Flip-chip light emitting diode and fabrication method
    3.
    发明授权
    Flip-chip light emitting diode and fabrication method 有权
    倒装芯片发光二极管及其制作方法

    公开(公告)号:US09219194B2

    公开(公告)日:2015-12-22

    申请号:US14588087

    申请日:2014-12-31

    Abstract: A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.

    Abstract translation: 倒装LED包括具有p区域金属部分的表面和分离的n区域金属部分的基板; p型外延层,有源层和n型外延层,依次层压在基板上; 在所述衬底和所述p型外延层之间的反射层; 反射层和p型外延层之间的电流阻挡层,并被定位成防止电流集中在LED的边缘上; 绝缘保护层包覆LED侧壁并暴露n型外延层的侧壁的一部分; 连接所述金属反射层和所述基板的p区域金属部的P电极; 以及连接n型外延层的侧壁和基板的n区金属部分的N电极。

    Light-emitting diode filament structure and LED lighting lamp including the same

    公开(公告)号:US11538965B2

    公开(公告)日:2022-12-27

    申请号:US16948441

    申请日:2020-09-18

    Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

    White light LED package structure and white light source system

    公开(公告)号:US11217732B2

    公开(公告)日:2022-01-04

    申请号:US16810523

    申请日:2020-03-05

    Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λmax) is the maximum light intensity within 380-780 nm, S(λmax) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λmax)−S(W)/S(λmax), −0.15

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