DISPLAY PANEL AND DISPLAY TERMINAL
    4.
    发明公开

    公开(公告)号:US20240152010A1

    公开(公告)日:2024-05-09

    申请号:US17776384

    申请日:2022-04-13

    IPC分类号: G02F1/1362 G02F1/1368

    摘要: Embodiments of the present disclosure provide a display panel and a display terminal. The display panel includes at least one ultraviolet sensing transistor and at least one control transistor disposed on a substrate, and a color film substrate including a light blocking unit; wherein the ultraviolet sensing transistor includes an ultraviolet absorbing layer, and an orthographic projection of the light blocking unit on the substrate covers an orthographic projection of the ultraviolet absorbing layer on the substrate. According to the embodiment of the present disclosure, the light blocking unit absorbs or blocks the visible lights to prevent the visible lights from entering into the ultraviolet absorbing layer.

    ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE

    公开(公告)号:US20230354624A1

    公开(公告)日:2023-11-02

    申请号:US17278694

    申请日:2021-02-26

    IPC分类号: H10K30/80 H10K39/32

    摘要: An array substrate, a display panel, and a display device are provided by the present application. The array substrate includes a base substrate; a light-sensitive component layer disposed on the base substrate, wherein a plurality of light-sensitive components are disposed at intervals in the light-sensitive component layer; and a first light-shielding layer disposed on the light-sensitive component layer. An orthographic projection of the first light-shielding layer on the base substrate partially overlaps with an orthographic projection of each of the light-sensitive components on the array substrate.

    PHOTO SENSOR, MANUFACTURING METHOD THEREOF, AND DISPLAY PANEL

    公开(公告)号:US20220122370A1

    公开(公告)日:2022-04-21

    申请号:US16956962

    申请日:2020-04-02

    IPC分类号: G06V40/13 H01L27/146

    摘要: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.