公开(公告)号：US20190252146A1

公开(公告)日：2019-08-15

申请号：US16342475

申请日：2017-10-17

Applicant: WiSys Technology Foundation, Inc.

Inventor： Charles D. Nelson ,  Harold T Evensen

IPC: H01J21/10 ,  H01L51/10 ,  H01L51/05 ,  H01L51/00 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J9/18

CPC classification number: H01J21/105 ,  H01J1/304 ,  H01J9/025 ,  H01J9/18 ,  H01J19/24 ,  H01J19/38 ,  H01J19/82 ,  H01L51/0017 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

Abstract: A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.