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1.发明授权公开(公告)号：US07754586B2
公开(公告)日：2010-07-13
申请号：US11907472
申请日：2007-10-12
IPC分类号： H01L21/322
CPC分类号： H01L45/1683 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616
摘要： A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.
摘要翻译： 表面处理相变层的方法可以包括在形成相变层之前，在要形成相变层的底层的表面上形成涂层，其中所述涂层具有用于 有助于将烷基粘附到底层的表面。 在形成涂层之后，可以使用原子层沉积（ALD）方法形成相变层。
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2.发明申请公开(公告)号：US20080090326A1
公开(公告)日：2008-04-17
申请号：US11907472
申请日：2007-10-12
IPC分类号： H01L45/00
CPC分类号： H01L45/1683 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616
摘要： A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.
摘要翻译： 表面处理相变层的方法可以包括在形成相变层之前，在要形成相变层的底层的表面上形成涂层，其中所述涂层具有用于 有助于将烷基粘附到底层的表面。 在形成涂层之后，可以使用原子层沉积（ALD）方法形成相变层。
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3.发明授权Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权包含纳米颗粒复合材料的电荷阱存储器件和制造电荷陷阱存储器件的方法公开(公告)号：US07482619B2
公开(公告)日：2009-01-27
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： H01L29/06 , H01L31/00 , H01L29/788
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译： 提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。
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公开(公告)号：US20060238103A1
公开(公告)日：2006-10-26
申请号：US11405555
申请日：2006-04-18
申请人： Jae-young Choi , Byung-ki Kim , Seoung-jae Im , Eun-sung Lee , Kyung-sang Cho , Eun-Joo Jang
发明人： Jae-young Choi , Byung-ki Kim , Seoung-jae Im , Eun-sung Lee , Kyung-sang Cho , Eun-Joo Jang
IPC分类号： H01J1/62
CPC分类号： B82Y20/00 , G02F1/133617 , G02F2202/36
摘要： Provided is a photo-luminescence (PL) LCD including: electrodes that are disposed on bottom and top surfaces of front and rear substrate and create an electric field in liquid crystals (LCs); a nano-dot (ND) PL layer that is disposed on the bottom surface of the front substrate and emits light when irradiated with ultraviolet (UV) light, and a UV backlight unit that is located behind the rear substrate and supplying UV light to the ND PL layer. The UV backlight unit is excited by blue UV light having a wavelength range of 360 to 460 nm to emit light. The PD LCD having the above-mentioned structure suppresses absorption of UV light by LC and degradation of the LC while providing high light efficiency.
摘要翻译： 提供了一种光发光（PL）LCD，包括：设置在前基板和后基板的底表面和顶表面上并在液晶（LC）中产生电场的电极; 一个纳米点（ND）PL层，其设置在前基板的底表面上，并且在用紫外线（UV）光照射时发出光;以及UV背光单元，其位于后基板的后面，并将UV光提供给 ND PL层。 UV背光单元由具有360至460nm波长范围的蓝色UV光激发，以发光。 具有上述结构的PD LCD通过LC抑制UV光的吸收和LC的降低，同时提供高的光效。
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5.发明申请Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权包含纳米颗粒复合物的电荷阱存储器件和制造电荷陷阱存储器件的方法公开(公告)号：US20070064468A1
公开(公告)日：2007-03-22
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： G11C11/00
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译： 提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。
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公开(公告)号：US09713794B2
公开(公告)日：2017-07-25
申请号：US13443489
申请日：2012-04-10
申请人： Jae-young Choi , Ho-bum Park
发明人： Jae-young Choi , Ho-bum Park
IPC分类号： B01D71/00 , B01D53/00 , B01D67/00 , B01D69/10 , C02F1/00 , B01D71/02 , B01D53/22 , C02F1/44 , C02F103/08
CPC分类号： B01D71/021 , B01D53/228 , B01D67/0067 , B01D69/10 , B01D2325/04 , B01D2325/20 , C02F1/441 , C02F2103/08 , Y02A20/131
摘要： According to example embodiments, a separation membrane includes a graphene on at least one surface of a polymer support. The graphene may include a plurality of grains defined by grain boundaries.
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7.发明授权Method of selectively growing semiconductor carbon nanotubes using light irradiation 有权使用光照射选择性生长半导体碳纳米管的方法公开(公告)号：US08759199B2
公开(公告)日：2014-06-24
申请号：US12879087
申请日：2010-09-10
申请人： Won-mook Choi , Jae-young Choi , Jin Zhang , Guo Hong
发明人： Won-mook Choi , Jae-young Choi , Jin Zhang , Guo Hong
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/22
摘要： A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes.
摘要翻译： 使用光照射选择性地生长多个半导体碳纳米管的方法。 该方法包括在衬底上设置包括催化剂材料的多个纳米点; 从多个纳米点生长多个碳纳米管，并将光照射到纳米点上以选择性地生长多个半导体碳纳米管。
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8.发明授权Reduced graphene oxide doped with dopant, thin layer and transparent electrode 有权掺杂有掺杂剂，薄层和透明电极的氧化还原石墨烯公开(公告)号：US08715532B2
公开(公告)日：2014-05-06
申请号：US12171551
申请日：2008-07-11
申请人： Hyeon-jin Shin , Jae-young Choi , Seon-mi Yoon
发明人： Hyeon-jin Shin , Jae-young Choi , Seon-mi Yoon
CPC分类号： H01G9/2022 , B82Y30/00 , B82Y40/00 , C01B32/192 , C01B2204/22 , H01G9/2031 , H01L51/442 , H01L51/5206 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.
摘要翻译： 本文公开了掺杂有掺杂剂的还原型石墨烯氧化物，以及薄层，透明电极，显示装置和包含还原型石墨烯氧化物的太阳能电池。 掺杂有掺杂剂的还原型石墨烯氧化物包括有机掺杂剂和/或无机掺杂剂。
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公开(公告)号：US08507895B2
公开(公告)日：2013-08-13
申请号：US12855724
申请日：2010-08-13
申请人： Jae-young Choi , Won-mook Choi
发明人： Jae-young Choi , Won-mook Choi
IPC分类号： H01L29/08
CPC分类号： H01L51/5206
摘要： An organic light emitting device including graphene. The organic light emitting device includes a first electrode that is interposed between a transparent substrate and an organic layer emitting light, and includes graphene having a thickness of about 0.1 nanometer (nm) to about 10 nanometers (nm).
摘要翻译： 包括石墨烯的有机发光器件。 有机发光器件包括插入在透明基板和发光的有机层之间的第一电极，并且包括具有约0.1纳米（nm）至约10纳米（nm）的厚度的石墨烯。
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公开(公告)号：US08492747B2
公开(公告)日：2013-07-23
申请号：US12911316
申请日：2010-10-25
申请人： Jae-young Choi , Hyeon-jin Shin , Seon-mi Yoon , Won-mook Choi
发明人： Jae-young Choi , Hyeon-jin Shin , Seon-mi Yoon , Won-mook Choi
IPC分类号： H01L29/66
CPC分类号： H01L29/78696 , H01L29/78684
摘要： A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer.
摘要翻译： 晶体管包括至少三个端子，包括栅电极，源电极和漏电极，设置在基板上的绝缘层和设置在基板上的半导体层，其中在源电极和漏极之间流动的电流 通过向栅电极施加电压来控制，其中半导体层包括石墨烯层和金属原子层和金属离子层中的至少一个，并且其中金属原子层或金属离子层介于 石墨烯层和绝缘层。
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