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    HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
    1.
    发明授权
    HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance 失效
    HDP-CVD调味工艺为高功率HDP-CVD gapfil提高了颗粒性能

    公开(公告)号：US07109114B2

    公开(公告)日：2006-09-19

    申请号：US10841582

    申请日：2004-05-07

    申请人： Xiaolin Chen ,  Jason Bloking

    发明人： Xiaolin Chen ,  Jason Bloking

    IPC分类号： H01L21/44

    CPC分类号： H01L21/02164 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

    摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

    摘要翻译： 一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅 在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。 另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有 具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

    HDP-CVD SEASONING PROCESS FOR HIGH POWER HDP-CVD GAPFIL TO IMPROVE PARTICLE PERFORMANCE
    2.
    发明申请
    HDP-CVD SEASONING PROCESS FOR HIGH POWER HDP-CVD GAPFIL TO IMPROVE PARTICLE PERFORMANCE 审中-公开
    用于高功率HDP-CVD GAPFIL以提高颗粒性能的HDP-CVD季节性过程

    公开(公告)号：US20060219169A1

    公开(公告)日：2006-10-05

    申请号：US11422858

    申请日：2006-06-07

    申请人： Xiaolin Chen ,  Jason Bloking

    发明人： Xiaolin Chen ,  Jason Bloking

    IPC分类号： B05C11/00 ,  C23C16/00

    CPC分类号： H01L21/02164 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

    摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

    摘要翻译： 一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅 在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。 另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有 具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

    HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
    3.
    发明申请
    HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance 失效
    HDP-CVD调味工艺为高功率HDP-CVD gapfil提高了颗粒性能

    公开(公告)号：US20050250340A1

    公开(公告)日：2005-11-10

    申请号：US10841582

    申请日：2004-05-07

    申请人： Xiaolin Chen ,  Jason Bloking

    发明人： Xiaolin Chen ,  Jason Bloking

    IPC分类号： C23C16/44 ,  H01L21/31 ,  H01L21/316

    CPC分类号： H01L21/02164 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

    摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

    摘要翻译： 一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅 在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。 另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有 具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

    Magnetic-field concentration in inductively coupled plasma reactors
    6.
    发明申请
    Magnetic-field concentration in inductively coupled plasma reactors 审中-公开
    电感耦合等离子体反应堆中的磁场浓度

    公开(公告)号：US20060075967A1

    公开(公告)日：2006-04-13

    申请号：US10963030

    申请日：2004-10-12

    申请人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

    发明人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

    IPC分类号： H01L21/20 ,  C23C16/00

    CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/401 ,  C23C16/507 ,  H05B6/26

    摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

    摘要翻译： 衬底处理系统设置有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。 气体输送系统构造成将气体引入处理室。 提供压力控制系统以保持处理室内的选定压力。 高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。 它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。 还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

    Two-piece dome with separate RF coils for inductively coupled plasma reactors
    7.
    发明申请
    Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
    具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶

    公开(公告)号：US20070037397A1

    公开(公告)日：2007-02-15

    申请号：US11202043

    申请日：2005-08-11

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

    IPC分类号： H01L21/302

    CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

    摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

    摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

    Inductive plasma system with sidewall magnet
    8.
    发明申请
    Inductive plasma system with sidewall magnet 审中-公开
    具有侧壁磁铁的感应等离子体系统

    公开(公告)号：US20060177600A1

    公开(公告)日：2006-08-10

    申请号：US11053363

    申请日：2005-02-08

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

    IPC分类号： H05H1/02 ,  C23C16/00 ,  H05H1/46

    CPC分类号： H01J37/32688 ,  H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate within a substrate plane during substrate processing. A gas-delivery system is configured to introduce a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber. A magnetic confinement ring with magnetic dipoles is disposed circumferentially around a symmetry axis orthogonal to the substrate plane and provides a magnetic field with a net dipole moment substantially nonparallel with the substrate plane. A controller controls the gas-delivery system, the pressure-control system, and the high-density plasma system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间将衬底支撑在衬底平面内。 气体输送系统构造成将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体产生系统与处理室可操作地耦合。 具有磁偶极子的磁约束环周围围绕与基板平面正交的对称轴设置，并提供具有与基板平面基本上不平行的净偶极矩的磁场。 控制器控制气体输送系统，压力控制系统和高密度等离子体系统。