公开(公告)号：US07966280B2

公开(公告)日：2011-06-21

申请号：US12069579

申请日：2008-02-11

申请人： Yasufumi Kojima ,  Hiroshi Takeda ,  Kousuke Hara

发明人： Yasufumi Kojima ,  Hiroshi Takeda ,  Kousuke Hara

IPC分类号： G06F15/00 ,  G06F15/18 ,  G01M1/38 ,  G05B13/00 ,  G05B15/00 ,  G05D23/00

CPC分类号： B60H1/00735 ,  B60H1/00771 ,  B60H1/00971

摘要： An automotive air conditioner includes a storage unit which stores a plurality of pieces of state information as respective learned data; a learning unit which constructs a probabilistic model; a control information correcting unit which corrects setting information, etc., related to a vehicle occupant's setting operation in accordance with a calculated probability so as to achieve a specific setting operation; and an air-conditioning control unit which controls an air-conditioning unit in accordance with the corrected setting information, etc. The learning unit includes a clustering subunit for classifying the plurality of learned data into at least first and second clusters and for determining first and second ranges for the value of the state information from the learned data included in the respective clusters, and a probabilistic model constructing subunit for constructing the probabilistic model by determining the probabilities for the state information contained in the first and second ranges, respectively.

摘要翻译： 汽车空调包括：存储单元，存储多条状态信息作为各自的学习数据; 构建概率模型的学习单元; 控制信息校正单元，根据计算出的概率校正与车辆乘员的设定操作有关的设定信息等，以实现特定的设定操作; 以及空调控制单元，其根据校正的设置信息等来控制空调单元。学习单元包括聚类子单元，用于将多个学习数据分类为至少第一和第二簇，并且用于确定第一和第 用于根据包含在各个簇中的学习数据的状态信息的值的第二范围和用于通过确定包含在第一和第二范围中的状态信息的概率来构建概率模型的概率模型构造子单元。

公开(公告)号：US20080195564A1

公开(公告)日：2008-08-14

申请号：US12069579

申请日：2008-02-11

申请人： Yasufumi Kojima ,  Hiroshi Takeda ,  Kousuke Hara

发明人： Yasufumi Kojima ,  Hiroshi Takeda ,  Kousuke Hara

IPC分类号： G06F15/18 ,  G05B13/04

CPC分类号： B60H1/00735 ,  B60H1/00771 ,  B60H1/00971

摘要： An automotive air conditioner includes a storage unit which stores a plurality of pieces of state information as respective learned data; a learning unit which constructs a probabilistic model; a control information correcting unit which corrects setting information, etc., related to a vehicle occupant's setting operation in accordance with a calculated probability so as to achieve a specific setting operation; and an air-conditioning control unit which controls an air-conditioning unit in accordance with the corrected setting information, etc. The learning unit includes a clustering subunit for classifying the plurality of learned data into at least first and second clusters and for determining first and second ranges for the value of the state information from the learned data included in the respective clusters, and a probabilistic model constructing subunit for constructing the probabilistic model by determining the probabilities for the state information contained in the first and second ranges, respectively.

摘要翻译： 汽车空调包括：存储单元，存储多条状态信息作为各自的学习数据; 构建概率模型的学习单元; 控制信息校正单元，根据计算出的概率校正与车辆乘员的设定操作有关的设定信息等，以实现特定的设定操作; 以及空调控制单元，其根据校正的设置信息等来控制空调单元。学习单元包括聚类子单元，用于将多个学习数据分类为至少第一和第二簇，并且用于确定第一和第 用于根据包含在各个簇中的学习数据的状态信息的值的第二范围和用于通过确定包含在第一和第二范围中的状态信息的概率来构建概率模型的概率模型构造子单元。

公开(公告)号：US20090082967A1

公开(公告)日：2009-03-26

申请号：US12283906

申请日：2008-09-16

申请人： Kousuke Hara ,  Yoshiaki Sakakura ,  Hirotoshi Iwasaki ,  Hiroshi Takeda ,  Yasufumi Kojima ,  Tetsuya Hara

发明人： Kousuke Hara ,  Yoshiaki Sakakura ,  Hirotoshi Iwasaki ,  Hiroshi Takeda ,  Yasufumi Kojima ,  Tetsuya Hara

IPC分类号： G01C21/00

CPC分类号： B60H1/00735 ,  B60H1/00771 ,  G01C21/34

摘要： A route length calculation apparatus comprises: a location detection unit for acquiring current location of a mobile object; an event detection unit for detecting the occurrence of an applicable event; a route history information storage unit for storing, upon occurrence of a first event, past route information containing at least the point of occurrence of the first event; and a distance calculation unit for calculating, when occurrence of a second event is detected by the event detection unit, the shortest route length between the point of occurrence of the second event acquired by the location detection unit and the point of occurrence of the first event along a route that the mobile object has traveled before.

摘要翻译： 路线长度计算装置包括：位置检测单元，用于获取移动物体的当前位置; 事件检测单元，用于检测适用事件的发生; 路线历史信息存储单元，用于在发生第一事件时存储至少包含第一事件发生点的过去路线信息; 以及距离计算单元，用于当事件检测单元检测到第二事件的发生时，计算由位置检测单元获取的第二事件的发生点与第一事件的发生点之间的最短路线长度 沿着移动对象之前旅行的路线。

公开(公告)号：US08560166B2

公开(公告)日：2013-10-15

申请号：US12762802

申请日：2010-04-19

申请人： Takuya Mori ,  Tetsuya Hara ,  Norio Yamamoto ,  Kousuke Hara ,  Hirotoshi Iwasaki

发明人： Takuya Mori ,  Tetsuya Hara ,  Norio Yamamoto ,  Kousuke Hara ,  Hirotoshi Iwasaki

IPC分类号： G01M17/00

CPC分类号： B60W30/18054 ,  B60W10/30 ,  B60W2560/02

摘要： An obtaining unit obtains information about a condition where a vehicle is placed. A detection unit detects at least one of a voice and an action of an occupant of the vehicle. An estimation unit estimates an in-vehicle apparatus to be a controlled target according to the condition where the vehicle is placed. A determination unit determines an in-vehicle apparatus to be a controlled in-vehicle apparatus and determines a control content thereof in consideration of the at least one of a voice and an action. A notification unit notifies the occupant of the in-vehicle apparatus to be controlled and the control content thereof determined by the determination unit. A control unit controls the in-vehicle apparatus according to the determination of the determination unit when receiving a response to the notification of the notification unit from the occupant to permit the control of the in-vehicle apparatus.

摘要翻译： 获取单元获取关于车辆被放置的状况的信息。 检测单元检测车辆的乘客的语音和动作中的至少一个。 估计单元根据放置车辆的状况将车载设备估计为受控对象。 确定单元将车载设备确定为受控车载设备，并且考虑到语音和动作中的至少一个来确定其控制内容。 通知单元向乘员通知要被控制的车载设备及其由确定单元确定的控制内容。 控制单元，当接收到来自乘员的通知单元的通知的响应，根据确定单元的确定来控制车载设备以允许对车载设备的控制。

公开(公告)号：US06989742B2

公开(公告)日：2006-01-24

申请号：US10326447

申请日：2002-12-23

申请人： Reiko Ueno ,  Noriko Kaneda ,  Takashi Omori ,  Kousuke Hara ,  Hiroshi Yamamoto ,  Shigeyuki Inoue ,  Shinji Tanaka

发明人： Reiko Ueno ,  Noriko Kaneda ,  Takashi Omori ,  Kousuke Hara ,  Hiroshi Yamamoto ,  Shigeyuki Inoue ,  Shinji Tanaka

IPC分类号： G08B29/00

CPC分类号： G06K9/00771 ,  G06F19/00 ,  G06K9/00335 ,  G06K9/6218 ,  G06K9/6284 ,  G06K9/6297 ,  G08B21/0423 ,  G08B21/0469 ,  G08B31/00

摘要： An abnormality detection device includes small motion sensors that detect small motions of a person in a house; a data collecting unit that collects and stores sensor signals from the small motion sensors as sensor patterns, and a Markov chain operating unit 33 that transforms the sensor patterns into a cluster sequence by vector-quantizing input patterns which are obtained by averaging and normalizing the sensor patterns, and calculates a transition number matrix and a duration time distribution of a Markov and so on using a Markov chain model. The abnormality detection device also includes a comparing unit that calculates a characteristic amount (Euclid distance and average log likelihood in an appearance frequency of a Markov chain and an average log likelihood to the duration time distribution of a Markov chain) of a sample activity as against a daily activity based on the obtained transition number matrix and the duration time distribution and so on.

摘要翻译： 异常检测装置包括检测房屋中的人的小运动的小型运动传感器; 收集并存储来自小型运动传感器的传感器信号作为传感器图案的数据收集单元，以及马尔科夫链操作单元33，其通过对通过对传感器进行平均和归一化所获得的输入图案进行矢量量化而将传感器图案变换为群集序列 模式，并使用马尔可夫链模型计算马尔可夫等的转换数矩阵和持续时间分布。 异常检测装置还包括比较单元，其将样本活动的特征量（马尔科夫链的出现频率中的欧几里德距离和平均对数似然度以及马尔科夫链的持续时间分布的平均对数似然度）反映为 基于获得的转换数矩阵和持续时间分布等进行日常活动。

公开(公告)号：US07560389B2

公开(公告)日：2009-07-14

申请号：US11429216

申请日：2006-05-08

申请人： Kousuke Hara

发明人： Kousuke Hara

IPC分类号： H01L21/76

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/76202

摘要： A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.

摘要翻译： 一种用于在半导体衬底上制造半导体元件的方法，该半导体衬底具有支撑衬底和在支撑衬底上方的半导体层。 该方法包括制备具有晶体管形成区域和均匀地限定在其上的元件隔离区域的半导体衬底; 在半导体衬底的半导体层上形成衬垫氧化膜; 在所述垫氧化膜上形成抗氧化掩模层; 形成抗蚀剂掩模以覆盖抗氧化掩模层上的晶体管形成区域; 使用所述抗蚀剂掩模作为掩模进行用于蚀刻所述耐氧化掩模层的第一蚀刻工艺，以暴露所述元件隔离区域的所述衬垫氧化物膜; 并且通过使用暴露的抗氧化掩模层作为掩模，通过LOCOS去除抗蚀剂掩模并氧化暴露的焊盘氧化物膜下方的半导体层以形成元件隔离层。

公开(公告)号：US08018014B2

公开(公告)日：2011-09-13

申请号：US12155054

申请日：2008-05-29

申请人： Kousuke Hara

发明人： Kousuke Hara

IPC分类号： H01L27/14

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14636

摘要： A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底：形成在半导体衬底中的响应于光的光电二极管; 至少在所述半导体衬底上形成的层间绝缘层，所述至少一个层间绝缘层包括最上绝缘层; 至少导电布线层，其包括形成在最上绝缘层上的最高导电布线层; 以及形成在最上面的导电布线层上的第一钝化层。 最上层的布线层不直接形成在光电二极管的正上方。 第一钝化层由耐磁材料材料制成，并且不直接形成在光电二极管的正上方。

公开(公告)号：US20100268412A1

公开(公告)日：2010-10-21

申请号：US12762802

申请日：2010-04-19

申请人： Takuya Mori ,  Tetsuya Hara ,  Norio Yamamoto ,  Kousuke Hara ,  Hirotoshi Iwasaki

发明人： Takuya Mori ,  Tetsuya Hara ,  Norio Yamamoto ,  Kousuke Hara ,  Hirotoshi Iwasaki

IPC分类号： G06F7/00

CPC分类号： B60W30/18054 ,  B60W10/30 ,  B60W2560/02

摘要： An obtaining unit obtains information about a condition where a vehicle is placed. A detection unit detects at least one of a voice and an action of an occupant of the vehicle. An estimation unit estimates an in-vehicle apparatus to be a controlled target according to the condition where the vehicle is placed. A determination unit determines an in-vehicle apparatus to be a controlled in-vehicle apparatus and determines a control content thereof in consideration of the at least one of a voice and an action. A notification unit notifies the occupant of the in-vehicle apparatus to be controlled and the control content thereof determined by the determination unit. A control unit controls the in-vehicle apparatus according to the determination of the determination unit when receiving a response to the notification of the notification unit from the occupant to permit the control of the in-vehicle apparatus.

摘要翻译： 获取单元获取关于车辆被放置的状况的信息。 检测单元检测车辆的乘员的声音和动作中的至少一个。 估计单元根据放置车辆的状况将车载设备估计为受控对象。 确定单元将车载设备确定为受控车载设备，并且考虑到语音和动作中的至少一个来确定其控制内容。 通知单元向乘员通知要被控制的车载设备及其由确定单元确定的控制内容。 控制单元，当接收到来自乘员的通知单元的通知的响应，根据确定单元的确定来控制车载设备以允许对车载设备的控制。

公开(公告)号：US20090294889A1

公开(公告)日：2009-12-03

申请号：US12155054

申请日：2008-05-29

申请人： Kousuke Hara

发明人： Kousuke Hara

IPC分类号： H01L31/00

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14636

摘要： A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底：形成在半导体衬底中的响应于光的光电二极管; 至少在所述半导体衬底上形成的层间绝缘层，所述至少一个层间绝缘层包括最上绝缘层; 至少导电布线层，其包括形成在最上绝缘层上的最高导电布线层; 以及形成在最上面的导电布线层上的第一钝化层。 最上层的布线层不直接形成在光电二极管的正上方。 第一钝化层由耐磁材料材料制成，并且不直接形成在光电二极管的正上方。

公开(公告)号：US20060105540A1

公开(公告)日：2006-05-18

申请号：US11239145

申请日：2005-09-30

申请人： Toyokazu Sakata ,  Kousuke Hara

发明人： Toyokazu Sakata ,  Kousuke Hara

IPC分类号： H01L21/76

CPC分类号： H01L21/76281

摘要： A method for manufacturing a semiconductor element comprised of an SOI structure including an SOI layer comprises the steps of preparing the SOI layer having a transistor forming area and an element isolation area on a surface thereof, forming an oxidation-resistant mask layer on the surface of the SOI layer, forming a resist mask in an area corresponding to the trnasistor forming area on the oxidation-resistant mask layer, a first etching step for etching the oxidation-resistant mask layer using the resist mask in such a manner that the oxidation-resistant mask layer remains by a predetermined thickness, a second etching step for etching the oxidation-resistant mask layer allowed to remain by the predetermined thickness in accordance with the first etching step, using the resist mask and exposing the SOI layer of a portion corresponding to the element isolation area, and oxidizing the exposed SOI layer by a LOCOS method using the oxidation-resistant mask layer allowed to remain in accordance with the second etching step to thereby form an element isolation layer, wherein an etching rate of the oxidation-resistant mask layer in the first etching step is made higher than that of the oxidation-resistant mask layer in the second etching step, and wherein a silicon-to-etching selection ratio in the second etching step is made higher than a silicon-to-etching selection ratio in the first etching step.

摘要翻译： 一种由包括SOI层的SOI结构构成的半导体元件的制造方法，其特征在于，在其表面上准备具有晶体管形成区域和元件隔离区域的SOI层，在其表面形成耐氧化掩模层 所述SOI层在与所述抗氧化掩模层上的导电性能形成区域相对应的区域中形成抗蚀剂掩模，使用所述抗蚀剂掩模以所述抗氧化掩模层的方式蚀刻所述抗氧化掩模层的第一蚀刻步骤 掩模层保持预定厚度，第二蚀刻步骤，用于根据第一蚀刻步骤蚀刻允许保留预定厚度的抗氧化掩模层，使用抗蚀剂掩模并暴露与对应于第一蚀刻步骤的部分的SOI层 元件隔离区域，并且通过使用允许保持的耐氧化掩模层的LOCOS方法氧化暴露的SOI层 与第二蚀刻步骤相对应，从而形成元件隔离层，其中使第一蚀刻步骤中的抗氧化掩模层的蚀刻速率高于第二蚀刻步骤中的抗氧化掩模层的蚀刻速率，其中 使第二蚀刻步骤中的硅蚀刻选择比高于第一蚀刻步骤中的硅蚀刻选择比。