Dopants for semiconducting materials
    1.
    发明授权
    Dopants for semiconducting materials 失效
    半导体材料掺杂剂

    公开(公告)号:US6156917A

    公开(公告)日:2000-12-05

    申请号:US889972

    申请日:1997-07-10

    IPC分类号: C07F7/10

    CPC分类号: C07F7/10

    摘要: A magnesium amide for use as a magnesium donor not having any Mg--C bonds. The compound is useful for doping GaN with Mg.sup.+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.

    摘要翻译: 用作不具有任何Mg-C键的镁供体的镁酰胺。 该化合物可用于以Mg + 2掺杂GaN。 本发明的化合物是高分子量二聚体,优选含有一个或多个硅取代基的二酰胺。 或者,本发明的化合物可以含有与Mg弱结合的氨基氮。 化合物必须具有足够的挥发性,可用于化学气相沉积。

    Dopants for semiconducting materials
    2.
    发明授权
    Dopants for semiconducting materials 失效
    半导体材料掺杂剂

    公开(公告)号:US06265597B1

    公开(公告)日:2001-07-24

    申请号:US09496792

    申请日:2000-02-02

    IPC分类号: C07F710

    CPC分类号: C07F7/10

    摘要: A magnesium amide for use as a magnesium donor not having any Mg—C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.

    摘要翻译: 用作不具有任何Mg-C键的镁供体的镁酰胺。 该化合物可用于以Mg + 2掺杂GaN。 本发明的化合物是高分子量二聚体,优选含有一个或多个硅取代基的二酰胺。 或者,本发明的化合物可以含有与Mg弱结合的氨基氮。 化合物必须具有足够的挥发性,可用于化学气相沉积。

    Metalorganic chemical vapor deposition method for depositing f-series
metal or nitrogen and metal amides for use in mocvd
    3.
    发明授权
    Metalorganic chemical vapor deposition method for depositing f-series metal or nitrogen and metal amides for use in mocvd 失效
    用于沉积f系列金属或氮和金属酰胺的金属有机化学气相沉积方法用于mocvd

    公开(公告)号:US5583205A

    公开(公告)日:1996-12-10

    申请号:US151500

    申请日:1993-11-12

    摘要: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

    摘要翻译: 一种用于在第II-VI族半导体材料中将F系列金属沉积到半导体或其它衬底上或用于掺入氮作为p型掺杂剂的金属有机化学气相沉积(MOCVD)方法。 MOCVD方法分别使用F系列金属酰胺或锌酰胺组合物作为F系列金属或氮的源化合物。 公开了新的铒酰胺和锌酰胺组合物以及制备金属酰胺组合物的方法。

    Lewis base adducts of decaborane for forming new preceramic polymers,
using as binders, forming shaped bodies and forming fibers
    4.
    发明授权
    Lewis base adducts of decaborane for forming new preceramic polymers, using as binders, forming shaped bodies and forming fibers 失效
    用于形成新的预陶瓷聚合物的十硼烷的路易斯碱加合物,用作粘合剂,形成成形体和形成纤维

    公开(公告)号:US4871826A

    公开(公告)日:1989-10-03

    申请号:US65224

    申请日:1987-06-22

    CPC分类号: C04B35/6325 C08G79/08

    摘要: New soluble preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine in an organic solvent are disclosed. Preferably the diamine has the formulaR.sup.1 R.sup.2 N-R.sup.3 -NR.sup.4 R.sup.5where R.sup.1, R.sup.2, R.sup.4 and R.sup.5 are H, a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, or a di- or triorganosilyl. R.sup.3 is a lower alkylene group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkylene group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenylene group having from 2 to about 8 carbon atoms, a substituted or unsubstituted lower arylene group having from 6 to about 10 carbon atoms, a substituted or unsubstituted polyarylene group, a heteroatom-containing alkylene group, a heteroatom-containing cycloalkylene group, a heteroatom-containing alkenylene group, or a heteroatom-containing arylene group.A method of using Lewis base adducts of decaborane of the formulaB.sub.10 H.sub.12-n R.sub.n.2L,where R and n are as defined above and L is any neutral Lewis base, can be used as binders for ceramic powders is also disclosed.And a method of using these Lewis base adducts as precursors in forming shaped ceramic bodies is also described.

    摘要翻译: 通过使B10H14-nRn(其中R是具有1至约8个碳原子的低级烷基,具有3至约8个碳原子的取代或未取代的环烷基),取代或未取代的低级链烯基 具有2至约8个碳原子,或具有6至约10个碳原子的取代或未取代的低级芳基,n为0至约6的数)。 优选地,二胺具有式R 1 R 2 N-R 3 -NR 4 R 5,其中R 1,R 2,R 4和R 5是H,具有1至约8个碳原子的低级烷基,取代或未取代的具有3至约8个碳原子的环烷基, 具有2至约8个碳原子的取代或未取代的低级链烯基,取代或未取代的具有6至约10个碳原子的低级芳基,或二 - 或三有机甲硅烷基。 R3是具有1至约8个碳原子的低级亚烷基,取代或未取代的具有3至约8个碳原子的亚环烷基,取代或未取代的具有2至约8个碳原子的低级亚烯基,取代或未取代的 具有6至约10个碳原子的低级亚芳基,取代或未取代的聚亚芳基,含杂原子的亚烷基,含杂原子的亚环烷基,含杂原子的亚烯基或含杂原子的亚芳基。 还公开了使用式B10H12-nRn.2L的十硼烷的路易斯碱加成物的方法,其中R和n如上所定义,L是任何中性路易斯碱,可用作陶瓷粉末的粘合剂。 还描述了在形成成形陶瓷体中使用这些路易斯碱加合物作为前体的方法。

    Bis(thiolate) compounds of group II metals
    5.
    发明授权
    Bis(thiolate) compounds of group II metals 失效
    II族金属的双(硫醇盐)化合物

    公开(公告)号:US5516945A

    公开(公告)日:1996-05-14

    申请号:US292369

    申请日:1994-08-18

    摘要: A new class of Group II bis(oligoetherthiolate) compounds is described for use in chemical vapor deposition processes in that it is volatile and soluble in common organic solvents, thereby rendering it suitable in the preparation of displays with full color, bright phosphors, which at present use ZnS-based technology. The drawback with ZnS is that the blue efficiency is too low. In another competing technology, MGa.sub.2 S.sub.4 -based materials, the sputtered films are amorphous, and the crystallization temperature is too high for inexpensive glass, thereby necessitating the use of expensive quartz. The instant invention secures the advantage of not depositing amorphous material in a two-step process. Rather a one-step process is used to get crystalline material directly, thereby providing a superior route to MGa.sub.2 S.sub.4 in that it has the potential to give higher quality films at reduced cost.

    摘要翻译: 描述了一类新的II类双(低聚硫醇硫酸酯)化合物用于化学气相沉积工艺,因为它是挥发性的并且可溶于常见的有机溶剂,从而使其适合制备具有全色,亮荧光体的显示器, 目前使用ZnS技术。 ZnS的缺点是蓝色效率太低。 在另一种竞争技术中,基于MGa2S4的材料,溅射膜是无定形的,并且结晶温度对于便宜的玻璃来说太高,因此需要使用昂贵的石英。 本发明确保了在两步法中不沉积无定形材料的优点。 相反,使用一步法直接获得结晶材料,从而为MGa2S4提供了优越的途径,因为它有可能以更低的成本提供更高质量的膜。

    Metalorganic chemical vapor deposition method for depositing F-series
metal or nitrogen and metal amides for use in MOCVD
    7.
    发明授权
    Metalorganic chemical vapor deposition method for depositing F-series metal or nitrogen and metal amides for use in MOCVD 失效
    用于沉积F系列金属或氮和金属酰胺用于MOCVD的金属有机化学气相沉积方法

    公开(公告)号:US5726294A

    公开(公告)日:1998-03-10

    申请号:US580766

    申请日:1995-12-29

    摘要: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

    摘要翻译: 一种用于在第II-VI族半导体材料中将F系列金属沉积到半导体或其它衬底上或用于掺入氮作为p型掺杂剂的金属有机化学气相沉积(MOCVD)方法。 MOCVD方法分别使用F系列金属酰胺或锌酰胺组合物作为F系列金属或氮的源化合物。 公开了新的铒酰胺和锌酰胺组合物以及制备金属酰胺组合物的方法。

    Lewis base adducts of decarborane for forming new preceramic polymers,
using as binders, forming shaped bodies and forming fibers
    8.
    发明授权
    Lewis base adducts of decarborane for forming new preceramic polymers, using as binders, forming shaped bodies and forming fibers 失效
    用于形成新的前陶瓷聚合物的脱脂硼烷的路易斯碱加合物,用作粘合剂,形成成形体和形成纤维

    公开(公告)号:US5026809A

    公开(公告)日:1991-06-25

    申请号:US361019

    申请日:1989-06-02

    IPC分类号: C04B35/632 C08G79/08

    CPC分类号: C04B35/6325 C08G79/08

    摘要: Preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine of the formulaR.sup.1 R.sup.2 N--(E).sub.q --NR.sup.4 R.sup.5,where R.sup.1, R.sup.2, R.sup.4 and R.sup.5 are H, a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cyloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, or a di- or triorganosilyl group and E is a substituted or unsubstituted heteroatom selected from the elements in Periodic Groups 2 through 15, lanthanide and actinide families, are soluble in organic solvents.

    摘要翻译: 通过使B10H14-nRn(其中R是具有1至约8个碳原子的低级烷基,具有3至约8个碳原子的取代或未取代的环烷基),取代或未取代的低级链烯基 2至约8个碳原子,或取代或未取代的具有6至约10个碳原子的低级芳基,n为0至约6的数))与式R 1 R 2 N-(E)q-NR 4 R 5的二胺反应, 其中R 1,R 2,R 4和R 5为H,具有1至约8个碳原子的低级烷基,取代或未取代的具有3至约8个碳原子的环烷基,取代或未取代的低级烯基, 约8个碳原子,取代或未取代的具有6至约10个碳原子的低级芳基,或二 - 或三有机甲硅烷基,E是取代或未取代的选自元素周期表第2至15族元素,镧系元素和锕系元素 e族,可溶于有机溶剂。