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1.发明授权公开(公告)号：US06972582B2
公开(公告)日：2005-12-06
申请号：US10361309
申请日：2003-02-10
CPC分类号： G01R31/2831
摘要： An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included that surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard avoids electrical communication between the probe and areas outside of the object area of the semiconductor wafer.
摘要翻译： 一种用于测量半导体晶片的至少一种电性质的装置包括探针，其包括轴，其远端具有用于与半导体晶片的物体区域电连通的导电尖端。 该装置还包括用于在导电尖端和对象区域之间施加电刺激的装置，以及用于测量半导体晶片对电刺激的响应的装置，并且用于根据响应确定对象的至少一个电特性 半导体晶片的面积。 包括探头护罩，其围绕探头的轴邻近探头的远端。 探针护罩避免了探针与半导体晶片的物体区域之外的区域之间的电气连通。
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公开(公告)号：US06657454B2
公开(公告)日：2003-12-02
申请号：US10099207
申请日：2002-03-15
申请人： William H. Howland
发明人： William H. Howland
IPC分类号： G01R2726
CPC分类号： G01R31/2656 , G01R31/2831
摘要： A method for measuring threshold voltage and average surface doping concentration of a semiconductor wafer begins by exposing a measurement site to a high intensity light immediately before a measurement sweep begins. A CV measurement sweep is made with the voltage increasing to a maximum voltage, and the response of the semiconductor wafer to CV measurement sweep is recorded. When the voltage is at the maximum voltage, the light is turned off and the capacitance of the measurement site in the absence of light is measured until the capacitance reaches equilibrium. From the recorded response, the threshold voltage and the average surface doping concentration are determined.
摘要翻译： 用于测量半导体晶片的阈值电压和平均表面掺杂浓度的方法首先在测量扫描开始之前将测量位置暴露于高强度光。 在电压升高到最大电压时进行CV测量扫描，并记录半导体晶圆对CV测量扫描的响应。 当电压处于最大电压时，光被关闭，并且在不存在光的情况下测量测量部位的电容，直到电容达到平衡。 从记录的响应中，确定阈值电压和平均表面掺杂浓度。
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3.发明授权Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer 失效用于确定半导体晶片的半导体材料中的缺陷和杂质浓度的方法和装置公开(公告)号：US06836139B2
公开(公告)日：2004-12-28
申请号：US10277689
申请日：2002-10-22
申请人： William H. Howland
发明人： William H. Howland
IPC分类号： G01R3126
CPC分类号： G01R31/2648 , G01N27/22
摘要： A charge carrier lifetime of a semiconductor wafer is measured by contacting an electrically conductive measurement probe to a surface of a semiconductor wafer to form a capacitor. A DC voltage having an AC voltage superimposed thereon is applied to the capacitor and the DC voltage is swept between a first voltage and a second voltage. At the second voltage, the semiconductor wafer adjacent the contact between the measurement probe and the surface of the semiconductor wafer is exposed to a light pulse. After the light pulse terminates, a change in the capacitance of the capacitor over time is determined. From the thus determined change in capacitance, a charge carrier lifetime of the semiconductor wafer is determined.
摘要翻译： 通过使导电测量探针与半导体晶片的表面接触来形成电容器来测量半导体晶片的电荷载流子寿命。 将叠加有交流电压的直流电压施加到电容器，并且在第一电压和第二电压之间扫描直流电压。 在第二电压下，与测量探针和半导体晶片的表面之间的接触相邻的半导体晶片暴露于光脉冲。 在光脉冲终止之后，确定电容器随时间的电容的变化。 根据如此确定的电容变化，确定半导体晶片的电荷载流子寿命。
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公开(公告)号：US06741093B2
公开(公告)日：2004-05-25
申请号：US10100437
申请日：2002-03-18
IPC分类号： G01R3102
CPC分类号： G01R31/2648 , G01R31/2831 , G01R31/2886 , H01L22/14
摘要： A product semiconductor wafer has integrated circuits separated by scribe lines. A probe having an elastically deformable, electrically conductive tip is moved into contact with one of the scribe lines thereby forming a test structure. A suitable electrical stimulus is applied to the test structure and a response of the test structure to the electrical stimulus is measured. At least one property of the product semiconductor wafer is determined from the response.
摘要翻译： 产品半导体晶片具有由划线分开的集成电路。 具有可弹性变形的导电尖端的探针移动成与划线之一接触，从而形成测试结构。 对测试结构施加合适的电刺激，并且测量测试结构对电刺激的响应。 根据响应确定产品半导体晶片的至少一个特性。
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5.发明授权Apparatus and method for determining doping concentration of a semiconductor wafer 失效用于确定半导体晶片的掺杂浓度的装置和方法公开(公告)号：US06632691B1
公开(公告)日：2003-10-14
申请号：US10120734
申请日：2002-04-11
申请人： William H. Howland
发明人： William H. Howland
IPC分类号： G01R3126
CPC分类号： G01R31/2648 , G01R1/06738 , G01R31/312
摘要： An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included and surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard also insulates the conductive tip from the semiconductor wafer.
摘要翻译： 一种用于测量半导体晶片的至少一种电性质的装置包括探针，其包括轴，其远端具有用于与半导体晶片的物体区域电连通的导电尖端。 该装置还包括用于在导电尖端和对象区域之间施加电刺激的装置，以及用于测量半导体晶片对电刺激的响应的装置，并且用于根据响应确定对象的至少一个电特性 半导体晶片的面积。 包括一个探针护罩，并围绕探头的轴围绕探头的远端。 探头保护罩也将导电尖端与半导体晶圆绝缘。
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6.发明授权Apparatus and method for determining electrical properties of a semiconductor wafer 失效用于确定半导体晶片的电性能的装置和方法公开(公告)号：US06894519B2
公开(公告)日：2005-05-17
申请号：US10121130
申请日：2002-04-11
申请人： William H. Howland
发明人： William H. Howland
CPC分类号： G01R31/2648 , G01R1/06738 , G01R31/312
摘要： An apparatus for measuring an electrical property of a semiconductor wafer includes a probe having an electrically conductive tip formed at least in part of a material that is transparent to light and a probe guard disposed adjacent the electrically conductive tip. The apparatus includes a device for selectively applying a first electrical stimulus between a semiconductor wafer and the electrically conductive tip of each probe when it is positioned in spaced relation to the semiconducting material forming the semiconductor wafer, and a device for selectively applying a second electrical stimulus between the semiconductor wafer and the probe guard of each probe. A device for measuring a response of the semiconductor wafer to the electrical stimuli and for determining from the response at least one electrical property thereof is provided. A light source can be positioned to selectively emit light through the transparent material toward the semiconductor wafer.
摘要翻译： 一种用于测量半导体晶片的电性能的装置包括具有至少部分由光透明的材料形成的导电尖端的探针和邻近导电尖端设置的探针护罩。 该装置包括一种用于在半导体晶片和每个探针的导电尖端之间选择性地施加第一电刺激的装置，当其与形成半导体晶片的半导体材料间隔开时，以及用于选择性地施加第二电刺激 在每个探针的半导体晶片和探针护罩之间。 提供了一种用于测量半导体晶片对电刺激的响应并根据响应确定其至少一种电特性的装置。 光源可以被定位成选择性地通过透明材料朝向半导体晶片发射光。
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公开(公告)号：US06842029B2
公开(公告)日：2005-01-11
申请号：US10120661
申请日：2002-04-11
申请人： William H. Howland
发明人： William H. Howland
IPC分类号： G01R1/06 , G01R31/28 , G01R31/312 , H01L21/66 , G01R31/02
CPC分类号： H01L22/14 , G01R31/2886 , G01R31/312 , H01L2924/0002 , H01L2924/00
摘要： A multi-probe assembly includes a chuck assembly configured to receive a back or front surface of a semiconductor wafer. A multi-probe holder has a plurality of probes each having an elastically deformable conductive tip movable into contact with a front surface of a dielectric or a front surface of a semiconducting material. A means applies an electrical stimulus to each tip, measures a response to the electrical stimulus, and determines at least one electrical property of the dielectric and/or the semiconducting material. A method for measuring at least one electrical property applies a probe (or plurality of probes) having an elastically deformable conductive tip to a scribe line(s). An electrical stimulus is applied to the probe or one of the probes with the remaining probes grounded. A response to the electrical stimulus is measured and at least one electrical property of the semiconductor wafer is determined from the response.
摘要翻译： 多探头组件包括构造成接收半导体晶片的后表面或前表面的卡盘组件。 多探针保持器具有多个探针，每个探针具有可弹性变形的导电尖端，其可与电介质的前表面或半导体材料的前表面接触。 A装置对每个尖端施加电刺激，测量对电刺激的响应，并确定电介质和/或半导体材料的至少一个电性质。 用于测量至少一种电性能的方法将具有可弹性变形的导电尖端的探针（或多个探针）施加到划线。 电刺激被施加到探针或其中一个探针，其余探针接地。 测量对电刺激的响应，并根据响应确定半导体晶片的至少一个电特性。
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8.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 失效具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US06771092B1
公开(公告)日：2004-08-03
申请号：US10298778
申请日：2002-11-18
IPC分类号： G01R3102
CPC分类号： G01R31/311
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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9.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 有权具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US07230443B1
公开(公告)日：2007-06-12
申请号：US11210093
申请日：2005-08-23
IPC分类号： G01R31/02
CPC分类号： G01R31/2831 , G01R31/2648
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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10.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 失效具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US06937050B1
公开(公告)日：2005-08-30
申请号：US10809092
申请日：2004-03-25
IPC分类号： G01R31/311 , G01R31/02
CPC分类号： G01R31/311
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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