公开(公告)号：US20050106872A1

公开(公告)日：2005-05-19

申请号：US10714985

申请日：2003-11-17

申请人： William Hong ,  Chia-Che Chuang ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： William Hong ,  Chia-Che Chuang ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B1/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02074 ,  H01L21/02065 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.

摘要翻译： 公开了作为CMP工艺流程的一部分的氧化物抛光工艺。 在第一抛光站抛光铜层并且在第二抛光站抛光扩散阻挡层之后，在第三抛光工位上的键序列是施加第一氧化物浆料和第一DI水冲洗，然后是第二抛光 氧化物浆液，然后用第二次DI水冲洗。 因此，缺陷计数从几千减少到小于100.另一个重要因素是能够更有效地除去颗粒的低下降力。 改进的氧化物抛光方法具有与单一氧化物抛光剂和DI水漂洗方法相同的生产量，并且可以在任何三种浆料铜CMP工艺流程中实施。

公开(公告)号：US06946397B2

公开(公告)日：2005-09-20

申请号：US10714985

申请日：2003-11-17

申请人： William Hong ,  Chia-Che Chung ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： William Hong ,  Chia-Che Chung ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B1/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02074 ,  H01L21/02065 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.

摘要翻译： 公开了作为CMP工艺流程的一部分的氧化物抛光工艺。 在第一抛光站抛光铜层并且在第二抛光站抛光扩散阻挡层之后，在第三抛光工位上的键序列是施加第一氧化物浆料和第一DI水冲洗，然后是第二抛光 氧化物浆液，然后用第二次DI水冲洗。 因此，缺陷计数从几千减少到小于100.另一个重要因素是能够更有效地除去颗粒的低下降力。 改进的氧化物抛光方法具有与单一氧化物抛光剂和DI水漂洗方法相同的生产量，并且可以在任何三种浆料铜CMP工艺流程中实施。

公开(公告)号：US06686284B2

公开(公告)日：2004-02-03

申请号：US10072244

申请日：2002-02-06

申请人： Chi-Wei Chung ,  Tung-Ching Tseng ,  Tsu Shih ,  Syun-Ming Jang

发明人： Chi-Wei Chung ,  Tung-Ching Tseng ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01L2100

CPC分类号： H01L21/3212 ,  B24B37/32 ,  B24B55/02 ,  H01L21/31053

摘要： A chemical mechanical polishing apparatus that is equipped with a chilled retaining ring and a method for using the apparatus are described. The retaining ring is mounted therein a heat transfer means such as a metal tube and flowing therethrough a heat exchanging fluid for carrying away heat from the wafer mounted in the retaining ring, resulting in a temperature reduction in the slurry solution that contacts the wafer. The present invention apparatus and method therefore reduces the delamination problem for low k dielectric materials during polishing and the wafer scratching problem.

摘要翻译： 描述了配备有冷冻保持环的化学机械抛光装置和使用该装置的方法。 保持环安装有诸如金属管的传热装置，并在其中流过用​​于从安装在保持环中的晶片携带热量的热交换流体，导致与晶片接触的浆液中的温度降低。 因此，本发明的装置和方法减少了抛光期间低k电介质材料和晶片划伤问题的分层问题。

公开(公告)号：US20070281853A1

公开(公告)日：2007-12-06

申请号：US11806533

申请日：2007-06-01

申请人： Chi-Yuan Lee ,  Shuo-Jen Lee ,  Chi-Wei Chung ,  Chi-Lei Hsieh ,  Guan-Wei Wu ,  Yu-Ming Lee

发明人： Chi-Yuan Lee ,  Shuo-Jen Lee ,  Chi-Wei Chung ,  Chi-Lei Hsieh ,  Guan-Wei Wu ,  Yu-Ming Lee

IPC分类号： H01M4/88 ,  B05D5/12

CPC分类号： H01M8/1097 ,  H01M8/1286 ,  Y02P70/56

摘要： This invention is to introduce a manufacturing method of fuel cell with integration of catalytic layer and micro sensors, which comprises following steps: manufacturing multi-hole silicon layer step, generating catalytic layer step, forming insulation layer step, integrating micro sensors step, and finalizing step. With the function of gas-diffusion layer in the multi-hole silicon wafer and multiple catalytic grains evenly spread over the inner walls of flow-way holes of the silicon wafer, a great catalytic layer can be formed effectively. Further, micro sensors properly are integrated. This invention's merits include simple structure and capabilities of simultaneously detecting temperature and humidity. Plus, it can heat up internally for a fuel cell.

摘要翻译： 本发明是介绍一种具有催化层和微型传感器一体化的燃料电池的制造方法，其包括以下步骤：制造多孔硅层步骤，产生催化层步骤，形成绝缘层步骤，集成微传感器步骤，最终确定 步。 通过多孔硅晶片中的气体扩散层的功能和多个催化颗粒均匀地分布在硅晶片的流通孔的内壁上，可以有效地形成大的催化层。 此外，微型传感器被整合。 本发明的优点包括同时检测温湿度的简单结构和能力。 另外，它可以内部加热燃料电池。