利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.022 秒)

    Vertically emitting optically pumped diode laser with external resonator
    5.
    发明授权
    Vertically emitting optically pumped diode laser with external resonator 有权
    用外部谐振器垂直发射光泵浦二极管激光器

    公开(公告)号：US07522646B2

    公开(公告)日：2009-04-21

    申请号：US10745378

    申请日：2003-12-22

    申请人： Peter Brick ,  Stephan Lutgen ,  Norbert Linder

    发明人： Peter Brick ,  Stephan Lutgen ,  Norbert Linder

    IPC分类号： H01S5/00

    CPC分类号： H01S5/183 ,  H01S5/028 ,  H01S5/041 ,  H01S5/141

    摘要： A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for irradiating into the active zone at an incidence angle αp pumping radiation (10) of wavelength λp. The wavelength λp and the incidence angle αp of the pumping radiation are selected in such a way that the absorption of the pumping radiation takes place substantially inside the quantum wells. This avoids the losses during the capture of charge carriers from the barrier layers into the quantum wells that occur in the case of optically pumped semiconductor lasers where the pumping radiation is absorbed in the barrier layers. Also specified are advantageous refinements of the semiconductor body and combinations for incidence angle and wavelength of the pumping radiation source that permit a particularly effective optical pumping process of the quantum wells.

    摘要翻译： 一种具有外部谐振器的垂直发射半导体激光器，其中量子阱结构（4）位于其中的量子阱（6）和位于其间的阻挡层（5）的有源区的半导体本体（1）和至少一个 泵浦辐射源（9），用于以波长兰波特的入射角alphap泵浦辐射（10）照射到有源区域中。 泵浦辐射的波长羔羊和入射角alphap以这样的方式选择，使得泵浦辐射的吸收基本上在量子阱内部发生。 这避免了在从泵浦辐射被吸收在阻挡层中的光泵浦半导体激光器的情况下，从阻挡层捕获到电荷载流子到量子阱期间的损耗。 还规定了半导体主体的有利改进以及允许量子阱的特别有效的光泵浦过程的泵浦辐射源的入射角和波长的组合。

    Optically pumped semiconductor laser device
    6.
    发明授权
    Optically pumped semiconductor laser device 有权
    光泵浦半导体激光器件

    公开(公告)号：US07408972B2

    公开(公告)日：2008-08-05

    申请号：US10579519

    申请日：2004-11-09

    申请人： Wolfgang Schmid ,  Peter Brick ,  Stephan Lutgen ,  Tony Albrecht ,  Franz Eberhard

    发明人： Wolfgang Schmid ,  Peter Brick ,  Stephan Lutgen ,  Tony Albrecht ,  Franz Eberhard

    IPC分类号： H01S3/091 ,  H01S3/08

    CPC分类号： H01S5/183 ,  H01H13/705 ,  H01H13/86 ,  H01H2209/07 ,  H01H2223/008 ,  H01H2223/034 ,  H01H2239/032 ,  H01H2239/034 ,  H01H2239/038 ,  H01S3/094084 ,  H01S5/026 ,  H01S5/041 ,  H01S5/101 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/4031 ,  H01S5/4056

    摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.

    摘要翻译： 一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。 半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。 该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

    OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE
    7.
    发明申请
    OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE 有权
    光学泵浦半导体激光器件

    公开(公告)号：US20070201531A1

    公开(公告)日：2007-08-30

    申请号：US10579519

    申请日：2004-11-09

    申请人： Wolfgang Schmid ,  Peter Brick ,  Stephan Lutgen ,  Tony Albrecht ,  Franz Eberhard

    发明人： Wolfgang Schmid ,  Peter Brick ,  Stephan Lutgen ,  Tony Albrecht ,  Franz Eberhard

    IPC分类号： H01S3/093 ,  H01S3/081

    CPC分类号： H01S5/183 ,  H01H13/705 ,  H01H13/86 ,  H01H2209/07 ,  H01H2223/008 ,  H01H2223/034 ,  H01H2239/032 ,  H01H2239/034 ,  H01H2239/038 ,  H01S3/094084 ,  H01S5/026 ,  H01S5/041 ,  H01S5/101 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/4031 ,  H01S5/4056

    摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.

    摘要翻译： 一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。 半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。 该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

    Optoelectronic semiconductor element
    9.
    发明授权
    Optoelectronic semiconductor element 有权
    光电半导体元件

    公开(公告)号：US08351479B2

    公开(公告)日：2013-01-08

    申请号：US12293057

    申请日：2007-03-15

    申请人： Stephan Lutgen ,  Peter Brick ,  Tony Albrecht

    发明人： Stephan Lutgen ,  Peter Brick ,  Tony Albrecht

    IPC分类号： H01S5/183 ,  H01S5/026 ,  H01S5/04

    CPC分类号： H01S5/18388 ,  H01S3/108 ,  H01S3/109 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/227 ,  H01S5/4025 ,  H01S5/4031

    摘要： An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

    摘要翻译： 光电子半导体部件具有包括发射垂直发射极区域（2）的表面的半导体本体（1），所述表面发射垂直发射极区域包括垂直发射极层（3），设置用于光学泵浦垂直发射极层（3）的至少一个泵浦源（4） 和在垂直发射极层中产生的电磁辐射（31）离开半导体本体（1）的辐射通道区域（26），其中泵浦源（4）和垂直发射极层（3）距离一个距离 另一个在垂直方向。

    Method for production of a plurality of semiconductor chips, and a semiconductor component
    10.
    发明授权
    Method for production of a plurality of semiconductor chips, and a semiconductor component 有权
    用于制造多个半导体芯片的方法以及半导体部件

    公开(公告)号：US08178372B2

    公开(公告)日：2012-05-15

    申请号：US11541132

    申请日：2006-09-28

    申请人： Stephan Lutgen ,  Tony Albrecht ,  Wolfgang Reill

    发明人： Stephan Lutgen ,  Tony Albrecht ,  Wolfgang Reill

    IPC分类号： H01L21/78

    CPC分类号： H01S5/0425 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/641 ,  H01L2924/0002 ,  H01S5/02 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02476 ,  H01S5/041 ,  H01S5/14 ,  H01L2924/00

    摘要： A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).

    摘要翻译： 一种用于在晶片复合材料中制造多个半导体芯片（6）的方法。 在生长衬底（1）上生长半导体层序列（2），向半导体层序列（2）施加金属化（3），金属层（4）电化学沉积到金属化层（3）上， 半导体层序列（2）然后被构造和分离以形成单独的半导体芯片（6）。 电化学施加的金属层（4）特别适合用作散热器，用于散发由半导体芯片（6）产生的热量。