Transition-metal doped sulfide, selenide, and telluride laser crystal
and lasers
    1.
    发明授权
    Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers 失效
    过渡金属掺杂硫化物,硒化物和碲化物激光晶体和激光器

    公开(公告)号:US5541948A

    公开(公告)日:1996-07-30

    申请号:US346457

    申请日:1994-11-28

    IPC分类号: H01S3/16

    摘要: A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 .mu.m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d.sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.

    摘要翻译: 一类新型的固体激光晶体和激光器由过渡金属掺杂的硫化物,硒化物和碲化物主体晶体形成,它们具有四个重叠的配位置。 主体晶体包括II-VI化合物。 主体晶体掺杂有过渡金属激光离子,例如铬,钴或铁。 特别是Cr2 +掺杂的ZnS和ZnSe在2.3μm附近产生激光作用。 也可以使用具有相似结构的氧化物,氯化物,氟化物,溴化物和碘化物晶体。 这些激光材料的重要方面是主晶体的四面体位置对称性,低激发态吸收损耗和高发光效率,以及过渡金属离子的d4和d6电子结构。 相同的材料也可用作无源Q开关应用的可饱和吸收器。 激光材料可用作放大器和振荡器中的增益介质; 这些增益介质可以并入到波导和半导体激光器中。

    Ytterbium- and neodymium-doped vanadate laser hose crystals having the
apatite crystal structure
    2.
    发明授权
    Ytterbium- and neodymium-doped vanadate laser hose crystals having the apatite crystal structure 失效
    具有磷灰石晶体结构的镱和钕掺杂的钒酸盐激光软管晶体

    公开(公告)号:US5341389A

    公开(公告)日:1994-08-23

    申请号:US72951

    申请日:1993-06-08

    摘要: Yb.sup.3+ and Nd.sup.3+ doped Sr.sub.5 (VO.sub.4).sub.3 F crystals serve as useful infrared laser media that exhibit low thresholds of oscillation and high slope efficiencies, and can be grown with high optical quality. These laser media possess unusually high absorption and emission cross sections, which provide the crystals with the ability to generate greater gain for a given amount of pump power. Many related crystals such as Sr.sub.5 (VO.sub.4).sub.3 F crystals doped with other rare earths, transition metals, or actinides, as well as the many structural analogs of Sr.sub.5 (VO.sub.4).sub.3 F, where the Sr.sup.2+ and F.sup.- ions are replaced by related chemical species, have similar properties.

    摘要翻译: Yb3 +和Nd3 +掺杂的Sr5(VO4)3F晶体作为有效的红外激光介质,具有较低的振荡阈值和较高的斜率效率,可以以高光学质量生长。 这些激光介质具有非常高的吸收和发射截面,为晶体提供了在给定量的泵浦功率下产生更大增益的能力。 许多相关的晶体,如掺杂有其他稀土,过渡金属或锕系元素的Sr5(VO4)3F晶体,以及Sr5(VO4)3F的许多结构类似物,其中Sr2 +和F-离子被相关化学物质所取代 ,具有相似的属性。

    Low-phonon-frequency chalcogenide crystalline hosts for rare earth
lasers operating beyond three microns
    3.
    发明授权
    Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns 失效
    用于超过三微米的稀土激光器的低声子频率硫族化物晶体主机

    公开(公告)号:US6047013A

    公开(公告)日:2000-04-04

    申请号:US235650

    申请日:1999-01-22

    IPC分类号: H01S3/16

    CPC分类号: H01S3/16 H01S3/1603 H01S3/163

    摘要: The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.

    摘要翻译: 本发明包括RE掺杂的MA2X4晶体增益介质,其中M包括二价离子如Mg,Ca,Sr,Ba,Pb,Eu或Yb; A选自包括Al,Ga和In的三价离子; X是硫属元素离子S,Se和Te之一; RE表示三价稀土离子。 MA2X4增益介质可用于激光振荡器或激光放大器。 可能的泵浦源包括二极管激光器以及其他激光泵源。 所产生的激光波长大于3微米,因为该主机介质的低声子频率是可能的。 本发明可以用于种子光学装置,例如光参量振荡器和其它激光器。

    Hybrid solid state laser system using a neodymium-based master oscillator and an ytterbium-based power amplifier
    5.
    发明授权
    Hybrid solid state laser system using a neodymium-based master oscillator and an ytterbium-based power amplifier 失效
    使用基于钕的主振荡器和基于镱的功率放大器的混合固态激光系统

    公开(公告)号:US06212215B1

    公开(公告)日:2001-04-03

    申请号:US08409244

    申请日:1995-03-24

    IPC分类号: H01S314

    摘要: In a master oscillator-power amplifier (MOPA) hybrid laser system, the master oscillator (MO) utilizes a Nd3+-doped gain medium and the power amplifier (PA) utilizes a diode-pumped Yb3+-doped material. The use of two different laser gain media in the hybrid MOPA system provides advantages that are otherwise not available. The Nd-doped gain medium preferably serves as the MO because such gain media offer the lowest threshold of operation and have already been engineered as practical systems. The Yb-doped gain medium preferably serves in the diode-pumped PA to store pump energy effectively and efficiently by virtue of the long emission lifetime, thereby reducing diode pump costs. One crucial constraint on the MO and PA gain media is that the Nd and Yb lasers must operate at nearly the same wavelength. The 1.047 &mgr;m Nd:YLF/Yb:S-FAP [Nd:LiYF4/Yb:Sr5(PO4)3F] hybrid MOPA system is a preferred embodiment of the hybrid Nd/Yb MOPA.

    摘要翻译: 在主振荡器功率放大器(MOPA)混合激光系统中,主振荡器(MO)利用Nd3 +掺杂增益介质,功率放大器(PA)利用二极管泵浦的Yb3 +掺杂材料。 在混合MOPA系统中使用两种不同的激光增益介质提供了另外不可用的优点。 Nd掺杂增益介质优选用作MO,因为这样的增益介质提供了最低的操作阈值,并且已经被设计为实际的系统。 Yb掺杂增益介质优选用于二极管泵浦PA,由于长的发射寿命,能够有效且高效地存储泵浦能量,从而降低二极管泵的成本。 MO和PA增益介质的一个关键因素是Nd和Yb激光器必须在几乎相同的波长下工作。 1.047μmNd:YLF / Yb:S-FAP [Nd:LiYF4 / Yb:Sr5(PO4)3F]杂化MOPA系统是混合Nd / Yb MOPA的优选实施方案。

    Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6
    6.
    发明授权
    Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6 失效
    光泵浦铈掺杂LiSrAlF6和LiCaAlF6

    公开(公告)号:US5517516A

    公开(公告)日:1996-05-14

    申请号:US184944

    申请日:1994-01-21

    IPC分类号: H01S3/16

    CPC分类号: H01S3/16 H01S3/1648

    摘要: Ce.sup.3+ -doped LiSrAlF.sub.6 crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF.sub.6 with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF.sub.6 type of chemical formula, e.g. Ce-doped LiCaAlF.sub.6 and LiSrGaF.sub.6, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator.

    摘要翻译: Ce3 +掺杂的LiSrAlF6晶体被沿着晶体的c轴极化的紫外光泵浦,以有效激励激光系统。 在一个实施例中,从266nm工作的常规Nd:YAG激光器输出的偏振四次谐波被布置成泵浦Ce:LiSrAlF6,其中泵浦光沿着晶体的c轴偏振。 Ce:LiSrAlF6晶体可以放置在激光腔中,用于产生280-320nm范围内的可调谐相干紫外线辐射。 另外,Ce掺杂的晶体具有LiSrAlF6类型的化学式,例如。 可以使用Ce掺杂的LiCaAlF6和LiSrGaF6。 替代的泵浦源包括具有紫外线能力的氪或氩激光器或紫外线发射闪光灯。 泵浦光的极化会影响操作。 当280-320纳米增益区域内的光被注入或再循环到系统中时,激光系统将有效地工作,使得光束也沿着晶体的c轴极化。 Ce:LiSrAlF6激光系统可以配置为产生超短脉冲,可用于泵浦其他器件,如光参量振荡器。

    Cr.sup.3+ -doped colquiriite solid state laser material
    7.
    发明授权
    Cr.sup.3+ -doped colquiriite solid state laser material 失效
    Cr3 +掺杂colquiriite固态激光材料

    公开(公告)号:US4811349A

    公开(公告)日:1989-03-07

    申请号:US176014

    申请日:1988-03-31

    IPC分类号: C30B13/00 H01S3/16

    摘要: Chromium doped colquiriite, LiCaAlF.sub.6 :Cr.sup.3+, is useful as a tunable laser crystal that has a high intrinsic slope efficiency, comparable to or exceeding that of alexandrite, the current leading performer of vibronic sideband Cr.sup.3+ lasers. The laser output is tunable from at least 720 nm to 840 nm with a measured slop efficiency of about 60% in a Kr laser pumped laser configuration. The intrinsic slope efficiency (in the limit of large output coupling) may approach the quantum defect limited value of 83%. The high slope efficiency implies that excited state absorption (ESA) is negligible. The potential for efficiency and the tuning range of this material satisfy the requirements for a pump laser for a high density storage medium incorporating Nd.sup.3+ or Tm.sup.3+ for use in a multimegajoule single shot fusion research facility.

    摘要翻译: 铬掺杂的氯氰菊酯LiCaAlF6:Cr3 +可用作具有高固有斜率效率的可调谐激光晶体,与目前领先的振动边带Cr3 +激光器的领先业者亚历山大相比或相当。 在Kr激光泵浦激光器配置中,激光输出可以从至少720nm到840nm可调,测量的斜率效率约为60%。 本征斜率效率(大输出耦合极限)可能接近83%的量子缺陷限制值。 高斜率效率意味着激发态吸收(ESA)可以忽略不计。 这种材料的效率和调谐范围的潜力满足了用于在多焦耳单喷射聚变研究设施中使用的Nd3 +或Tm3 +的高密度存储介质的泵浦激光器的要求。

    Diode pumped alkali vapor fiber laser
    8.
    发明授权
    Diode pumped alkali vapor fiber laser 失效
    二极管泵浦碱蒸汽光纤激光器

    公开(公告)号:US07286575B2

    公开(公告)日:2007-10-23

    申请号:US11447391

    申请日:2006-06-05

    IPC分类号: H01S3/30

    摘要: A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

    摘要翻译: 提供了一种用于在二极管泵浦碱性蒸汽光子带隙光纤激光器或放大器中产生近衍射极限激光或放大近衍射极限光的方法和装置。 激光基本上产生并在碱性气体中传播而不是固体,从而允许规避常规实芯纤维的非线性和损伤限制。 碱性蒸汽被引入到光子带隙光纤的中心孔中,然后可以用来自泵浦激光器的光泵浦并且作为具有种子束的振荡器来操作,或者可以被配置为放大器。

    Diode pumped alkali vapor fiber laser
    9.
    发明授权
    Diode pumped alkali vapor fiber laser 失效
    二极管泵浦碱蒸汽光纤激光器

    公开(公告)号:US07082148B2

    公开(公告)日:2006-07-25

    申请号:US10679538

    申请日:2003-09-30

    IPC分类号: H01S3/22

    摘要: A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

    摘要翻译: 提供了一种用于在二极管泵浦碱性蒸汽光子带隙光纤激光器或放大器中产生近衍射极限激光或放大近衍射限制光的方法和装置。 激光基本上产生并在碱性气体中传播而不是固体,从而允许规避常规固体芯纤维的非线性和损伤限制。 碱性蒸汽被引入到光子带隙光纤的中心孔中,然后可以用来自泵浦激光器的光泵浦并且作为具有种子束的振荡器来操作,或者可以被配置为放大器。

    High average power scaleable thin-disk laser
    10.
    发明授权
    High average power scaleable thin-disk laser 失效
    高平均功率可扩展的薄磁盘激光器

    公开(公告)号:US06347109B1

    公开(公告)日:2002-02-12

    申请号:US09237142

    申请日:1999-01-25

    IPC分类号: H01S03933

    摘要: Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

    摘要翻译: 使用具有未掺杂帽盖层的薄盘激光增益元件可将激光器缩放到极高的平均输出功率值。 通常,这种薄盘激光器的功率缩放受到放大自发发射的有害影响的限制。 通过使用粘结到薄盘上的未掺杂的帽层扩散,放大的自发发射的发生不会如同没有使用帽层那样容易地发生,并且更大的横向薄盘可以有效地用作激光增益元件。 本发明可用作材料加工应用以及武器和防空应用的高平均功率激光器。