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1.发明授权公开(公告)号：US08715432B2
公开(公告)日：2014-05-06
申请号：US12452200
申请日：2009-03-24
CPC分类号： C22C38/24 , C21D8/02 , C21D8/0205 , C21D9/46 , C21D9/50 , C21D2211/002 , C21D2211/004 , C21D2211/005 , C21D2211/008 , C22C38/001 , C22C38/06 , C22C38/26
摘要： The present invention provides high temperature strength and fire-resistant steel superior in weld joint reheat embrittlement resistance and toughness which is produced using steel of a room temperature strength of the 400 to 600N/mm2 class containing as main ingredients C: 0.010% to less than 0.05%, Si: 0.01 to 0.50%, Mn: 0.80 to 2.00%, Cr: 0.50% to less than 2.00%, V: 0.03 to 0.30%, Nb: 0.01 to 0.10%, N: 0.001 to 0.010%, and Al: 0.005 to 0.10%, limiting the contents of Ni, Cu, Mo, and B, and satisfying the relationship of 4Cr[%]-5Mo[%]-10Ni[%]-2Cu[%]-Mn[%]>0.
摘要翻译： 本发明提供一种高温强度和耐焊接性优异的焊接再热脆化性和韧性，其使用室温强度为400〜600N / mm2级的钢作为主要成分C：0.010〜小于 0.05％，Si：0.01〜0.50％，Mn：0.80〜2.00％，Cr：0.50％〜小于2.00％，V：0.03〜0.30％，Nb：0.01〜0.10％，N：0.001〜0.010％ ：0.005〜0.10％，限制Ni，Cu，Mo和B的含量，满足4Cr [％] -5Mo [％] -10Ni [％] -2Cu [％] -Mn [％]> 0的关系 。
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2.发明申请公开(公告)号：US20100132855A1
公开(公告)日：2010-06-03
申请号：US12452200
申请日：2009-03-24
CPC分类号： C22C38/24 , C21D8/02 , C21D8/0205 , C21D9/46 , C21D9/50 , C21D2211/002 , C21D2211/004 , C21D2211/005 , C21D2211/008 , C22C38/001 , C22C38/06 , C22C38/26
摘要： The present invention provides high temperature strength and fire-resistant steel superior in weld joint reheat embrittlement resistance and toughness which is produced using steel of a room temperature strength of the 400 to 600N/mm2 class containing as main ingredients C: 0.010% to less than 0.05%, Si: 0.01 to 0.50%, Mn: 0.80 to 2.00%, Cr: 0.50% to less than 2.00%, V: 0.03 to 0.30%, Nb: 0.01 to 0.10%, N: 0.001 to 0.010%, and Al: 0.005 to 0.10%, limiting the contents of Ni, Cu, Mo, and B, and satisfying the relationship of 4Cr[%]-5Mo[%]-10Ni[%]-2Cu[%]-Mn[%]>0.
摘要翻译： 本发明提供一种高温强度和耐焊接性优异的焊接再热脆化性和韧性，其使用室温强度为400〜600N / mm2级的钢作为主要成分C：0.010〜小于 0.05％，Si：0.01〜0.50％，Mn：0.80〜2.00％，Cr：0.50％〜小于2.00％，V：0.03〜0.30％，Nb：0.01〜0.10％，N：0.001〜0.010％ ：0.005〜0.10％，限制Ni，Cu，Mo和B的含量，满足4Cr [％] -5Mo [％] -10Ni [％] -2Cu [％] -Mn [％]> 0的关系 。
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3.发明申请公开(公告)号：US20110002808A1
公开(公告)日：2011-01-06
申请号：US12736153
申请日：2009-10-15
IPC分类号： C22C38/00 , C21D8/00 , C22C38/20 , C22C38/18 , C22C38/12 , C22C38/22 , C22C38/08 , C22C38/32 , B21B27/06
CPC分类号： C22C38/02 , C21D1/25 , C21D8/0226 , C21D9/50 , C21D2211/005 , C21D2211/008 , C22C38/001 , C22C38/04 , C22C38/06 , C22C38/26 , C22C38/28
摘要： The present invention provides a fire-resistant steel material superior in weld heat affected zone reheat embrittlement resistance and low temperature toughness when welded by large heat input and exposed to fire and a method of production of the same, that is, a material containing C: 0.012 to 0.050%, Mn: 0.80 to 2.00%, Cr: 0.80 to 1.90%, and Nb: 0.01 to less than 0.05%, restricting Cu to 0.10% or less, containing suitable quantities of Si, N, Ti, and Al, restricting the contents of Mo, B, P, S, and O, and having a balance of Fe and unavoidable impurities, having contents of C, Mn, Cr, Nb, and Cu satisfying −1200C−20Mn+30Cr−330Nb−120Cu≧−80, having a steel structure as observed by an optical microscope of an area fraction of 80% or more of a ferrite phase, and having a balance of the steel structure of a bainite phase, martensite phase, and mixed martensite-austenite structure.
摘要翻译： 本发明提供一种在大热输入焊接并暴露于火中时，焊接热影响区域再热脆化性和低温韧性优异的耐火钢材及其制造方法，即含有C： 0.012〜0.050％，Mn：0.80〜2.00％，Cr：0.80〜1.90％，Nb：0.01〜小于0.05％，限制Cu为0.10％以下，含有适量的Si，N，Ti，Al， 含有满足-1200C-20Mn + 30Cr-330Nb-120Cu≥C的含有C，Mn，Cr，Nb和Cu的Fe和不可避免的杂质的余量的Mo，B，P，S和O的含量。 -80，具有通过光学显微镜观察到的铁素体相的80％以上的面积分率的钢结构，并且具有贝氏体相，马氏体相和混合马氏体 - 奥氏体组织的钢结构的平衡。
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公开(公告)号：US08017901B2
公开(公告)日：2011-09-13
申请号：US12440178
申请日：2007-09-05
IPC分类号： H01J40/14
CPC分类号： G01J1/46 , H01L27/14609 , H04N5/3575 , H04N5/378
摘要： A photodetecting device 1 includes a photodiode PDm,n, a switch SWm,n for the photodiode, an integrating circuit 12m, and a noise removing circuit 13m. The integrating circuit 12m accumulates in a capacitor Cfk an electric charge input from the photodiode PDm,n through the switch SWm,n for the photodiode, and outputs a voltage value according to the amount of the accumulated electric charge. The noise removing circuit 13m includes an amplifier A3, five switches SW31 to SW35, four capacitors C31 to C34, and a power supply V3. The noise removing circuit 13m takes in a voltage value that is output from the integrating circuit 12m at a time where the switch SW31 is first turned from a closed state to an open state, and after the time, outputs a voltage value according to a difference between the voltage value that is output from the integrating circuit 12m and the voltage value previously taken in.
摘要翻译： 光检测器件1包括光电二极管PDm，n，用于光电二极管的开关SWm，n，积分电路12m和噪声去除电路13m。 积分电路12m通过用于光电二极管的开关SWm，n累积从光电二极管PDm，n输入的电荷的电容器Cfk，并输出与累积电荷量相对应的电压值。 噪声消除电路13m包括放大器A3，五个开关SW31至SW35，四个电容器C31至C34以及电源V3。 噪声消除电路13m在开关SW31首先从闭合状态转为断开状态时从积分电路12m输出的电压值，并且在此之后，输出根据差分的电压值 在从积分电路12m输出的电压值与之前采用的电压值之间。
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公开(公告)号：US20100108862A1
公开(公告)日：2010-05-06
申请号：US12440178
申请日：2007-09-05
IPC分类号： G01J1/44
CPC分类号： G01J1/46 , H01L27/14609 , H04N5/3575 , H04N5/378
摘要： A photodetecting device 1 includes a photodiode PDm,n, a switch SWm,n for the photodiode, an integrating circuit 12m, and a noise removing circuit 13m. The integrating circuit 12m accumulates in a capacitor Cfk an electric charge input from the photodiode PDm,n through the switch SWm,n for the photodiode, and outputs a voltage value according to the amount of the accumulated electric charge. The noise removing circuit 13m includes an amplifier A3, five switches SW31 to SW35, four capacitors C31 to C34, and a power supply V3. The noise removing circuit 13m takes in a voltage value that is output from the integrating circuit 12m at a time where the switch SW31 is first turned from a closed state to an open state, and after the time, outputs a voltage value according to a difference between the voltage value that is output from the integrating circuit 12m and the voltage value previously taken in.
摘要翻译： 光检测器件1包括光电二极管PDm，n，用于光电二极管的开关SWm，n，积分电路12m和噪声去除电路13m。 积分电路12m通过用于光电二极管的开关SWm，n累积从光电二极管PDm，n输入的电荷的电容器Cfk，并输出与累积电荷量相对应的电压值。 噪声消除电路13m包括放大器A3，五个开关SW31至SW35，四个电容器C31至C34以及电源V3。 噪声消除电路13m在开关SW31首先从闭合状态转为断开状态时从积分电路12m输出的电压值，并且在此之后，输出根据差分的电压值 在从积分电路12m输出的电压值与之前采用的电压值之间。
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公开(公告)号：US07834798B2
公开(公告)日：2010-11-16
申请号：US12440167
申请日：2007-09-05
IPC分类号： H03M1/12
CPC分类号： H03M1/0682 , H01L27/14609 , H03M1/0604 , H03M1/468 , H04N5/378
摘要： The A/D converting circuit 20 is provided with a differential amplifying portion 21, a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23, a connection controlling portion 24, a first feedback portion 25A and a second feedback portion 25B. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portion 21 are converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23 and a connection controlling portion 24) and output. A difference in potential between the first common point P1 and the second common point P2 is fed back to the differential amplifying portion 21 by the first feedback portion 25A and the second feedback portion 25B, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.
摘要翻译： A / D转换电路20具有差分放大部分21，第一可变电容部分22A，第二可变电容部分22B，比较部分23，连接控制部分24，第一反馈部分25A和第二反馈 部分25B。 从差分放大部分21的第一输出端和第二输出端输出的差分信号的电压值通过逐次逼近型A / D转换电路（由第一可变电容部分 22A，第二可变电容部分22B，比较部分23和连接控制部分24）并输出。 第一公共点P1和第二公共点P2之间的电位差通过第一反馈部分25A和第二反馈部分25B被反馈到差分放大部分21，并且由第一反馈部分25A和第二反馈部分25B再次转换成6位数字值 逐次逼近型A / D转换电路和输出。
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公开(公告)号：US20100194621A1
公开(公告)日：2010-08-05
申请号：US12440167
申请日：2007-09-05
IPC分类号： H03M1/12
CPC分类号： H03M1/0682 , H01L27/14609 , H03M1/0604 , H03M1/468 , H04N5/378
摘要： The A/D converting circuit 20 is provided with a differential amplifying portion 21, a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23, a connection controlling portion 24, a first feedback portion 25A and a second feedback portion 25B. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portion 21 are converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23 and a connection controlling portion 24) and output. A difference in potential between the first common point P1 and the second common point P2 is fed back to the differential amplifying portion 21 by the first feedback portion 25A and the second feedback portion 25B, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.
摘要翻译： A / D转换电路20具有差分放大部分21，第一可变电容部分22A，第二可变电容部分22B，比较部分23，连接控制部分24，第一反馈部分25A和第二反馈 部分25B。 从差分放大部分21的第一输出端和第二输出端输出的差分信号的电压值通过逐次逼近型A / D转换电路（由第一可变电容部分 22A，第二可变电容部分22B，比较部分23和连接控制部分24）并输出。 第一公共点P1和第二公共点P2之间的电位差通过第一反馈部分25A和第二反馈部分25B被反馈到差分放大部分21，并且由第一反馈部分25A和第二反馈部分25B再次转换成6位数字值 逐次逼近型A / D转换电路和输出。
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公开(公告)号：US20070242151A1
公开(公告)日：2007-10-18
申请号：US10586971
申请日：2005-01-21
IPC分类号： G02B13/16
CPC分类号： H04N5/341 , H01L27/14603 , H04N5/335 , H04N5/374
摘要： The present invention relates to a solid-state image pickup apparatus which allows, when being applied as an element of a solid-state image pickup array, to reduce a non-sensitive region between the adjacent devices, and can thus obtain more accurate imaging results. The solid-state image pickup apparatus comprises a photodetecting section, an output section, a row selecting section, and a column selecting section, and further comprises M waveform shaping circuits as waveform shaping means for shaping the waveforms of row selecting signals. A row selecting signal outputted from the row selecting section is shaped by the waveform shaping circuit and is then inputted into N pixels that constitute an mth row of the photodetecting section.
摘要翻译： 固态摄像装置技术领域本发明涉及一种固态摄像装置，其能够作为固体摄像阵列的元件而被使用，以减少相邻装置之间的非敏感区域，从而可以获得更准确的成像结果 。 固体摄像装置包括光检测部分，输出部分，行选择部分和列选择部分，并且还包括M个波形整形电路，作为对行选择信号的波形进行整形的波形整形装置。 从行选择部分输出的行选择信号由波形整形电路整形，然后被输入到构成光电检测部分第m行的N个像素中。
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公开(公告)号：US07973844B2
公开(公告)日：2011-07-05
申请号：US10586971
申请日：2005-01-21
CPC分类号： H04N5/341 , H01L27/14603 , H04N5/335 , H04N5/374
摘要： The present invention relates to a solid-state image pickup apparatus which allows, when being applied as an element of a solid-state image pickup array, to reduce a non-sensitive region between the adjacent devices, and can thus obtain more accurate imaging results. The solid-state image pickup apparatus comprises a photodetecting section, an output section, a row selecting section, and a column selecting section, and further comprises M waveform shaping circuits as waveform shaping means for shaping the waveforms of row selecting signals. A row selecting signal outputted from the row selecting section is shaped by the waveform shaping circuit and is then inputted into N pixels that constitute an mth row of the photodetecting section.
摘要翻译： 固态摄像装置技术领域本发明涉及一种固态摄像装置，其能够作为固体摄像阵列的元件而被使用，以减少相邻装置之间的非敏感区域，从而可以获得更准确的成像结果 。 固体摄像装置包括光检测部分，输出部分，行选择部分和列选择部分，并且还包括M个波形整形电路，作为对行选择信号的波形进行整形的波形整形装置。 从行选择部分输出的行选择信号由波形整形电路整形，然后被输入到构成光电检测部分第m行的N个像素中。
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