公开(公告)号：US11217732B2

公开(公告)日：2022-01-04

申请号：US16810523

申请日：2020-03-05

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Senpeng Huang ,  Junpeng Shi ,  Weng-Tack Wong ,  Shunyi Chen ,  Zhenduan Lin ,  Chih-Wei Chao ,  Chen-Ke Hsu

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λmax) is the maximum light intensity within 380-780 nm, S(λmax) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λmax)−S(W)/S(λmax), −0.15

公开(公告)号：US11462517B2

公开(公告)日：2022-10-04

申请号：US16899413

申请日：2020-06-11

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Ping Zhang ,  Junpeng Shi ,  Senpeng Huang ,  Zhen-duan Lin ,  Shunyi Chen ,  Chen-ke Hsu

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.