公开(公告)号：US5684658A

公开(公告)日：1997-11-04

申请号：US727264

申请日：1996-10-07

申请人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

发明人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

IPC分类号： G11B5/012 ,  G11B5/39 ,  G11B5/48

CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B5/3967 ,  G11B5/488

摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element, and the dual stripe magnetoresistive (DSMR) sensor element formed through the method. To practice the method, there is formed upon a substrate a first magnetoresistive (MR) layer, where the first magnetoresistive (MR) layer has a first sensor region longitudinally magnetically biased in a first longitudinal bias direction through a patterned first longitudinal magnetic biasing layer. There is then formed a second magnetoresistive (MR) layer parallel with and separated from the first magnetoresistive (MR) layer by an insulator layer. The second magnetoresistive (MR) layer has a second sensor region longitudinally magnetically biased in a second longitudinal bias direction through a patterned second longitudinal magnetic biasing layer. The first longitudinal bias direction and the second longitudinal bias direction are substantially parallel. In addition, the first sensor region and the second sensor region are physically offset. Finally, the first magnetoresistive (MR) layer is electromagnetically biased with a first bias current in a first bias current direction and the second magnetoresistive (MR) layer is electromagnetically biased with a second bias current in a second bias current direction, where the first bias current direction and the second bias current direction are substantially parallel.

摘要翻译： 一种用于形成双条磁阻（DSMR）传感器元件的方法和通过该方法形成的双条带磁阻（DSMR）传感器元件。 为了实施该方法，在衬底上形成第一磁阻（MR）层，其中第一磁阻（MR）层具有通过图案化的第一纵向磁偏置层在第一纵向偏置方向上纵向磁偏置的第一传感器区。 然后通过绝缘体层形成与第一磁阻（MR）层平行并与第一磁阻（MR）层分离的第二磁阻（MR）层。 第二磁阻（MR）层具有通过图案化的第二纵向磁偏置层在第二纵向偏置方向上纵向磁偏置的第二传感器区。 第一纵向偏置方向和第二纵向偏置方向基本平行。 此外，第一传感器区域和第二传感器区域被物理偏移。 最后，第一磁阻（MR）层在第一偏置电流方向上以第一偏置电流进行电磁偏置，第二磁阻（MR）层在第二偏置电流方向上以第二偏置电流进行电磁偏置，其中第一偏置 电流方向和第二偏置电流方向基本上平行。

公开(公告)号：US5719730A

公开(公告)日：1998-02-17

申请号：US682476

申请日：1996-07-17

申请人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

发明人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

IPC分类号： G11B5/012 ,  G11B5/187 ,  G11B5/265 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1871 ,  G11B5/2651 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/012

摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.

摘要翻译： 低边缘场和窄写磁道磁读写头。 低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。 第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。 低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。 第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。 第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。 第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。 最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

公开(公告)号：US06287476B1

公开(公告)日：2001-09-11

申请号：US09332429

申请日：1999-06-14

申请人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

发明人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.

摘要翻译： 使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。 通过阳极氧化MR传感器形成钝化层。 钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。 该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。 然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。 蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。 然后我们在钝化层和MR传感器上沉积铅层。 去除剥离结构，其中钝化层限定轨道宽度。 钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

公开(公告)号：US06322640B1

公开(公告)日：2001-11-27

申请号：US09489969

申请日：2000-01-24

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

IPC分类号： H01F4100

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.

摘要翻译： 一种用于形成磁偏置磁阻（MR）层的方法。 首先提供基板。 然后在衬底上形成铁磁磁阻（MR）材料层。 然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相 铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。 然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。 最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。 该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

公开(公告)号：US06274025B1

公开(公告)日：2001-08-14

申请号：US09332433

申请日：1999-06-14

申请人： Jei-Wei Chang ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Kochan Ju ,  Mao-Min Chen

发明人： Jei-Wei Chang ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Kochan Ju ,  Mao-Min Chen

IPC分类号： C25D502

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996

摘要： A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure. Then, a lead layer is deposited over the passivation layer and MR sensor. The lift-off structure is removed.

摘要翻译： 在MR传感器上形成钝化层的方法，使得钝化层限定轨道宽度。 钝化层与氧化MR传感器并显影光致抗蚀剂的新型显影/氧化溶液中的剥离结构的发展同时形成。 钝化层是电绝缘体，其防止传感器电流通过引线的过度喷射和热导体分流，以允许MR热量通过过喷器消散。 该方法包括：在MR传感器上旋转并打印剥离光致抗蚀剂结构。 接下来，开发剥离光致抗蚀剂结构。 将MR传感器在显影/氧化溶液中进行阳极氧化，以：（1）去除下部光致抗蚀剂的部分，和（2）在MR层上至少部分地在上部光致抗蚀剂层下形成（例如，薄的NiFeO）钝化层。 钝化层被蚀刻以除去未被剥离结构覆盖的钝化层。 然后，在钝化层和MR传感器上沉积引线层。 剥离结构被去除。

公开(公告)号：US06524491B1

公开(公告)日：2003-02-25

申请号：US09298935

申请日：1999-04-26

申请人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

发明人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032

摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.

摘要翻译： 制造磁记录头的方法包括以下步骤。 在基板上形成低磁矩，第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。 在种子层上形成PLM第二屏蔽层，并平整屏蔽层。 在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。 在非磁性间隔层上形成第一个HMM，下极层。 覆盖第一个HMM，具有写间隙层的下极层。 在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。 写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。 然后在写入头部掩模之外的写间隙层上形成HMM，上极层。 在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

公开(公告)号：US06393692B1

公开(公告)日：2002-05-28

申请号：US09283840

申请日：1999-04-01

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

IPC分类号： H04R3100

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US06367146B1

公开(公告)日：2002-04-09

申请号：US08635097

申请日：1996-04-17

申请人： Cherng-Chyi Han ,  David Hernandez ,  Jei-Wei Chang ,  Shou-Chen Kao

发明人： Cherng-Chyi Han ,  David Hernandez ,  Jei-Wei Chang ,  Shou-Chen Kao

IPC分类号： G11B5127

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49046

摘要： A method comprises the step of providing a read-write element on a wafer including at least one magnetoresistive stripe, providing a shared pole layer above the magnetoresistive stripe, and planarizing the shared pole layer. Thereafter, a top pole layer is formed above the shared pole layer. Together, the shared and top pole layers form the write element. Because the shared pole layer is planarized, the gap portion of the write element between the shared and top pole layers is flat. Because of this, improved recording density can be achieved.

摘要翻译： 一种方法包括在包括至少一个磁阻条纹的晶片上提供读写元件的步骤，在磁阻条上设置共享极层，并平坦化共享极层。 此后，在共享极层上形成顶极层。 一起，共享和顶极层形成写入元件。 由于共用极层被平坦化，所以共用极层和顶极层之间的写入元件的间隙部分是平坦的。 因此，可以实现改善的记录密度。

公开(公告)号：US06243939B1

公开(公告)日：2001-06-12

申请号：US09412630

申请日：1999-10-04

申请人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

发明人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

IPC分类号： G11B542

CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of manufacturing a magnetic transducer structure using a special pole etch using an IBE preferably with Kr or Xe, and a write gap material with a high IBE etch rate such as Ta, NiCu alloys, Pd, Pd—Cu alloys. A first layer of pole material and a write gap insulating layer are formed over the substrate. The write gap layer is composed of a material having a high ion beam etch rate compared to the first and second layers of pole material. The write gap insulating layer is preferably composed of Ni—Cu alloy, Pd, Pd—Cu alloys. Next, a second layer of pole material is formed on the first insulating layer. In a key step, we ion beam etch (IBE) the second pole; the write gap insulating layer and the first layer; the second pole serving as an etch mask during the ion beam etching to form a head. In a second preferred embodiment of the invention, the ion beam etching performed using a gas of Kr or Xe. The invention teaches a high IBE etch selectivity from the write gap dielectric to the upper pole (NeFe) for partial pole trim (PPT) applications by three embodiments: (a) selecting high IBE rate gap dielectric materials (e.g., NiCu alloys, Pd, and Pd—Cu alloys, (b) using an IBE gas Kr or Xr or both, instead of Ar, and (c) both (a) and (b).

摘要翻译： 使用优选用Kr或Xe的IBE制造使用特殊极蚀刻的磁换能器结构的方法以及具有高IBE蚀刻速率的写间隙材料，例如Ta，NiCu合金，Pd，Pd-Cu合金。 第一层极材料层和写间隙绝缘层形成在衬底上。 写间隙层由与第一和第二极材料层相比具有高离子束蚀刻速率的材料组成。 写间隙绝缘层优选由Ni-Cu合金，Pd，Pd-Cu合金构成。 接下来，在第一绝缘层上形成第二极极材料层。 在关键的一步中，我们离子束蚀刻（IBE）是第二极; 写间隙绝缘层和第一层; 第二极在离子束蚀刻期间用作蚀刻掩模以形成头部。 在本发明的第二优选实施例中，使用Kr或Xe的气体进行离子束蚀刻。 本发明通过三个实施例教导了从写间隙电介质到上极（NeFe）的高IBE蚀刻选择性：（a）选择高IBE速率间隙电介质材料（例如，NiCu合金，Pd， 和Pd-Cu合金，（b）使用IBE气体Kr或Xr或两者代替Ar，和（c）（a）和（b）两者。

公开(公告)号：US06415500B1

公开(公告)日：2002-07-09

申请号：US09482050

申请日：2000-01-13

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Jen-Wei Koo ,  Rodney Lee ,  Li-Yan Zhu ,  Jei-Wei Chang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Jen-Wei Koo ,  Rodney Lee ,  Li-Yan Zhu ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3173 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49156 ,  Y10T29/49165

摘要： Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.

摘要翻译： 公开了在磁阻（MR）或巨磁阻（GMR）读/磁头磁盘驱动器的晶片制造过程中避免静电电荷累积和随后的静电放电（ESD）的方法和结构。 这通过设计晶片布局和工艺来实现，使得MR / GMR传感器膜通过短路路径短路到磁头的磁屏蔽，使得在整个制造期间MR / GMR传感器膜和磁屏蔽之间具有相等的电位 处理。