公开(公告)号：US20120190178A1

公开(公告)日：2012-07-26

申请号：US13089966

申请日：2011-04-19

申请人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

发明人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

IPC分类号： H01L21/20 ,  H01L21/3205

CPC分类号： H01L21/0262 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/28556

摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.

摘要翻译： 描述形成多晶硅层的方法。 所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。 所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。 偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。 当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

公开(公告)号：US20110188867A1

公开(公告)日：2011-08-04

申请号：US12978244

申请日：2010-12-23

申请人： Huiping Li ,  Xiaolin Chen ,  Fan Chen ,  Fahua Lan ,  Kevin Dapend Zhang

发明人： Huiping Li ,  Xiaolin Chen ,  Fan Chen ,  Fahua Lan ,  Kevin Dapend Zhang

IPC分类号： H04B10/04

摘要： A phase shift keyed demodulator includes first and second beam splitters, a first optical path, a second optical path, and a wavelength tuner. The first beam splitter splits an input signal into first and second output signals. The second beam splitter splits each first and second output signal into a transmitted signal and a reflected signal. The first optical path includes an optical path of each transmitted signal from a beam splitting surface to a reflector and back to the beam splitting surface. The second optical path includes an optical path of each reflected signal from the beam splitting surface to a mirror surface and back to the beam splitting surface. A path difference introduces a delay between the transmitted signal and the reflected signal. The wavelength tuner tunes the demodulator to a predetermined central wavelength and introduces a phase shift between first and second transmitted signals.

摘要翻译： 相移键控解调器包括第一和第二分束器，第一光路，第二光路和波长调谐器。 第一分束器将输入信号分成第一和第二输出信号。 第二分束器将每个第一和第二输出信号分离成发射信号和反射信号。 第一光路包括从分束表面到反射器的每个发射信号的光路，并且返回到分束表面。 第二光路包括从分束表面到镜面并且返回到分束表面的每个反射信号的光路。 路径差引入发射信号和反射信号之间的延迟。 波长调谐器将解调器调谐到预定的中心波长，并引入第一和第二发射信号之间的相移。

公开(公告)号：US20100168407A1

公开(公告)日：2010-07-01

申请号：US12063227

申请日：2006-07-24

申请人： Pengcheng Li ,  Zhanyong Guo ,  Song Liu ,  Ronge Xing ,  Huahua Yu ,  Pibo Wang ,  Xiaolin Chen ,  Cuiping Li

发明人： Pengcheng Li ,  Zhanyong Guo ,  Song Liu ,  Ronge Xing ,  Huahua Yu ,  Pibo Wang ,  Xiaolin Chen ,  Cuiping Li

IPC分类号： C08B37/08

CPC分类号： A01N43/16 ,  A61K31/14 ,  C08B37/003

摘要： The invention relates to a novel kind of chitosan derivative, specifically to quaternized carboxymethyl chitosand derivatives and preparation method. Chitosan with different molecular weight reacts with chloroactic acid give rise to carboxymethyl chitosan. After reaction of Schiff based, deoxidized and quaternized, quaternized carboxymethyl chitosan is obtained. This kind of chitosan derivative have better water-solubility and better antifungal activity, which can used in the fields of medicine and agriculture.

摘要翻译： 本发明涉及一种新型壳聚糖衍生物，特别涉及季铵化羧甲基壳聚糖衍生物及其制备方法。 不同分子量的壳聚糖与氯代酸反应产生羧甲基壳聚糖。 在基于Schiff的基础上，脱氧和季铵化后，得到季铵化的羧甲基壳聚糖。 这种壳聚糖衍生物具有更好的水溶性和更好的抗真菌活性，可用于医药和农业领域。

公开(公告)号：US07465680B2

公开(公告)日：2008-12-16

申请号：US11221303

申请日：2005-09-07

申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

摘要翻译： 描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。 在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力 。 本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。 在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置 暴露于等离子体。

公开(公告)号：US20070281448A1

公开(公告)日：2007-12-06

申请号：US11753968

申请日：2007-05-25

申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  Shankar Venkataraman

发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  Shankar Venkataraman

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/20 ,  H01L21/302

CPC分类号： C23C16/045 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31633

摘要： Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.

摘要翻译： 描述了用氧化硅填充衬底上的间隙的方法。 所述方法可以包括以下步骤：将有机硅前体和氧前体引入沉积室，使前体反应以在衬底上的间隙中形成第一氧化硅层，并蚀刻第一氧化硅层以还原碳 内容在图层中。 所述方法还可以包括在第一层上形成第二氧化硅层，并蚀刻第二层以降低第二层中的碳含量。 在填充间隙之后对氧化硅层进行退火。

公开(公告)号：US20070054504A1

公开(公告)日：2007-03-08

申请号：US11221303

申请日：2005-09-07

申请人： Xiaolin Chen ,  Srinivas Nemani ,  DongQing Li ,  Jeffrey Munro ,  Marlon Menezes

发明人： Xiaolin Chen ,  Srinivas Nemani ,  DongQing Li ,  Jeffrey Munro ,  Marlon Menezes

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

摘要翻译： 描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。 在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置，并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力 。 本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。 在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置 暴露于等离子体。

公开(公告)号：US20060286764A1

公开(公告)日：2006-12-21

申请号：US11422150

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/76

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

公开(公告)号：US07109114B2

公开(公告)日：2006-09-19

申请号：US10841582

申请日：2004-05-07

申请人： Xiaolin Chen ,  Jason Bloking

发明人： Xiaolin Chen ,  Jason Bloking

IPC分类号： H01L21/44

CPC分类号： H01L21/02164 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

摘要翻译： 一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅 在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。 另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有 具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

公开(公告)号：US20130149462A1

公开(公告)日：2013-06-13

申请号：US13494341

申请日：2012-06-12

申请人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

发明人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC分类号： C23C16/40

CPC分类号： C23C16/401 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274

摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

摘要翻译： 描述形成电介质层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。 氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。 或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。 任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

公开(公告)号：US20120177846A1

公开(公告)日：2012-07-12

申请号：US13236388

申请日：2011-09-19

申请人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

发明人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

IPC分类号： C23C16/40 ,  C23C16/56 ,  C23C16/50

CPC分类号： C23C16/308 ,  C23C16/045 ,  C23C16/452 ,  C23C16/56

摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

摘要翻译： 描述形成氧化硅层的方法。 这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。 可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。