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公开(公告)号：US07148551B2
公开(公告)日：2006-12-12
申请号：US10262859
申请日：2002-10-03
IPC分类号： H01L31/00
CPC分类号： H01L31/103 , H01L27/14663
摘要： A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector includes a plurality of diffusion regions of a second conductivity type comprised of a semiconductor of a second conductivity type and a diffusion region of the first conductivity type comprised of a semiconductor of the first conductivity type higher in impurity concentration than the semiconductor substrate. The diffusion regions of a second conductivity type and the diffusion region of the first conductivity type are provided on a surface opposite to the incident surface of said semiconductor substrate. Each first conductivity type semiconductor substrate side of pn junctions, formed at the area of interface between the semiconductor substrate and each of the diffusion regions of the second conductivity type, is commonly connected.
摘要翻译： 半导体能量检测器包括由第一导电类型的半导体构成的半导体衬底，预定波长范围的能量射线从入射表面入射到该半导体衬底。 半导体能量检测器包括由第二导电类型的半导体构成的第二导电类型的多个扩散区域和由比半导体衬底的杂质浓度高的第一导电类型的半导体构成的第一导电类型的扩散区域 。 第二导电类型的扩散区域和第一导电类型的扩散区域设置在与所述半导体衬底的入射表面相对的表面上。 形成在半导体衬底和第二导电类型的每个扩散区之间的界面区域的pn结的每个第一导电类型半导体衬底侧通常连接。
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公开(公告)号：US09609247B2
公开(公告)日：2017-03-28
申请号：US13144741
申请日：2010-01-22
IPC分类号： H04N5/372 , H01L27/146 , H01L27/148
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.
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公开(公告)号：US08841714B2
公开(公告)日：2014-09-23
申请号：US13979172
申请日：2011-11-11
IPC分类号： H01L31/02 , H01L27/148 , H04N5/372 , H01L27/146
CPC分类号： H01L27/14806 , H01L27/14601 , H01L27/14825 , H01L27/14831 , H04N5/37213
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
摘要翻译： 固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状 是大致矩形的形状。 感光区域7在与长边相交的第一方向上并列。 电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和 具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。
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4.发明授权Solid-state imaging device having photoelectric converting portions and first and second transfer portions 有权具有光电转换部分和第一和第二转印部分的固态成像装置公开(公告)号：US08446500B2
公开(公告)日：2013-05-21
申请号：US12990051
申请日：2009-04-22
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14831 , H01L27/14825 , H04N5/37213
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译： 固态成像装置1设置有多个光电转换部分3和第一和第二移位寄存器9,13。每个光电转换部分3具有光敏区域15，其根据光的入射产生电荷，并且具有 由两个长边和两个短边组成的近似矩形形状的平面形状以及形成沿着平行于形成感光区域15的平面形状的长边的预定方向增加的电位梯度的电位梯度形成区域17 感光区域15.多个光电转换部分3沿着与预定方向相交的方向并置。 第一移位寄存器9和第二移位寄存器13获取从各个光电转换部分3传送的电荷并沿与预定方向相交的方向传送它们以输出它们。 这实现了能够快速读出感光区域中产生的电荷的固态成像装置，而不会使图像处理复杂化。
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公开(公告)号：US08334918B2
公开(公告)日：2012-12-18
申请号：US12516411
申请日：2007-11-28
CPC分类号： H01L27/14887 , H01L27/14601 , H01L27/14656 , H04N5/335 , H04N5/3591
摘要： A solid-state image pickup device 1 includes: a plurality of photoelectric converters 2 which are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring section 6 which is provided on one side of the photoelectric converters 2 in the direction crossing the predetermined direction and transfers charges generated in the photoelectric converters 2 in the predetermined direction; an unnecessary charge discharging drain 7 which is provided adjacent to the photoelectric converter 2 along the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converter 2 from the photoelectric converter 2; and an unnecessary charge discharging gate 8 which is provided between the photoelectric converter 2 and the unnecessary charge discharging drain 7 and selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converter 2 to the unnecessary charge discharging drain 7.
摘要翻译： 固体摄像装置1包括：多个光电转换器2，其沿预定方向排列并且具有朝向与预定方向交叉的方向的一侧较高的电位; 传送部分6，其沿着与预定方向交叉的方向设置在光电转换器2的一侧上，并沿预定方向传送在光电转换器2中产生的电荷; 沿着与规定方向交叉的方向与光电转换器2相邻设置的不需要的电荷排出漏极7，并从光电转换器2放出在光电转换器2中产生的不必要的电荷; 以及设置在光电转换器2和不需要的电荷排出漏极7之间的不必要的电荷放电栅极8，并且选择性地执行切断和释放从光电转换器2到不需要的电荷排放漏极7的不必要电荷的流动。
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公开(公告)号：US20120007149A1
公开(公告)日：2012-01-12
申请号：US13258344
申请日：2010-03-25
IPC分类号： H01L31/113
CPC分类号： H04N5/37206 , H01L27/14831 , H01L27/14856 , H01L27/14887 , H01L31/113 , H04N5/3592
摘要： In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 161 to 165 are electrically connected to the OFG 5 at connecting parts 171 to 175. Therefore, when voltage values V1 to V5 applied to the connecting parts 171 to 175 by the voltage application units 161 to 165 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.
摘要翻译： 在固态成像装置1中，溢出门（OFG）5具有预定的电阻值，而施加电压单元161至165在连接部分171至175处与OFG5电连接。因此，当电压值V1 通过电压施加单元161〜165对应用于连接部171〜175的V5进行调整，OFG5可以分别在其较早和较晚的阶段部分产生较高和较低的电压值。 结果，在较早阶段和较后阶段部分中的势垒级（电位）变得越来越高，使得可以使在光电转换单元2的较早级侧区域中产生的所有电荷流出到溢出漏极 （OFD）4，由此只能在光电转换单元2的后级侧区域中产生的电荷被TDI转印。
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公开(公告)号：US20110298958A1
公开(公告)日：2011-12-08
申请号：US13147046
申请日：2010-01-22
IPC分类号： H04N5/335
CPC分类号： H01L27/14806 , H01L29/76816
摘要： A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each of the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.
摘要翻译： 根据一个实施例的固态成像装置是多端口固态成像装置，并且包括成像区域和多个单元。 成像区域包括多个像素列。 这些单元基于来自成像区域的电荷产生信号。 每个单元具有输出寄存器，多个乘法寄存器和放大器。 输出寄存器从多个像素列中的一个或多个对应的像素列传送电荷。 乘法寄存器并行提供，并从输出寄存器接收电荷，以分别产生相乘电荷。 放大器基于乘法寄存器中相乘的电荷产生信号。
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公开(公告)号：US20110266644A1
公开(公告)日：2011-11-03
申请号：US13143765
申请日：2010-02-09
申请人： Kazuhisa Yamamura , Akira Sakamoto , Terumasa Nagano , Yasuhito Miyazaki , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Kazuhisa Yamamura , Akira Sakamoto , Terumasa Nagano , Yasuhito Miyazaki , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02
CPC分类号： H01L31/0236 , H01L27/1462 , H01L27/1464 , H01L31/02327 , H01L31/035281 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetection element SP has a silicon substrate 21 comprised of a semiconductor of a first conductivity type, having a first principal surface 21a and a second principal surface 21b opposed to each other, and having a semiconductor layer 23 of a second conductivity type formed on the first principal surface 21a side; and charge transfer electrodes 25 provided on the first principal surface 21a and adapted to transfer generated charge. In the silicon substrate 21, an accumulation layer 31 of the first conductivity type having a higher impurity concentration than the silicon substrate 21 is formed on the second principal surface 21b side and an irregular asperity 10 is formed in a region opposed to at least the semiconductor region 23, in the second principal surface 21b. The region where the irregular asperity 10 is formed in the second principal surface 21b of the silicon substrate 21 is optically exposed.
摘要翻译： 半导体光检测元件SP具有由第一导电类型的半导体构成的硅基板21，第一导电类型的半导体具有彼此相对的第一主表面21a和第二主表面21b，并且具有第二导电类型的半导体层23形成在 第一主表面21a侧; 以及设置在第一主表面21a上并适于传送产生的电荷的电荷转移电极25。 在硅基板21中，在第二主面21b侧形成有比硅基板21高的杂质浓度的第一导电类型的累积层31，并且在与至少半导体相对的区域中形成不规则的凹凸10 区域23，在第二主表面21b中。 在硅衬底21的第二主表面21b中形成不规则凹凸10的区域被光学曝光。
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公开(公告)号：US20110254989A1
公开(公告)日：2011-10-20
申请号：US13139855
申请日：2010-01-22
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/148
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, a multiplication register unit 40 that multiplies the charge from the output register 20, and at least one charge dispersion means 71 that disperses the charge input to the multiplication register unit 40 in a width direction perpendicular to a transfer direction.
摘要翻译： 根据本发明的一个实施例的固态成像装置1是电荷倍增固态成像装置，并且包括根据入射光量产生电荷的成像区域10，接收到的输出寄存器单元20 来自成像区域10的电荷，将来自输出寄存器20的电荷相乘的乘法寄存器单元40和至少一个电荷分散单元71，其将电荷输入分散到垂直于转移的宽度方向的倍增寄存器单元40 方向。
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公开(公告)号：US20110186913A1
公开(公告)日：2011-08-04
申请号：US12920119
申请日：2010-01-27
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/1464 , H01L27/14812 , H01L27/1485 , H01L29/76816
摘要： In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).
摘要翻译： 在具有电子倍增功能的固态成像装置中，在与乘法寄存器EM的电子转移方向垂直的截面中，绝缘层2在两侧部比在中央区域更厚。 在N型半导体区域1C的中心区域和两侧部分之间的边界处形成一对溢流漏极1N。 每个溢流漏极1N沿乘法寄存器EM的电子传输方向延伸。 溢流栅电极G从绝缘层2的薄部延伸到厚部。溢流栅电极G沿纵向方向设置在每个转移电极8的两端之间，绝缘层2也起到屏蔽作用 每个电极8（8A和8B）的电极。
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