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公开(公告)号：US20050106872A1
公开(公告)日：2005-05-19
申请号：US10714985
申请日：2003-11-17
申请人： William Hong , Chia-Che Chuang , Chi-Wei Chung , Wen-Chih Chiou , Ying-Ho Chen , Syun-Ming Jang
发明人： William Hong , Chia-Che Chuang , Chi-Wei Chung , Wen-Chih Chiou , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B1/00 , H01L21/02 , H01L21/302 , H01L21/3105 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02074 , H01L21/02065 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.
摘要翻译： 公开了作为CMP工艺流程的一部分的氧化物抛光工艺。 在第一抛光站抛光铜层并且在第二抛光站抛光扩散阻挡层之后，在第三抛光工位上的键序列是施加第一氧化物浆料和第一DI水冲洗，然后是第二抛光 氧化物浆液，然后用第二次DI水冲洗。 因此，缺陷计数从几千减少到小于100.另一个重要因素是能够更有效地除去颗粒的低下降力。 改进的氧化物抛光方法具有与单一氧化物抛光剂和DI水漂洗方法相同的生产量，并且可以在任何三种浆料铜CMP工艺流程中实施。
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公开(公告)号：US07105446B2
公开(公告)日：2006-09-12
申请号：US10656585
申请日：2003-09-04
IPC分类号： B24B7/00
CPC分类号： B24B53/017 , B24B37/042 , B24B49/16
摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.
摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。
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公开(公告)号：US20050051266A1
公开(公告)日：2005-03-10
申请号：US10656585
申请日：2003-09-04
CPC分类号： B24B53/017 , B24B37/042 , B24B49/16
摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.
摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。
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公开(公告)号：US08021566B2
公开(公告)日：2011-09-20
申请号：US11497588
申请日：2006-08-02
IPC分类号： H01L21/302
CPC分类号： B24B53/017 , B24B37/042 , B24B49/16
摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.
摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。
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公开(公告)号：US20060270237A1
公开(公告)日：2006-11-30
申请号：US11497588
申请日：2006-08-02
IPC分类号： H01L21/461 , B24B7/00
CPC分类号： B24B53/017 , B24B37/042 , B24B49/16
摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.
摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。
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公开(公告)号：US06803310B2
公开(公告)日：2004-10-12
申请号：US10376309
申请日：2003-03-03
申请人： Yu-Piao Wang , Chia-Che Chuang
发明人： Yu-Piao Wang , Chia-Che Chuang
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L2221/1089
摘要： Perform an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on the barrier layer, wherein the atomic layer deposition comprises: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, is transported on the barrier layer; next, perform a purge/vacuum process; then a reactive gas, such as WF6, is transported to form the continuous metal seed layer (CMSL); the cycle step of the atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) about 20 to 40 Å.
摘要翻译： 执行原子层沉积（ALD）至少一次以在阻挡层上形成连续金属种子层（CMSL），其中原子层沉积包括：氢和硅烷如羟基硅烷或四羟基硅烷的混合气体是 在阻隔层上运送; 接下来，执行吹扫/真空过程; 然后将诸如WF6的反应气体输送以形成连续金属种子层（CMSL）; 可以重复原子层沉积（ALD）的循环步骤以形成约20至40的连续金属种子层（CMSL）的厚度。
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公开(公告)号：US06787461B2
公开(公告)日：2004-09-07
申请号：US10320473
申请日：2002-12-17
申请人： Yu-Piao Wang , Chia-Che Chuang
发明人： Yu-Piao Wang , Chia-Che Chuang
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L2221/1089
摘要： Perform an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on the barrier layer, wherein the atomic layer deposition comprises: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, is transported on the barrier layer; next, perform a purge/vacuum process; then a reactive gas, such as WF6, is transported to form the continuous metal seed layer (CMSL); the cycle step of the atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) about 20 to 40 Å.
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公开(公告)号：US06686278B2
公开(公告)日：2004-02-03
申请号：US09884799
申请日：2001-06-19
申请人： Yu-Piao Wang , Chia-Che Chuang
发明人： Yu-Piao Wang , Chia-Che Chuang
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L2221/1089
摘要： A method for forming a plug metal layer is disclosed and includes the following steps. Performance of an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on a barrier layer, wherein the atomic layer deposition comprise: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, being transported on the barrier layer. Next, performance of a purge/vacuum process. Then transporting a reactive gas, such as WF6, to form the continuous metal seed layer (CMSL). A subsequent cycle step of atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) to about 20 to 40 Å.
摘要翻译： 公开了一种形成插塞金属层的方法，包括以下步骤。 原子层沉积（ALD）的性能至少一次以在阻挡层上形成连续金属种子层（CMSL），其中原子层沉积包括：氢和硅烷的混合气体，例如羟基硅烷或四羟基硅烷， 在阻挡层上运输。 接下来，执行吹扫/真空过程。 然后输送诸如WF6的反应气体以形成连续的金属种子层（CMSL）。 可以重复原子层沉积（ALD）的随后的循环步骤以将连续金属种子层（CMSL）的厚度形成为约20至40埃。
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