Abstract:
A method, system, and computer program product are provided for adjusting write timing in a memory device based on results of an error detection function. For instance, the method can include determining a write timing window between a signal on a data bus and a write clock signal based on the results of the error detection function. The method can also include adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.
Abstract:
Embodiments of the disclosed technology provide a TFT-LCD and manufacturing method and driving method thereof. The TFT-LCD comprises a color filter substrate, an array substrate, and a liquid crystal layer sandwiched between the color filter substrate and the array substrate. A first strip-like electrode and a second strip-like electrode are formed in the area of a black matrix on the color filter substrate, an area surrounded by the first strip-like electrode and the second strip-like electrode comprises at least one sub-pixel area, and the first strip-like electrode and second strip-like electrode are electrically insulated from each other.
Abstract:
Described herein is a non-invasive determination of locations of neural activity in a brain. In particular, methods and systems have been developed that utilize a FINES algorithm for use in three-dimensional (3-D) dipole source localization to locate neural activity in a brain.
Abstract:
A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.
Abstract:
A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.
Abstract:
Isolated monomelic aminoacyl-tRNA synthetase polypeptides and polynucleotides having non-canonical biological activities are provided, as well as compositions and methods related thereto.
Abstract:
In various embodiments, dedicated mask pins are eliminated by sending a data mask on address lines of the interface. A memory controller receives a request for a memory write operation from a memory client and determines the granularity of the write data from a write data mask sent by the client. Granularity, as used herein, indicates a quantity of write data to which each bit of the received write data mask applies. In an embodiment, the memory controller generates a particular write command and a particular write data mask based on the granularity of the write data. The write command generated is typically the most efficient of several write commands available, but embodiments are not so limited. The write command is transmitted on command lines of the interface, and the write data mask is transmitted on address lines of the interface.
Abstract:
A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.
Abstract:
In various embodiments, dedicated mask pins are eliminated by sending a data mask on address lines of the interface. A memory controller receives a request for a memory write operation from a memory client and determines the granularity of the write data from a write data mask sent by the client. Granularity, as used herein, indicates a quantity of write data to which each bit of the received write data mask applies. In an embodiment, the memory controller generates a particular write command and a particular write data mask based on the granularity of the write data. The write command generated is typically the most efficient of several write commands available, but embodiments are not so limited. The write command is transmitted on command lines of the interface, and the write data mask is transmitted on address lines of the interface.
Abstract:
Another embodiment of the present invention provides an array substrate and a liquid crystal display. The array substrate comprises a plurality of gate lines and a plurality of data lines, and the gate lines and the data lines intersect each other to define a plurality of sub-pixel regions; each sub-pixel region comprises a first transparent electrode, a second transparent electrode and a thin film transistor (TFT), and in the sub-pixel region, a first edge of the second transparent electrode away from the TFT and along the direction of the gate lines is parallel to a second edge of a gate line for an adjacent sub-pixel region, and the second edges is the edge, closest to the first edge, of the gate line for the adjacent sub-pixel region.