利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

71 条记录 (耗时 0.024 秒)

    MICRO HEATER
    1.
    发明申请
    MICRO HEATER 有权
    微加热器

    公开(公告)号：US20120125915A1

    公开(公告)日：2012-05-24

    申请号：US12981575

    申请日：2010-12-30

    申请人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： H05B3/10

    CPC分类号： H05B3/145 ,  H05B2214/04

    摘要： A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.

    摘要翻译： 微加热器包括第一电极，第二电极，第一碳纳米管和第二碳纳米管。 第一碳纳米管从第一电极延伸。 第二碳纳米管从第二电极分支。 第一碳纳米管和第二碳纳米管彼此交叉以在其间限定一个节点。

    METHOD FOR MAKING SEMICONDUCTING CARBON NANOTUBES
    3.
    发明申请
    METHOD FOR MAKING SEMICONDUCTING CARBON NANOTUBES 有权
    制备半导体碳纳米管的方法

    公开(公告)号：US20110305625A1

    公开(公告)日：2011-12-15

    申请号：US12952536

    申请日：2010-11-23

    申请人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： D01F9/12 ,  B82Y99/00

    CPC分类号： B82Y40/00 ,  B01J23/745 ,  B01J35/0013 ,  B01J37/08 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/22 ,  Y10S977/742 ,  Y10S977/842

    摘要： A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.

    摘要翻译： 提供制造半导体碳纳米管的方法。 催化剂前体设置在基板上。 催化剂前体包括血液。 血液中含有的有机物被除去，血液中含有的铁离子被氧化，在基底上产生离散的三氧化二铁纳米粒子。 还原氧化亚铁纳米颗粒以在基底上产生分离的铁纳米颗粒。 然后碳纳米管在铁纳米颗粒上生长。

    METHOD FOR FORMING RECESS DEFECT ON CARBON NANOTUBE
    4.
    发明申请
    METHOD FOR FORMING RECESS DEFECT ON CARBON NANOTUBE 有权
    在碳纳米管上形成记忆缺陷的方法

    公开(公告)号：US20120168402A1

    公开(公告)日：2012-07-05

    申请号：US13335925

    申请日：2011-12-22

    申请人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： XUE-SHEN WANG ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： B32B1/08 ,  B82Y40/00

    CPC分类号： B82Y30/00 ,  B81C1/00063 ,  B82Y40/00

    摘要： A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position.

    摘要翻译： 引入了在碳纳米管上形成凹陷缺陷的方法。 该方法包括以下步骤。 提供具有表面的基板。 第一碳纳米管被放置在衬底的表面上。 第二碳纳米管与第一碳纳米管交叉。 第二碳纳米管与第一碳纳米管交叉并与第一碳纳米管接触。 掩模沉积在基底，第一碳纳米管和第二碳纳米管上。 蚀刻基板以除去第二碳纳米管，并在交叉位置在第一碳纳米管上形成凹陷缺陷。

    LIGHT EMITTING DIODE
    6.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130140593A1

    公开(公告)日：2013-06-06

    申请号：US13477273

    申请日：2012-05-22

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    IPC分类号： H01L33/60 ,  H01L33/62

    CPC分类号： H01L33/24 ,  H01L33/32

    摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面是M形的。

    LIGHT EMITTING DIODE
    7.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130140519A1

    公开(公告)日：2013-06-06

    申请号：US13479227

    申请日：2012-05-23

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    IPC分类号： H01L33/06 ,  B82Y20/00

    CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22

    摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.

    摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层依次堆叠在第二表面上，并且远离有源层的第二半导体层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

    LIGHT EMITTING DIODE
    8.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130087820A1

    公开(公告)日：2013-04-11

    申请号：US13340661

    申请日：2011-12-29

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/382 ,  H01L33/405

    摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供发光二极管。 发光二极管包括第一半导体层，有源层，第二半导体层，第一电极和第二电极。 有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是LED的光提取表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在LED的光提取面上形成多个三维纳米结构，三维纳米结构的数量并排排列，每个三维纳米结构的截面为M- 成形。

    LIGHT EMITTING DIODE
    9.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130087819A1

    公开(公告)日：2013-04-11

    申请号：US13340643

    申请日：2011-12-29

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/60 ,  H01L33/36

    CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L33/405

    摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供发光二极管。 发光二极管包括第一半导体层，有源层和第二半导体层。 有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在发光面上形成多个三维纳米结构。 三维纳米结构的数量并排排列，三维纳米结构的截面为M形。

    ELASTIC DEVICE USING CARBON NANOTUBE FILM
    10.
    发明申请
    ELASTIC DEVICE USING CARBON NANOTUBE FILM 有权
    使用碳纳米管膜的弹性装置

    公开(公告)号：US20120202050A1

    公开(公告)日：2012-08-09

    申请号：US13450737

    申请日：2012-04-19

    申请人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

    发明人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

    IPC分类号： B32B9/00 ,  B82Y30/00

    CPC分类号： G06F3/045 ,  B82Y30/00 ,  Y10T428/26 ,  Y10T428/30

    摘要： An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of first carbon nanotubes orientated primarily along a first direction and a plurality of second carbon nanotubes having orientations different from the first direction. At least one portion of each of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction.

    摘要翻译： 弹性装置包括第一弹性支撑件; 第二弹性支撑体和碳纳米管膜。 第二弹性支撑件与第一弹性支撑件间隔开。 碳纳米管膜具有固定在第一弹性支撑体上的第一侧和与第一侧相反的第二侧并且固定在第二弹性支撑体上。 碳纳米管膜包括主要沿着第一方向取向的多个第一碳纳米管和具有与第一方向不同的取向的多个第二碳纳米管。 每个第二碳纳米管的至少一部分与至少两个相邻的第一碳纳米管接触。 碳纳米管膜能够沿着与第一方向基本垂直的第二方向弹性变形。