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    Integrated hot spot detector for design, analysis, and control
    1.
    发明授权
    Integrated hot spot detector for design, analysis, and control 失效
    集成热点检测器，用于设计，分析和控制

    公开(公告)号：US5902044A

    公开(公告)日：1999-05-11

    申请号：US883911

    申请日：1997-06-27

    申请人： Wilbur Pricer ,  Kenneth Joseph Goodnow ,  Michel S. Michail ,  Janak Ghanshyambhai Patel ,  Sebastian T. Ventrone

    发明人： Wilbur Pricer ,  Kenneth Joseph Goodnow ,  Michel S. Michail ,  Janak Ghanshyambhai Patel ,  Sebastian T. Ventrone

    IPC分类号： G01K3/14 ,  G01K7/00

    CPC分类号： G01K3/14

    摘要： A matrix of thermal sensors is provided for accurately evaluating the thermal characteristics of an integrated circuit. The integrated circuit is evenly divided into a plurality of sectors in which a thermal comparison to a known thermal mass will be performed. Each sector includes at least one dual cell comprising a local thermal sensor for providing an output corresponding to a local temperature of the integrated circuit in that sector, and a background thermal sensor. The outputs of selective ones of the background thermal sensors are combined to provide a signal corresponding to a background temperature of the integrated circuit. A decoder/enabler arrangement is used to selectively gate the output of a specific local thermal sensor in a sector to a difference circuit where it is compared to the collective output of selected ones of the background sensors to generate a thermal measurement of the sector under test.

    摘要翻译： 提供了一种热传感器矩阵，用于精确评估集成电路的热特性。 集成电路被均匀地分成多个扇区，其中将对已知的热质量进行热比较。 每个扇区包括至少一个双电池，其包括本地热传感器，用于提供对应于该扇区中的集成电路的局部温度的输出和背景热传感器。 背景热传感器中的选择性传感器的输出被组合以提供对应于集成电路的背景温度的信号。 解码器/使能器布置用于选择性地将扇区中的特定局部热传感器的输出门控到差分电路，其中与所选择的背景传感器的集合输出进行比较以产生被测扇区的热测量 。

    FLIP FERAM CELL AND METHOD TO FORM SAME
    4.
    发明申请
    FLIP FERAM CELL AND METHOD TO FORM SAME 有权
    翻转毛细胞及其形成方法

    公开(公告)号：US20070164337A1

    公开(公告)日：2007-07-19

    申请号：US11687000

    申请日：2007-03-16

    申请人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

    发明人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

    IPC分类号： H01L29/94

    CPC分类号： H01L28/55 ,  H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  Y10S438/977

    摘要： A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.

    摘要翻译： 提供了一种形成集成的铁电/ CMOS结构的方法，其有效地分离不兼容的高温沉积和退火工艺。 本发明的方法包括分别形成CMOS结构和铁电输送晶片。 然后使这些分离的结构与每个结构接触，并且通过使用低温退火步骤将输送晶片的铁电体膜结合到CMOS结构的上导电电极层。 然后去除输送晶片的一部分，提供集成的FE / CMOS结构，其中铁电电容器形成在CMOS结构的顶部。 电容器通过CMOS结构的所有布线级与CMOS结构的晶体管接触。