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1.发明授权Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking 失效集成电路结构，具有用于多层金属化的导电保护层，以允许返工
公开(公告)号：US4672420A
公开(公告)日：1987-06-09
申请号：US722957
申请日：1985-04-12
申请人： Yan Borodovsky , Mammen Thomas , Danny Ma
发明人： Yan Borodovsky , Mammen Thomas , Danny Ma
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/525 , H01L23/532 , H01L23/14 , H01L23/54
CPC分类号： H01L21/76897 , H01L23/525 , H01L23/53223 , H01L23/53271 , H01L2924/0002
摘要： An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated during production of the structure with a conductive layer capable of withstanding metal removal means, and an upper metallization layer is subsequently applied to the structure. At least a portion of the subsequent metallization layer is in ohmic contact with the conductive layer and the lower metallization layer is protected by the intervening conductive layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. In a preferred embodiment, the use of the conductive layer over a metallization layer further enhances the construction process during patterning of a photoresist applied over the conductive layer by the use of a conductive material having antireflective properties.
摘要翻译： 公开了一种改进的集成电路结构和制造该结构的方法，其中在具有能够承受金属去除装置的导电层的结构生产期间至少涂覆一个金属化层，随后将上部金属化层施加到该结构 。 后续金属化层的至少一部分与导电层欧姆接触，并且如果随后的结构的再加工变得必要，则随后去除上部金属化层期间，下部金属化层被中间导电层保护。 在优选实施例中，在金属化层上使用导电层进一步增强了通过使用具有抗反射特性的导电材料在施加在导电层上的光致抗蚀剂图案化期间的构造过程。
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公开(公告)号：US07512926B2
公开(公告)日：2009-03-31
申请号：US11242165
申请日：2005-09-30
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
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公开(公告)号：US07438997B2
公开(公告)日：2008-10-21
申请号：US10846403
申请日：2004-05-14
申请人： Edita Tejnil , Yan Borodovsky
发明人： Edita Tejnil , Yan Borodovsky
CPC分类号： G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
摘要： Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.
摘要翻译： 光刻系统和技术。 一方面，一种方法包括通过用包括具有小于辐射的一个波长的间距尺寸的亚波长特征的器件来调制辐射的零衍射级的强度和相位来产生微电子器件。
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公开(公告)号：US07142282B2
公开(公告)日：2006-11-28
申请号：US10688306
申请日：2003-10-17
申请人： Yan Borodovsky
发明人： Yan Borodovsky
CPC分类号： G03F7/70408 , G03F7/0035 , G03F7/20 , G03F7/2022 , G03F7/70433
摘要： A device that includes contacts. In one implementation, a device includes a substantially arbitrary arrangement of contacts. The contacts in the device are defined with a definition characteristic of interference lithography.
摘要翻译： 包含联系人的设备。 在一个实现中，设备包括基本上任意的触点布置。 设备中的触点用干涉光刻的定义特性定义。
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5.发明申请Composite optical lithography method for patterning lines of significantly different widths 审中-公开复合光刻方法用于图案线显着不同的宽度公开(公告)号：US20050074698A1
公开(公告)日：2005-04-07
申请号：US10681030
申请日：2003-10-07
申请人： Yan Borodovsky
发明人： Yan Borodovsky
CPC分类号： G03F7/70408 , G03F7/7045
摘要： A composite patterning technique may include three lithography processes. A first lithography process forms a periodic pattern of alternating continuous lines of substantially equal width and spaces on a first photoresist. A second lithography process uses a non-interference lithography technique to break continuity of the patterned lines and form portions of desired integrated circuit features. The first photoresist may be developed. A second photoresist is formed over the first photoresist. A third lithography process uses a non-interference lithography technique to expose a pattern on the second photoresist and form remaining desired features of an integrated circuit pattern.
摘要翻译： 复合图案化技术可以包括三个光刻工艺。 第一光刻工艺在第一光致抗蚀剂上形成基本相同宽度和间隔的交替连续线的周期性图案。 第二光刻工艺使用非干涉光刻技术来破坏图案化线的连续性并形成所需集成电路特征的部分。 可以开发第一光致抗蚀剂。 在第一光致抗蚀剂上形成第二光致抗蚀剂。 第三光刻工艺使用非干涉光刻技术来暴露第二光致抗蚀剂上的图案并形成集成电路图案的剩余期望特征。
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6.发明授权Method and lens arrangement to improve imaging performance of microlithography exposure tool 失效方法和透镜布置，以提高微光刻曝光工具的成像性能
公开(公告)号：US6069739A
公开(公告)日：2000-05-30
申请号：US109299
申请日：1998-06-30
CPC分类号： G02B3/0056 , G02B27/48 , G02B3/0068 , G02B5/04 , G03F7/70583 , G02B2207/117 , Y10S359/90
摘要： A technique for introducing variable phase delay across portions of a spatially coherent light beam, such as a laser, without changing the focal length of the portions of the beam. A fly's-eye lens array is utilized to distribute the light for a more uniform illumination, but different length air gaps are introduced in the lens elements to provide a variable delay of portions of the beam. In a second scheme, a set of prisms is positioned in the path of the laser beam, in which the shape of the prism introduces variable phase delay across the cross-section of the beam.
摘要翻译： 用于在空间相干光束（例如激光器）的部分上引入可变相位延迟而不改变光束部分的焦距的技术。 利用蝇眼透镜阵列来分配光以获得更均匀的照明，但是在透镜元件中引入不同长度的气隙以提供光束的部分的可变延迟。 在第二方案中，一组棱镜位于激光束的路径中，其中棱镜的形状在横梁的横截面上引入可变相位延迟。
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7.发明授权Phase shifting mask having a phase shift that minimizes critical dimension sensitivity to manufacturing and process variance 失效相移掩模具有使关键尺寸对制造和工艺方差的敏感性最小化的相移
公开(公告)号：US5840448A
公开(公告)日：1998-11-24
申请号：US777599
申请日：1996-12-31
申请人： Yan Borodovsky , Vivek Singh
发明人： Yan Borodovsky , Vivek Singh
摘要： A reticle having only one phase delay value for a given wavelength of incident radiation. The reticle includes a first and second region, both transparent to incident radiation. The second region being adjacent to said first region. The incident radiation transmitted by the second region has a phase delay of other than an integer multiple of 90 degrees relative to said incident radiation transmitted by the first region.
摘要翻译： 对于给定波长的入射辐射仅具有一个相位延迟值的光罩。 掩模版包括对入射辐射透明的第一和第二区域。 第二区域与所述第一区域相邻。 由第二区域发射的入射辐射具有相对于由第一区域发射的入射辐射的90度的整数倍的相位延迟。
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公开(公告)号：US08112726B2
公开(公告)日：2012-02-07
申请号：US12316064
申请日：2008-12-09
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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公开(公告)号：US20090100400A1
公开(公告)日：2009-04-16
申请号：US12316085
申请日：2008-12-09
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
IPC分类号： G06F17/50
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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公开(公告)号：US20090042111A1
公开(公告)日：2009-02-12
申请号：US12254101
申请日：2008-10-20
申请人： EDITA TEJNIL , Yan Borodovsky
发明人： EDITA TEJNIL , Yan Borodovsky
CPC分类号： G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
摘要： Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.
摘要翻译： 光刻系统和技术。 一方面，一种方法包括通过用包括具有小于辐射的一个波长的间距尺寸的亚波长特征的器件来调制辐射的零衍射级的强度和相位来产生微电子器件。
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