公开(公告)号：US09015658B2

公开(公告)日：2015-04-21

申请号：US13607087

申请日：2012-09-07

申请人： Yasunori Hashimoto ,  Ryota Mibe ,  Shuhei Nojiri ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi ,  Kentaro Yoshimura

发明人： Yasunori Hashimoto ,  Ryota Mibe ,  Shuhei Nojiri ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi ,  Kentaro Yoshimura

IPC分类号： G06F9/44

CPC分类号： G06F8/30 ,  G06F8/36

摘要： A device and method automatically generate a program for buffering differences based on characteristics of a component. A buffer program for buffering differences of the way to use a component during different software environments is automatically generated. The device includes a controller for executing automatic generation of the buffer program, a memory including control information and a processing program, an input device for inputting the processing content of the component, and an output device for outputting the automatically generated buffer program. The memory records a plurality of forms for buffering the component as the control information and the controller extracts characteristic information based on the processing content of the component and records the extracted characteristic information as control information in the memory, selects a specified form based on the characteristic information, and generates the buffer program based on the selected form and the characteristic information.

摘要翻译： 设备和方法基于组件的特性自动生成用于缓冲差异的程序。 自动生成用于缓冲在不同软件环境中使用组件的方式差异的缓冲程序。 该装置包括用于执行缓冲器程序的自动生成的控制器，包括控制信息和处理程序的存储器，用于输入部件的处理内容的输入装置，以及用于输出自动生成的缓冲器程序的输出装置。 存储器记录用于缓存部件的多个形式作为控制信息，并且控制器基于部件的处理内容提取特征信息，并将所提取的特征信息作为控制信息记录在存储器中，基于特性选择指定的形式 信息，并且基于所选择的形式和特征信息生成缓冲器程序。

公开(公告)号：US20130125091A1

公开(公告)日：2013-05-16

申请号：US13607087

申请日：2012-09-07

申请人： Yasunori Hashimoto ,  Ryota Mibe ,  Shuhei Nojiri ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi ,  Kentaro Yoshimura

发明人： Yasunori Hashimoto ,  Ryota Mibe ,  Shuhei Nojiri ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi ,  Kentaro Yoshimura

IPC分类号： G06F9/44

CPC分类号： G06F8/30 ,  G06F8/36

摘要： A device and method automatically generate a program for buffering differences based on characteristics of a component. A buffer program for buffering differences of the way to use a component during different software environments is automatically generated. The device includes a controller for executing automatic generation of the buffer program, a memory including control information and a processing program, an input device for inputting the processing content of the component, and an output device for outputting the automatically generated buffer program. The memory records a plurality of forms for buffering the component as the control information and the controller extracts characteristic information based on the processing content of the component and records the extracted characteristic information as control information in the memory, selects a specified form based on the characteristic information, and generates the buffer program based on the selected form and the characteristic information.

摘要翻译： 设备和方法基于组件的特性自动生成用于缓冲差异的程序。 自动生成用于缓冲在不同软件环境中使用组件的方式差异的缓冲程序。 该装置包括用于执行缓冲器程序的自动生成的控制器，包括控制信息和处理程序的存储器，用于输入部件的处理内容的输入装置，以及用于输出自动生成的缓冲器程序的输出装置。 存储器记录用于缓存部件的多个形式作为控制信息，并且控制器基于部件的处理内容提取特征信息，并将所提取的特征信息作为控制信息记录在存储器中，基于特性选择指定的形式 信息，并且基于所选择的形式和特征信息生成缓冲器程序。

公开(公告)号：US20120266131A1

公开(公告)日：2012-10-18

申请号：US13368717

申请日：2012-02-08

申请人： Shuhei Nojiri ,  Ryota Mibe ,  Yasunori Hashimoto ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi

发明人： Shuhei Nojiri ,  Ryota Mibe ,  Yasunori Hashimoto ,  Sadahiro Ishikawa ,  Kiyoshi Yamaguchi

IPC分类号： G06F9/44

CPC分类号： G06F8/38 ,  G06F8/30

摘要： The present invention is provided to apply a screen mockup developed for prototyping, without any modification, to actual product development for which the architecture differs. An automatic program generation device has: a storage part 170 for storing a screen mockup program 1720, a component setup file 1730, and execution architecture definition information 1760, a storage part 160 for storing component data, a mockup design information analysis part 110 for generating component design information from the screen mockup program 1720 and the component setup file 1730 and configuring a program execution infrastructure from the execution architecture definition information 1760, a component architecture decision part 130 for selecting on the basis of the component design information a program code fragment, which operates on the configured program execution infrastructure, and a program code generation part 140 for generating a program code from the selected program code fragment.

摘要翻译： 提供本发明用于将开发用于原型开发的屏幕模型应用于实际的产品开发，而不需要任何修改。 自动程序生成装置具有：用于存储画面模拟程序1720的存储部分170，组件设置文件1730和执行体系结构定义信息1760，用于存储组件数据的存储部分160，用于生成组件数据的模型设计信息分析部件110 来自屏幕样机程序1720和组件设置文件1730的组件设计信息和从执行架构定义信息1760配置程序执行基础设施，组件架构判定部分130，用于基于组件设计信息选择程序代码片段， 其在配置的程序执行基础设施上运行，以及用于从所选择的程序代码片段生成程序代码的程序代码生成部分140。

公开(公告)号：US07718502B2

公开(公告)日：2010-05-18

申请号：US11984167

申请日：2007-11-14

申请人： Kimihiko Yamashita ,  Yasunori Hashimoto

发明人： Kimihiko Yamashita ,  Yasunori Hashimoto

IPC分类号： H01L29/72

CPC分类号： H01C17/075 ,  H01C7/006 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at bottom regions of the connection holes. The connection holes are arranged with a space there-between. The thin-metal-film resistor element is formed on the insulating film and extending to continuously overlay and contact surfaces of the insulating film, inner walls of the connection holes, and the wiring pattern at the bottom regions of the connection holes.

摘要翻译： 半导体装置包括布线图案，绝缘膜和薄金属膜电阻元件。 绝缘膜形成在具有垂直贯穿其中的连接孔的布线图案上，以暴露连接孔的底部区域的布线图案的一部分。 连接孔之间具有空间。 金属薄膜电阻元件形成在绝缘膜上并延伸到绝缘膜，连接孔的内壁和连接孔的底部区域的布线图案的连续覆盖和接触。

公开(公告)号：US20060027892A1

公开(公告)日：2006-02-09

申请号：US11060753

申请日：2005-08-16

申请人： Kimihiko Yamashita ,  Yasunori Hashimoto

发明人： Kimihiko Yamashita ,  Yasunori Hashimoto

IPC分类号： H01L29/00

CPC分类号： H01L23/5228 ,  H01L21/76805 ,  H01L21/76843 ,  H01L27/0802 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device equipped with a metal thin film resistor is disclosed. The semiconductor device includes a second interlayer insulating film formed on a first interlayer insulating film including a formation area of a wiring pattern. Connecting holes are formed in the second interlayer insulating film corresponding to both ends of the metal thin film resistor and the wiring pattern. An upper part of each connecting hole is formed in a taper shape. A sidewall is formed on the inner wall of each connecting hole. The metal thin film resistor is formed on the second interlayer insulating film between the connecting holes, inside of each connecting hole, and on the wiring pattern.

摘要翻译： 公开了一种配备有金属薄膜电阻器的半导体器件。 半导体器件包括形成在包括布线图案的形成区域的第一层间绝缘膜上的第二层间绝缘膜。 在与金属薄膜电阻器的两端对应的第二层间绝缘膜和布线图案中形成连接孔。 每个连接孔的上部形成为锥形。 在每个连接孔的内壁上形成侧壁。 金属薄膜电阻器形成在第二层间绝缘膜之间的连接孔之间，每个连接孔内部和布线图案之间。

公开(公告)号：US5351137A

公开(公告)日：1994-09-27

申请号：US159206

申请日：1993-11-30

申请人： Masami Kato ,  Takao Kato ,  Yasunori Hashimoto

发明人： Masami Kato ,  Takao Kato ,  Yasunori Hashimoto

IPC分类号： H04N1/40 ,  H04N1/405 ,  G06K9/00

CPC分类号： H04N1/40075 ,  H04N1/40062 ,  H04N1/40068 ,  H04N1/4052

摘要： In a pixel density converting apparatus according to the present invention, a pixel density conversion element for converting a pixel density by a factor of an arbitrary value, such as an element of the projection method or the linear interpolation method, a pixel density conversion element for increasing or decreasing a pixel density by a factor of an integer, such as an element of the majority or logical OR method, and a binarization element for conducting binarization while correcting quantizing errors, such as an element of the error diffusion method or the average error minimizing method, are combined with each other with the advantages and disadvantages of the respective elements taken into consideration, so as to achieve excellent conversion whether or not the image on which pixel density conversion is conducted or an image area is a pseudo half-tone processed image. In consequence, excellent pixel density conversion is achieved on a binary image in which a pseudo half-tone processed image and characters or line drawings are present in a mixed state.

摘要翻译： 在根据本发明的像素密度转换装置中，像素密度转换元件用于将诸如投影方法的元素或线性内插法的任意值的像素密度的像素密度转换成像素密度转换元件， 增加或减少像素密度乘以整数因子，例如大多数或逻辑OR方法的元素，以及用于在校正量化误差的同时进行二值化的二值化元素，例如误差扩散方法的元素或平均误差 最小化方法相互结合，考虑到各个元件的优点和缺点，以便无论进行像素密度转换的图像还是图像区域都是伪半色调处理，实现优异的转换 图片。 因此，在混合状态下存在伪半色调处理的图像和字符或线图的二进制图像上实现了优异的像素密度转换。

公开(公告)号：US5321523A

公开(公告)日：1994-06-14

申请号：US758214

申请日：1991-09-12

申请人： Yasunori Hashimoto

发明人： Yasunori Hashimoto

IPC分类号： H04N1/405 ,  H04N1/40

CPC分类号： H04N1/4055

摘要： An image processing apparatus displaying an identification performance between the image of half-tone and an image of tone other than the half-tone includes a device for correcting the characteristics of the input image signal and an identifying device capable of identifying whether the input image signal is the half-tone image or not without use of the image signal whose characteristics have been corrected. In accordance with the result of the identification performed by this identifying device, an output image signal is selected.

摘要翻译： 显示半色调图像与半色调以外的色调图像之间的识别性能的图像处理装置包括用于校正输入图像信号的特性的装置和能够识别输入图像信号 是不使用其特性已被校正的图像信号的半色调图像。 根据由该识别装置执行的识别结果，选择输出图像信号。

公开(公告)号：US07741676B2

公开(公告)日：2010-06-22

申请号：US11904917

申请日：2007-09-27

申请人： Yasunori Hashimoto

发明人： Yasunori Hashimoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/435 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/7809 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor apparatus includes a cell section including at least two transistors. A layer interval insulation coat is formed at least overlying the gate electrode use polysilicon and the gate contact use polysilicon. A source electrode metal coat is formed overlying the semiconductor substrate and insulated from the gate electrode use polysilicon and the gate contact use polysilicon, and is electrically connected to the body diffusion layer and the source diffusion layer. A gate use connection hole is formed on the layer interval insulation coat overlying the gate contact use polysilicon. The gate use connection hole has a width larger than that of the trench. A gate electrode metal coat is formed on the gate use connection hole and the layer interval insulation coat. The polysilicon coat is formed at the same level or lower than the surface of the semiconductor substrate.

摘要翻译： 半导体装置包括具有至少两个晶体管的单元部分。 层间隔绝缘涂层形成为至少覆盖栅极使用多晶硅并且栅极接触使用多晶硅。 源极电极金属涂层形成在半导体衬底上并与栅电极绝缘使用多晶硅，栅极接触使用多晶硅，并且电连接到体扩散层和源极扩散层。 在覆盖栅极接触多晶硅的层间绝缘涂层上形成栅极使用连接孔。 栅极使用连接孔的宽度大于沟槽的宽度。 在栅极使用连接孔和层间绝缘层上形成栅电极金属涂层。 多晶硅涂层形成在与半导体衬底的表面相同或更低的相同的水平面上。

公开(公告)号：US07202549B2

公开(公告)日：2007-04-10

申请号：US10848384

申请日：2004-05-19

申请人： Yasunori Hashimoto ,  Kimihiko Yamashita

发明人： Yasunori Hashimoto ,  Kimihiko Yamashita

IPC分类号： H01L29/00

CPC分类号： H01L28/20 ,  H01L27/0611 ,  H01L27/0802

摘要： A semiconductor device, a method for manufacturing the semiconductor device, and an integrated circuit including the semiconductor device are disclosed. The semiconductor device includes a substrate section, a resistor formed on the substrate section, a metal pattern formed on the resistor, an oxide pattern formed on the metal pattern, and a protective film covering the resistor, the metal pattern and the oxide pattern. With this structure, the metal pattern sufficiently prevents formation of an oxide film on a surface of the resistor even when dry ashing or dry etching is performed in the manufacturing process.

摘要翻译： 公开了半导体器件，半导体器件的制造方法和包括半导体器件的集成电路。 该半导体装置包括基板部，形成在基板部上的电阻，形成在电阻上的金属图案，形成在金属图案上的氧化物图案，以及覆盖电阻，金属图案和氧化物图案的保护膜。 通过这种结构，即使在制造过程中进行干法灰化或干法蚀刻，金属图案也充分地防止了在电阻器的表面上形成氧化膜。

公开(公告)号：US20050212085A1

公开(公告)日：2005-09-29

申请号：US11059725

申请日：2005-02-17

申请人： Yasunori Hashimoto ,  Kimihiko Yamashita

发明人： Yasunori Hashimoto ,  Kimihiko Yamashita

IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/525 ,  H01L27/01 ,  H01L27/04 ,  H01L29/00

CPC分类号： H01L27/0802 ,  H01L23/5228 ,  H01L27/016 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: an insulating film; a metal thin-film resistance element; a wiring pattern formed on the insulating film, a part of which forms an electrode for electrically connecting with the metal thin-film resistance element; and a side wall produced at least on a side surface of the electrode of the wiring pattern, and made of an insulation material, wherein: the metal thin-film resistance element is produced across a top surface of the electrode and a surface of the insulating film via a surface of the side wall.

摘要翻译： 半导体器件包括：绝缘膜; 金属薄膜电阻元件; 形成在所述绝缘膜上的布线图形，其一部分形成用于与所述金属薄膜电阻元件电连接的电极; 以及至少在所述布线图案的电极的侧面上形成的侧壁，并且由绝缘材料制成，其中：所述金属薄膜电阻元件跨越所述电极的顶表面和所述绝缘体的表面 膜通过侧壁的表面。