公开(公告)号：US5374322A

公开(公告)日：1994-12-20

申请号：US87293

申请日：1993-07-08

申请人： Yasutaka Okada ,  Yasuhide Fujioka

发明人： Yasutaka Okada ,  Yasuhide Fujioka

IPC分类号： C21D8/00 ,  C21D1/18 ,  C21D1/28 ,  C21D8/02 ,  C21D8/10 ,  C22C38/00 ,  C22C38/18 ,  C22C38/54

CPC分类号： C21D8/10 ,  C21D1/28 ,  C21D8/0263 ,  C21D1/18 ,  C21D2211/002 ,  C21D2211/008 ,  C21D8/00 ,  C21D8/0273 ,  Y10S148/909

摘要： A high tensile strength, low yield ratio steel member has a steel composition consisting essentially of, by weight:C: 0.15-0.40%, Si: 0.10-0.70%, Mn: 1.0-2.7%,Cr: 1.0-3.5%, sol.Al: 0.01-0.05%,P: not larger than 0.025%, S: not larger than 0.015%,Mo: 0-1.0%, Ni: 0-2.5%,V: 0-0.10%, Ti: 0-0.10%, Nb: 0-0.10%,B: 0-0.0050%.Fe and incidental impurities: balance the below-described bainite index (%) of the steel composition being 0-50%, the steel being comprised of a single phase of martensite or a martensite and bainite duplex structure containing 50% or less of bainite.Bainite Index (%)=-209C+43Si-48Mn-58Cr-0.416R+317wherein R is a cooling rate (.degree.C./min).

摘要翻译： 高拉伸强度低屈服比的钢构件具有基本上由以下组成的钢组成：C：0.15-0.40％，Si：0.10-0.70％，Mn：1.0-2.7％，Cr：1.0-3.5％，溶胶 Al：0.01-0.05％，P：不大于0.025％，S：不大于0.015％，Mo：0-1.0％，Ni：0-2.5％，V：0-0.10％，Ti：0-0.10 ％，Nb：0〜0.10％，B：0〜0.0050％。 Fe和偶然杂质：将钢组成的下述贝氏体指数（％）平衡为0-50％，该钢由马氏体的单相或含有50％以下的贝氏体的马氏体和贝氏体双相结构构成。 贝氏体指数（％）= - 209℃+ 43Si-48Mn-58Cr-0.416R + 317其中R为冷却速度（℃/ min）。

公开(公告)号：US5994762A

公开(公告)日：1999-11-30

申请号：US686763

申请日：1996-07-26

申请人： Naokatsu Suwanai ,  Yasuhide Fujioka

发明人： Naokatsu Suwanai ,  Yasuhide Fujioka

IPC分类号： H01L23/31 ,  H01L27/108 ,  H01L23/28

CPC分类号： H01L23/3171 ,  H01L27/10897 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L24/48 ,  H01L27/10817 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01055 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/19041

摘要： A semiconductor integrated circuit device is provided in which an interlayer insulation film deposited on a semiconductor chip includes a boron-containing silicon oxide film and a second film deposited on the boron-containing silicon oxide film. A guard ring is disposed adjacent to the periphery of the semiconductor chip, and a slit is disposed between the guard ring and the periphery of the chip. The depth of the slit is selected such that cracks formed on the boundary between the BPSG film and the second film are inhibited by the slit from intruding further along the boundary to the inside of the chip, thereby preventing moisture or obstacles from reaching the inside of the chip through the cracks.

摘要翻译： 提供一种半导体集成电路器件，其中沉积在半导体芯片上的层间绝缘膜包括含硼氧化硅膜和沉积在含硼氧化硅膜上的第二膜。 保护环与半导体芯片的周围相邻设置，并且在保护环和芯片周边之间设置狭缝。 选择狭缝的深度，使得在BPSG膜和第二膜之间的边界上形成的裂纹被切口进一步沿着切屑的边界进一步侵入，从而防止水分或障碍物到达内部 芯片通过裂缝。

公开(公告)号：US20090031817A1

公开(公告)日：2009-02-05

申请号：US12176464

申请日：2008-07-21

申请人： Yasuhide Fujioka

发明人： Yasuhide Fujioka

IPC分类号： H01L21/00 ,  G01L9/02

CPC分类号： G01L9/0042

摘要： A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

摘要翻译： 提供一种半导体压力传感器，其包括隔膜，布置在隔膜的上部的电阻元件，布置在电阻元件的上表面上的绝缘膜和隔膜的上表面，穿过隔膜的一部分的通孔 并且与电阻元件接触，以及通过通孔电连接到电阻元件的布线。 绝缘膜包括具有基本平坦的底面的凹部。 布线布置在凹部的底面上，凹部的深度基本上等于布线的厚度。

公开(公告)号：US5449420A

公开(公告)日：1995-09-12

申请号：US286217

申请日：1994-08-05

申请人： Yasutaka Okada ,  Yasuhide Fujioka

发明人： Yasutaka Okada ,  Yasuhide Fujioka

IPC分类号： C21D8/00 ,  C21D1/18 ,  C21D1/28 ,  C21D8/02 ,  C21D8/10 ,  C22C38/00 ,  C22C38/18 ,  C22C38/54

CPC分类号： C21D8/10 ,  C21D1/28 ,  C21D8/0263 ,  C21D1/18 ,  C21D2211/002 ,  C21D2211/008 ,  C21D8/00 ,  C21D8/0273 ,  Y10S148/909

摘要： A high tensile strength, low yield ratio steel member has a steel composition consisting essentially of, by weight:C: 0.15-0.40%, Si: 0.10-0.70%, Mn: 1.0-2.7%,Cr: 1.0-3.5%, sol.Al: 0.01-0.05%,P: not larger than 0.025%, S: not larger than 0.015%,Mo: 0-1.0% Ni: 0-2.5%,V: 0-0.10%, Ti: 0-0.10%, Nb: 0-0.10%,B: 0-0.0050%.Fe and incidental impurities: balance the below-described bainite index (%) of the steel composition being 0-50%, the steel being comprised of a single phase of martensite or a martensite and bainite duplex structure containing 50% or less of bainite.Bainite Index (%)=-209 C+43Si-48Mn-58Cr-0.416R+317wherein R is a cooling rate (.degree.C./min).

摘要翻译： 高拉伸强度低屈服比的钢构件具有基本上由以下组成的钢组成：C：0.15-0.40％，Si：0.10-0.70％，Mn：1.0-2.7％，Cr：1.0-3.5％，溶胶 Al：0.01-0.05％，P：不大于0.025％，S：不大于0.015％，Mo：0-1.0％Ni：0-2.5％，V：0-0.10％，Ti：0-0.10％ ，Nb：0〜0.10％，B：0〜0.0050％。 Fe和偶然杂质：将钢组成的下述贝氏体指数（％）平衡为0-50％，该钢由马氏体的单相或含有50％以下的贝氏体的马氏体和贝氏体双相结构构成。 贝氏体指数（％）= - 209 C + 43Si-48Mn-58Cr-0.416R + 317其中R为冷却速度（℃/ min）。

公开(公告)号：US07987727B2

公开(公告)日：2011-08-02

申请号：US12176464

申请日：2008-07-21

申请人： Yasuhide Fujioka

发明人： Yasuhide Fujioka

IPC分类号： G01L9/02

CPC分类号： G01L9/0042

摘要： A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

摘要翻译： 提供一种半导体压力传感器，其包括隔膜，布置在隔膜的上部的电阻元件，布置在电阻元件的上表面上的绝缘膜和隔膜的上表面，穿过隔膜的一部分的通孔 并且与电阻元件接触，以及通过通孔电连接到电阻元件的布线。 绝缘膜包括具有基本平坦的底面的凹部。 布线布置在凹部的底面上，凹部的深度基本上等于布线的厚度。

公开(公告)号：US20090056463A1

公开(公告)日：2009-03-05

申请号：US12196367

申请日：2008-08-22

申请人： Yasuhide Fujioka

发明人： Yasuhide Fujioka

IPC分类号： G01L9/02 ,  H01L21/00

CPC分类号： G01L9/0054

摘要： A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

摘要翻译： 半导体压力传感器包括隔膜; 设置在隔膜的上表面上的电阻器; 形成在所述隔膜上的绝缘膜，所述电阻器具有暴露所述电阻器的顶表面的穿透部分; 以及由所述电阻器的所述顶表面形成的布线图案，所述布线图案由所述穿透部暴露于所述绝缘膜的顶表面; 其中与所述隔膜的上表面正交的平面的第一交叉部分与所述穿透部的侧面的顶端相交的第一交叉部分与所述隔膜的上表面正交的平面相交的第二交叉部分 穿透部分的侧面平均等于或大于绝缘膜的厚度乘以2的平方根。

公开(公告)号：US5684315A

公开(公告)日：1997-11-04

申请号：US362879

申请日：1994-12-23

申请人： Hiroyuki Uchiyama ,  Yoshiyuki Kaneko ,  Hiroki Soeda ,  Yasuhide Fujioka ,  Nozomu Matsuda ,  Motoko Sawamura

发明人： Hiroyuki Uchiyama ,  Yoshiyuki Kaneko ,  Hiroki Soeda ,  Yasuhide Fujioka ,  Nozomu Matsuda ,  Motoko Sawamura

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/10852 ,  H01L27/10808

摘要： A semiconductor memory device has memory cells provided at intersections between word line conductors and data line conductors. Each of the memory cells includes a cell selecting transistor and an information storage capacitor. The capacitor in each of the memory cells includes a first capacitor component formed over the control electrode of the transistor and a second capacitor component formed over a word line conductor which is adjacent to a word line conductor integral with the control electrode of the transistor. Each of the first and second capacitor components has a common electrode, a storage electrode and a dielectric film sandwiched therebetween, and the storage electrode is at a level higher than the common electrode in each of said first and second capacitor components. The storage electrodes of the first and second capacitor components are electrically connected with each other and with one of the semiconductor regions of the transistor. The other semiconductor region of the transistor is electrically connected with one of the data line conductors. Patterning of the storage electrodes of the first and second capacitor components is preferalbly effected by use of masks of a stripe pattern.

摘要翻译： 半导体存储器件具有在字线导体和数据线导体之间的交叉点处设置的存储单元。 每个存储单元包括单元选择晶体管和信息存储电容器。 每个存储单元中的电容器包括形成在晶体管的控制电极上的第一电容器部件和形成在字线导体上的第二电容器部件，该字线导体与与晶体管的控制电极成一体的字线导体相邻。 第一电容器部件和第二电容器部件中的每一个均具有公共电极，存储电极和夹在其间的电介质膜，并且在所述第一和第二电容器部件的每个中，所述存储电极处于比所述公共电极高的电平。 第一和第二电容器部件的存储电极彼此电连接并且与晶体管的半导体区域中的一个电连接。 晶体管的另一个半导体区域与数据线导体之一电连接。 第一和第二电容器部件的存储电极的图案化优选地通过使用条纹图案的掩模来实现。

公开(公告)号：US07624644B2

公开(公告)日：2009-12-01

申请号：US12196367

申请日：2008-08-22

申请人： Yasuhide Fujioka

发明人： Yasuhide Fujioka

IPC分类号： G01L9/02

CPC分类号： G01L9/0054

摘要： A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

摘要翻译： 半导体压力传感器包括隔膜; 设置在隔膜的上表面上的电阻器; 形成在所述隔膜上的绝缘膜，所述电阻器具有暴露所述电阻器的顶表面的穿透部分; 以及由所述电阻器的所述顶表面形成的布线图案，所述布线图案由所述穿透部暴露于所述绝缘膜的顶表面; 其中与所述隔膜的上表面正交的平面的第一交叉部分与所述穿透部的侧面的顶端相交的第一交叉部分与所述隔膜的上表面正交的平面相交的第二交叉部分 穿透部分的侧面平均等于或大于绝缘膜的厚度乘以2的平方根。

公开(公告)号：US6126897A

公开(公告)日：2000-10-03

申请号：US137309

申请日：1998-08-21

申请人： Kenji Aihara ,  Yasuhide Fujioka ,  Kazuhiko Yoshida ,  Tatsuhiro Goto ,  Akira Wakita

发明人： Kenji Aihara ,  Yasuhide Fujioka ,  Kazuhiko Yoshida ,  Tatsuhiro Goto ,  Akira Wakita

IPC分类号： C22C38/22 ,  C22C38/32 ,  C23C8/02 ,  C23C8/22 ,  C21D8/10 ,  C22C38/54

CPC分类号： C22C38/22 ,  C22C38/32 ,  C23C8/02 ,  C23C8/22

摘要： A carburizing steel having the following chemical composition:C: 0.1 to 0.25%,Si: 0.2 to 0.4%,Mn: 0.3 to 0.9%,P: 0.02% or less,S: 0.001 to 0.15%,Cr: 0.5 to 0.9%,Mo: 0.15 to 1%,Al: 0.01 to 0.1%,B: 0.0005 to 0.009%,N: less than 0.006%, andthe balance of Fe and incidental impurities, wherein % is on a weight basis. Also disclosed are a method for the manufacture of the carburizing steel, parts of constant velocity universal joints for drive shafts made of the carburizing steel, as well as a method for the manufacture of such parts. The carburizing steel may further contain Ni: 0.3-4.0%, and one or more elements selected from the group consisting of Ti, Nb, V and Zr: 0.01-0.3% for each. The parts of constant velocity universal joints for drive shafts are manufactured using the carburizing steel of the present invention as a material. When they are carburized and quenched, they exhibit a surface hardness (Hv) of 650-800, core hardness (Hv) of 250-450, and carburized case depth of 0.2-1.2 mm.

摘要翻译： 具有以下化学组成的渗碳钢：C：0.1〜0.25％，Si：0.2〜0.4％，Mn：0.3〜0.9％，P：0.02％以下，S：0.001〜0.15％，Cr：0.5〜0.9％ ，Mo：0.15〜1％，Al：0.01〜0.1％，B：0.0005〜0.009％，N：小于0.006％，余量为Fe和附带杂质，％为重量。 还公开了一种用于制造渗碳钢的方法，由渗碳钢制成的驱动轴的等速万向接头的部件以及制造这种部件的方法。 渗碳钢可以进一步含有Ni：0.3-4.0％，以及从Ti，Nb，V和Zr组成的组中选择的一种或多种元素：0.01-0.3％。 使用本发明的渗碳钢作为材料制造用于驱动轴的等速万向接头的部件。 当它们被渗碳淬火时，它们的表面硬度（Hv）为650-800，芯硬度（Hv）为250-450，渗碳壳深度为0.2-1.2mm。

公开(公告)号：US5853502A

公开(公告)日：1998-12-29

申请号：US694744

申请日：1996-08-09

申请人： Kenji Aihara ,  Yasuhide Fujioka ,  Kazuhiko Yoshida ,  Tatsuhiro Goto ,  Akira Wakita

发明人： Kenji Aihara ,  Yasuhide Fujioka ,  Kazuhiko Yoshida ,  Tatsuhiro Goto ,  Akira Wakita

IPC分类号： C22C38/22 ,  C22C38/32 ,  C23C8/02 ,  C23C8/22

CPC分类号： C22C38/22 ,  C22C38/32 ,  C23C8/02 ,  C23C8/22

摘要： A carburizing steel having the following chemical composition: C: 0.1 to 0.25%, Si: 0.2 to 0.4%, Mn: 0.3 to 0.9%, P: 0.02% or less, S: 0.001 to 0.15%, Cr: 0.5 to 0.9%, Mo: 0.15 to 1%, Al: 0.01 to 0.1%, B: 0.0005 to 0.009%, N: less than 0.006%, and the balance of Fe and incidental impurities, wherein % is on a weight basis. Also disclosed are a method for the manufacture of the carburizing steel, parts of constant velocity universal joints for drive shafts made of the carburizing steel, as well as a method for the manufacture of such parts. The carburizing steel may further contain Ni: 0.3-4.0%, and one or more elements selected from the group consisting of Ti, Nb, V and Zr: 0.01-0.3% for each.

摘要翻译： 具有以下化学组成的渗碳钢：C：0.1〜0.25％，Si：0.2〜0.4％，Mn：0.3〜0.9％，P：0.02％以下，S：0.001〜0.15％，Cr：0.5〜0.9％ ，Mo：0.15〜1％，Al：0.01〜0.1％，B：0.0005〜0.009％，N：小于0.006％，余量为Fe和附带杂质，％为重量。 还公开了一种用于制造渗碳钢的方法，由渗碳钢制成的驱动轴的等速万向接头的部件以及制造这种部件的方法。 渗碳钢可以进一步含有Ni：0.3-4.0％，以及从Ti，Nb，V和Zr组成的组中选择的一种或多种元素：0.01-0.3％。