公告)号：US08410487B1

    公开(公告)日：2013-04-02

    申请号：US13326528

    申请日：2011-12-15

    申请人： Wei-Tai Cheng ,  Ming-Hung Chen ,  Ching-Jen Pan

    发明人： Wei-Tai Cheng ,  Ming-Hung Chen ,  Ching-Jen Pan

    IPC分类号： H01L29/15

    CPC分类号： H01L27/153 ,  H01L33/0079

    摘要： A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.

    摘要翻译： 公开了一种发光二极管（LED）芯片的制造方法和结构。 该方法包括以下步骤：提供导电块; 提供外延块; 粘接; 去除外延衬底; 制造独立的LED; 形成电介质层; 并进行电气连接。 第一LED，第二LED和第三LED形成在导电块上，其中第一和第二LED串联电连接，并且第二和第三LED并联电连接。 因此，可以形成具有串联和并联LED的灵活设计的基本单元，以增加基于LED芯片的设计的多样性和应用。

    High-voltage AC light-emitting diode structure
    5.
    发明授权
    High-voltage AC light-emitting diode structure 有权
    高压交流发光二极管结构

    公开(公告)号：US08710517B2

    公开(公告)日：2014-04-29

    申请号：US13407028

    申请日：2012-02-28

    申请人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

    发明人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

    IPC分类号： H01L27/15

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16

    摘要： A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

    摘要翻译： 提供了高压交流（AC）发光二极管（LED）结构。 高压AC LED结构包括电路基板和多个高压LED（HV LED）芯片。 每个HV LED芯片包括第一基板，粘合层，第一欧姆接触层，外延层，第一绝缘层，至少两个第一导电板，至少两个第二导电板和第二基板 。 通过晶片级工艺制造的HV LED芯片耦合到低成本电路基板以产生小型化的高压AC LED结构。

    High-voltage AC LED structure
    6.
    发明授权
    High-voltage AC LED structure 有权
    高压交流LED结构

    公开(公告)号：US08643291B2

    公开(公告)日：2014-02-04

    申请号：US13407398

    申请日：2012-02-28

    申请人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

    发明人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

    IPC分类号： H05B37/00

    CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a high-voltage alternating current light-emitting diode (AC LED) structure. The high-voltage AC LED structure includes a circuit substrate and a plurality of AC LED chips. The AC LED chips each include an insulated substrate, an LED set, a first metal layer and a second metal layer. The AC LED chips manufactured by a wafer level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

    摘要翻译： 本发明提供一种高压交流发光二极管（AC LED）结构。 高压AC LED结构包括电路基板和多个AC LED芯片。 AC LED芯片各自包括绝缘基板，LED组，第一金属层和第二金属层。 通过晶片级工艺制造的AC LED芯片耦合到低成本电路基板，以产生小型化的高压AC LED结构。

    Light emitting diode
    7.
    发明申请
    Light emitting diode 审中-公开
    发光二极管

    公开(公告)号：US20070152309A1

    公开(公告)日：2007-07-05

    申请号：US11319649

    申请日：2005-12-29

    申请人： Wei-Tai Cheng

    发明人： Wei-Tai Cheng

    IPC分类号： H01L23/495

    CPC分类号： H01L33/486 ,  H01L24/73 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting diode comprises: at least two electrodes; a first encapsulant layer; at least a chip; and a second encapsulant layer. The electrodes are fixed by the first encapsulant layer. The chip is electrically connected to the electrodes. The chip and the electrodes are covered with the second encapsulant layer. As a result, the substrate-free, super-thin light emitting diode is completed.

    摘要翻译： 发光二极管包括：至少两个电极; 第一密封剂层; 至少一块芯片; 和第二密封剂层。 电极由第一密封剂层固定。 芯片电连接到电极。 芯片和电极被第二密封剂层覆盖。 结果，完成了无衬底的超薄发光二极管。