公开(公告)号：US06630692B2

公开(公告)日：2003-10-07

申请号：US09870330

申请日：2001-05-29

申请人： Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

发明人： Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.

摘要翻译： 提供了具有改进性能的III-氮化物发光二极管。 在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。 在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。