摘要:
An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the SRAM memory cell has means for compensating for a leakage current flowing into the SRAM memory cell. The means are designed in such a way that a current corresponding to the leakage current flows into the SRAM memory cell. In one exemplary embodiment, the means are formed as a transistor which is electrically connected to the first bit line and the second memory node, the first memory node being connected to the selection transistor.
摘要:
An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the SRAM memory cell has means for compensating for a leakage current flowing into the SRAM memory cell. The means are designed in such a way that a current corresponding to the leakage current flows into the SRAM memory cell. In one exemplary embodiment, the means are formed as a transistor which is electrically connected to the first bit line and the second memory node, the first memory node being connected to the selection transistor.
摘要:
An apparatus is provided that uses a first level shifter for performing a voltage shift of a low level input signal of a first voltage domain to a high level output signal of a second voltage domain. The first level shifter comprises a storing element in the second voltage domain, an input stage coupled to the storing element for providing a signal state to be stored in the storing element and a feedback loop from an output of the storing element to the input stage for controlling the input stage in response to a transition of a high level output signal of the storing element.
摘要:
An integrated circuit device for switching electrical loads that have an inductive component comprises at least one switching channel that includes a power stage with a power MOS transistor and a driver circuit for driving the gate of the power MOS transistor, the switching stage being configurable for use in either of a High Side configuration and a Low Side configuration.
摘要:
With conventional charge pumps, significant noise is present due at least in part to large changes in the supply current. To combat this problem, a charge pump is provided that includes a number of stages. These stages are coupled to receive periodic alternating voltages having a phase shift with respect to each other so that the changes in the supply current are reduced, which reduces noise.
摘要:
An electronic device for switched mode DC-DC conversion is provided that includes a stage for sensing an output current causing a voltage difference between a first and a second node. The current sensing stage includes a comparator being capacitively coupled with a first input to the first node and with a second input to the second node for determining a magnitude of the output current.
摘要:
An electronic device includes an operational amplifier, with the operational amplifier having an amplifier input stage coupled with a first output node to an amplifier output stage. A compensation capacitance is connected between an output node of the amplifier output stage and the first output node of the amplifier input stage, thereby operating as a compensator for stabilizing the operational amplifier. The compensation capacitance provides a parasitic diode drawing a first leakage current from the first output node of the amplifier input stage, a leakage current compensation circuit being coupled to the first output node of the amplifier input stage and coupled to a second output node of the amplifier input stage for drawing a first current from the first output node and a second current from the second output node. The leakage current compensation circuit is adapted such that the second current is greater than the first current by an amount corresponding to the first leakage current.
摘要:
A differential current evaluation circuit has a differential amplifier and a circuit for setting an input resistance of the current evaluation circuit. The circuit is connected to the outputs and the inputs of the differential amplifier and to signal lines. A sense amplifier circuit has a circuit section, in which a signal is available at an output in a temporally continuous manner even if, after the deactivation of the circuit connected upstream, a signal, in particular a signal supplied by the current evaluation circuit, is no longer present at its input. The differential current evaluation circuit and the sense amplifier circuit are disposed in a circuit configuration for reading out and evaluating a memory state of a semiconductor memory cell. The current evaluation circuit can be activated by a circuit section for automatic deactivation before a read operation and be automatically deactivated directly after the read operation has ended.
摘要:
An apparatus is provided that uses a first level shifter for performing a voltage shift of a low level input signal of a first voltage domain to a high level output signal of a second voltage domain. The first level shifter comprises a storing element in the second voltage domain, an input stage coupled to the storing element for providing a signal state to be stored in the storing element and a feedback loop from an output of the storing element to the input stage for controlling the input stage in response to a transition of a high level output signal of the storing element.
摘要:
An electronic device for switched mode DC-DC conversion is provided that includes a stage for sensing an output current causing a voltage difference between a first and a second node. The current sensing stage includes a comparator being capacitively coupled with a first input to the first node and with a second input to the second node for determining a magnitude of the output current.