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    III-nitride light-emitting devices with improved high-current efficiency
    2.
    发明授权
    III-nitride light-emitting devices with improved high-current efficiency 有权
    具有改善的高电流效率的III族氮化物发光器件

    公开(公告)号：US06943381B2

    公开(公告)日：2005-09-13

    申请号：US10769590

    申请日：2004-01-30

    申请人： Nathan F. Gardner ,  Christopher P. Kocot ,  Stephen A. Stockman

    发明人： Nathan F. Gardner ,  Christopher P. Kocot ,  Stephen A. Stockman

    IPC分类号： H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/32

    摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.

    摘要翻译： 发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。 例如，III-氮化物层可以是载流子限制层。 在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。 间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。 可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

    Chirped multi-well active region LED
    5.
    发明授权
    Chirped multi-well active region LED 失效
    啁啾多功能区LED

    公开(公告)号：US06504171B1

    公开(公告)日：2003-01-07

    申请号：US09490777

    申请日：2000-01-24

    申请人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    发明人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    IPC分类号： H01L2906

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.

    摘要翻译： 发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率 在有源区域的发光有源层（即，跨过有源区域）的分布曲线。 啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布 活性区内的组成。 因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。 器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。 发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

    Semiconductor light emitting device including photonic band gap material and luminescent material
    6.
    发明授权
    Semiconductor light emitting device including photonic band gap material and luminescent material 有权
    半导体发光器件包括光子带隙材料和发光材料

    公开(公告)号：US06956247B1

    公开(公告)日：2005-10-18

    申请号：US10855292

    申请日：2004-05-26

    申请人： Stephen A. Stockman

    发明人： Stephen A. Stockman

    IPC分类号： H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L31/0232

    CPC分类号： H01L33/50 ,  H01L33/44 ,  H01L33/504 ,  H01L33/508 ,  H01L2933/0083

    摘要： A light emitting structure includes a semiconductor light emitting device capable of emitting first light having a first peak wavelength, a luminescent material capable of emitting second light having a second peak wavelength disposed over the semiconductor light emitting device, and a photonic band gap material disposed between the light emitting device and the luminescent material. The photonic band gap material is capable of transmitting the first light and reflecting the second light, regardless of the angle of incidence of the first and second light.

    摘要翻译： 发光结构包括能够发射具有第一峰值波长的第一光的半导体发光器件，能够发射设置在半导体发光器件上的具有第二峰值波长的第二光的发光材料和设置在半导体发光器件之间的光子带隙材料 发光器件和发光材料。 光子带隙材料能够透射第一光并反射第二光，而与第一和第二光的入射角无关。

    Light emitting devices with compact active regions
    8.
    发明授权
    Light emitting devices with compact active regions 有权

    公开(公告)号：US06900474B2

    公开(公告)日：2005-05-31

    申请号：US10632720

    申请日：2003-07-31

    申请人： Mira S. Misra ,  Yu-Chen Shen ,  Stephen A. Stockman

    发明人： Mira S. Misra ,  Yu-Chen Shen ,  Stephen A. Stockman

    IPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/40 ,  H01L51/52 ,  H01L33/00

    CPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/405 ,  H01L51/5265

    摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.

    III-nitride light emitting device with reduced polarization fields
    9.
    发明授权
    III-nitride light emitting device with reduced polarization fields 有权
    具有降低的偏振场的III族氮化物发光器件

    公开(公告)号：US07115908B2

    公开(公告)日：2006-10-03

    申请号：US10769260

    申请日：2004-01-30

    申请人： Satoshi Watanabe ,  Stephen A. Stockman

    发明人： Satoshi Watanabe ,  Stephen A. Stockman

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/32

    摘要： A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m2. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.

    摘要翻译： 半导体发光器件包括夹在两个间隔层之间的发光层。 间隔层中的至少一个间隔层的净极化与发光层中的净极化之间的差异小于具有常规间隔层的器件，例如GaN间隔层。 间隔层中的至少一个间隔层的净极化与发光层中的净极化之间的差异小于约0.02C / m 2。 在一些实施例中，间隔层中的至少一个是铝，铟，镓和氮的四元合金。

    Thin multi-well active layer LED with controlled oxygen doping
    10.
    发明授权
    Thin multi-well active layer LED with controlled oxygen doping 失效
    薄多孔有源层LED，具有受控氧掺杂

    公开(公告)号：US06469314B1

    公开(公告)日：2002-10-22

    申请号：US09467941

    申请日：1999-12-21

    申请人： Patrick N. Grillot ,  Eugene I. Chen ,  Jen-Wu Huang ,  Stephen A. Stockman

    发明人： Patrick N. Grillot ,  Eugene I. Chen ,  Jen-Wu Huang ,  Stephen A. Stockman

    IPC分类号： H01L3100

    CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06

    摘要： An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is regulated to be higher when the LED has been configured to have a longer dominant emission wavelength. Since the dominant emission wavelength is dependent on the composition of the active layer(s) of the LED, the O dopant concentration in the layer is related to the composition of the active layer(s). The controlled O doping improves the reliability while minimizing any light output penalty due to the introduction of O dopants. In an exemplary embodiment, the LED is an AlGaInP LED that includes a substrate, an optional distributed Bragg reflector layer, an n-type confining layer, an optional n-type set-back layer, an active region, an optional p-type set-back layer, a p-type confining layer and an optional window layer. In a preferred embodiment, the active region includes a multiplicity of active layers, where each active layer is 125 Angstroms thick or less and the active layers are separated from each other by barrier layers whose composition is Al0.5In0.5P and whose thickness is 100 Angstroms or less. In a preferred embodiment, both the p-type confining layer and the p-type set-back layer are doped with a controlled amount of O, depending on the dominant emission wavelength of the LED. In addition to the O doping, the p-type confining layer of the LED is preferably doped with a high amount of p-type dopants, such as Mg, Zn, C or Be. During high temperature thermal processing, this high concentration of p-type dopants then partially diffuses into the active region, resulting in a heavily p-type doped active region.

    摘要翻译： LED和制造LED的方法，其利用受控氧（O）掺杂来形成具有与LED的主发射波长相关的O掺杂剂浓度的至少一层LED。 当LED被配置为具有更长的主发射波长时，O掺杂剂浓度被调节为更高。 由于主发射波长取决于LED的有源层的组成，所以该层中的O掺杂剂浓度与有源层的组成有关。 受控O掺杂提高了可靠性，同时最小化由于引入O掺杂剂导致的任何光输出损失。 在示例性实施例中，LED是AlGaInP LED，其包括衬底，可选的分布式布拉格反射器层，n型约束层，可选的n型反射层，有源区，可选的p型集合 背面层，p型约束层和可选窗口层。 在优选实施例中，有源区包括多个有源层，其中每个有源层的厚度为125埃或更小，并且有源层通过其组成为Al 0.5 In 0.5 P并且其厚度为100的势垒层彼此分离 埃或以下。 在优选实施例中，取决于LED的主要发射波长，p型限制层和p型封装层都掺杂有受控量的O。 除了O掺杂之外，LED的p型限制层优选掺杂有大量的p型掺杂剂，例如Mg，Zn，C或Be。 在高温热处理期间，这种高浓度的p型掺杂剂然后部分地扩散到有源区，导致大量p型掺杂的有源区。