公开(公告)号：US09496036B1

公开(公告)日：2016-11-15

申请号：US14953447

申请日：2015-11-30

Applicant: Winbond Electronics Corp.

Inventor： Frederick Chen ,  Ping-Kun Wang ,  Shao-Ching Liao ,  Pei-Hsiang Liao

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/16

CPC classification number: G11C11/1653 ,  G11C11/1655 ,  G11C11/1657 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/79 ,  G11C2213/82

Abstract: A writing method for a resistive memory cell and a resistive memory are provided. The writing method includes following steps. A reference voltage is provided to a bit line of the resistive memory cell. A first voltage is provided to a word line of the resistive memory cell, and a second voltage is provided to a source line of the resistive memory cell, wherein the first voltage is not increased while the second voltage is progressively increased. Thus, when the writing method for the resistive memory cell is performed, the voltage of the word line is not increased while the voltage of the source line is progressively increased, so as to expand voltage window for reset operation. And, the chance for occurring the complementary switching manifestation of the resistive memory cell due to excessive input voltages is reduced.

Abstract translation: 提供了一种用于电阻式存储单元和电阻式存储器的写入方法。 写作方法包括以下步骤。 参考电压被提供给电阻存储单元的位线。 第一电压被提供给电阻存储单元的字线，并且第二电压被提供给电阻存储单元的源极线，其中第一电压不增加，而第二电压逐渐增加。 因此，当执行电阻性存储单元的写入方法时，在线源的电压逐渐增加的同时，字线的电压不增加，从而扩大用于复位操作的电压窗口。 并且，由于过大的输入电压而发生电阻式存储单元的互补切换表现的机会降低。