Micromechanical semiconductor sensor
    4.
    发明授权
    Micromechanical semiconductor sensor 有权
    微机电半导体传感器

    公开(公告)号:US07843025B2

    公开(公告)日:2010-11-30

    申请号:US12359904

    申请日:2009-01-26

    IPC分类号: H01L21/00

    摘要: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

    摘要翻译: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域,第一区域具有第一掺杂。 此外,提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外,使用施加在稳定元件上的第一外延层,在第一区域上方产生膜。 在另一方法步骤中,第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式,本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT, AS WELL AS A SEMICONDUCTOR COMPONENT, IN PARTICULAR A MEMBRANE SENSOR
    7.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT, AS WELL AS A SEMICONDUCTOR COMPONENT, IN PARTICULAR A MEMBRANE SENSOR 有权
    制造半导体元件的方法,作为半导体元件,特别是膜传感器

    公开(公告)号:US20090127640A1

    公开(公告)日:2009-05-21

    申请号:US12359904

    申请日:2009-01-26

    IPC分类号: H01L29/84 H01L21/3213

    摘要: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

    摘要翻译: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域,第一区域具有第一掺杂。 此外,提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外,使用施加在稳定元件上的第一外延层,在第一区域上方产生膜。 在另一方法步骤中,第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式,本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

    Micromechanical component and pressure sensor having a component of this type
    10.
    发明授权
    Micromechanical component and pressure sensor having a component of this type 失效
    具有这种组件的微机械部件和压力传感器

    公开(公告)号:US06840111B2

    公开(公告)日:2005-01-11

    申请号:US10433541

    申请日:2002-09-29

    IPC分类号: G01L9/00 H01L29/84 G01L7/06

    CPC分类号: G01L9/0052

    摘要: A micromechanical component in which lateral deformations, i.e., deformations of the component parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component. The component structure includes at least one bellows-like structure in which lateral deformations of the component are concentrated. A pressure sensor having a micromechanical component of this type may be used, for example, for measured-value detection.

    摘要翻译: 其中侧向变形(即,与其两个主表面平行的部件的变形)集中在部件结构的限定区域中的微机械部件,使得可以使部件中的横向和垂直应力解耦。 部件结构包括至少一个波纹管状结构,其中部件的侧向变形被集中。 可以使用具有这种类型的微机械部件的压力传感器,例如用于测量值检测。