METHOD FOR MAKING SEMICONDUCTING CARBON NANOTUBES
    2.
    发明申请
    METHOD FOR MAKING SEMICONDUCTING CARBON NANOTUBES 有权
    制备半导体碳纳米管的方法

    公开(公告)号:US20110305625A1

    公开(公告)日:2011-12-15

    申请号:US12952536

    申请日:2010-11-23

    IPC分类号: D01F9/12 B82Y99/00

    摘要: A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.

    摘要翻译: 提供制造半导体碳纳米管的方法。 催化剂前体设置在基板上。 催化剂前体包括血液。 血液中含有的有机物被除去,血液中含有的铁离子被氧化,在基底上产生离散的三氧化二铁纳米粒子。 还原氧化亚铁纳米颗粒以在基底上产生分离的铁纳米颗粒。 然后碳纳米管在铁纳米颗粒上生长。

    MICRO HEATER
    3.
    发明申请
    MICRO HEATER 有权
    微加热器

    公开(公告)号:US20120125915A1

    公开(公告)日:2012-05-24

    申请号:US12981575

    申请日:2010-12-30

    IPC分类号: H05B3/10

    CPC分类号: H05B3/145 H05B2214/04

    摘要: A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.

    摘要翻译: 微加热器包括第一电极,第二电极,第一碳纳米管和第二碳纳米管。 第一碳纳米管从第一电极延伸。 第二碳纳米管从第二电极分支。 第一碳纳米管和第二碳纳米管彼此交叉以在其间限定一个节点。

    METHOD FOR FORMING RECESS DEFECT ON CARBON NANOTUBE
    5.
    发明申请
    METHOD FOR FORMING RECESS DEFECT ON CARBON NANOTUBE 有权
    在碳纳米管上形成记忆缺陷的方法

    公开(公告)号:US20120168402A1

    公开(公告)日:2012-07-05

    申请号:US13335925

    申请日:2011-12-22

    IPC分类号: B32B1/08 B82Y40/00

    摘要: A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position.

    摘要翻译: 引入了在碳纳米管上形成凹陷缺陷的方法。 该方法包括以下步骤。 提供具有表面的基板。 第一碳纳米管被放置在衬底的表面上。 第二碳纳米管与第一碳纳米管交叉。 第二碳纳米管与第一碳纳米管交叉并与第一碳纳米管接触。 掩模沉积在基底,第一碳纳米管和第二碳纳米管上。 蚀刻基板以除去第二碳纳米管,并在交叉位置在第一碳纳米管上形成凹陷缺陷。