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1.发明授权公开(公告)号：US06787420B2
公开(公告)日：2004-09-07
申请号：US09906557
申请日：2001-07-16
IPC分类号： H01L21336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/7395
摘要： This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
摘要翻译： 本发明澄清了参数的影响，并且能够批量生产具有在导通状态下导通电并且耗尽OFF状态的并联pn层构成的漂移层的超结半导体器件。 n个漂移区域中的杂质量在p分配区域中的杂质量的100％至150％之间或110％至150％的范围内。 n个漂移区域和p个分割区域中的任一个的杂质浓度在其他区域的杂质浓度的92％〜108％的范围内。 此外，n个漂移区域和p个分割区域中的任一个的宽度在其他区域的宽度的94％和106％之间的范围内。
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2.发明授权公开(公告)号：US06291856B1
公开(公告)日：2001-09-18
申请号：US09438078
申请日：1999-11-10
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/7395
摘要： This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
摘要翻译： 本发明澄清了参数的影响，并且能够批量生产具有在导通状态下导通电并且耗尽OFF状态的并联pn层构成的漂移层的超结半导体器件。 n个漂移区域中的杂质量在p分配区域中的杂质量的100％至150％之间或110％至150％的范围内。 n个漂移区域和p个分割区域中的任一个的杂质浓度在其他区域的杂质浓度的92％〜108％的范围内。 此外，n个漂移区域和p个分割区域中的任一个的宽度在其他区域的宽度的94％和106％之间的范围内。
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公开(公告)号：US07276771B2
公开(公告)日：2007-10-02
申请号：US11473886
申请日：2006-06-23
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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公开(公告)号：US06221688B1
公开(公告)日：2001-04-24
申请号：US09386058
申请日：1999-08-30
IPC分类号： H01L2100
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为漂移层电阻率的{分数（1/100）}，阳极区域的厚度小于环形区域的扩散深度。
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公开(公告)号：US06383836B2
公开(公告)日：2002-05-07
申请号：US09793052
申请日：2001-02-26
IPC分类号： H01L2100
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为漂移层电阻率的{分数（1/100）}，阳极区域的厚度小于环形区域的扩散深度。
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公开(公告)号：US20060244006A1
公开(公告)日：2006-11-02
申请号：US11473886
申请日：2006-06-23
IPC分类号： H01L29/74
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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公开(公告)号：US06975013B2
公开(公告)日：2005-12-13
申请号：US10262699
申请日：2002-10-02
IPC分类号： H01L29/872 , H01L21/329 , H01L29/47 , H01L29/861 , H01L27/095 , H01L29/812 , H01L31/07
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为漂移层电阻率的1/100，阳极区域的厚度小于环形区域的扩散深度。
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公开(公告)号：US20050151219A1
公开(公告)日：2005-07-14
申请号：US11072868
申请日：2005-03-04
IPC分类号： H01L29/872 , H01L21/329 , H01L29/47 , H01L29/861 , H01L27/095 , H01L21/00
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为{分数（漂移层的电阻率的1/100，阳极区域的厚度小于环形区域的扩散深度）。
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公开(公告)号：US07187054B2
公开(公告)日：2007-03-06
申请号：US11072868
申请日：2005-03-04
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为漂移层电阻率的1/100，阳极区域的厚度小于环形区域的扩散深度。
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公开(公告)号：US07112865B2
公开(公告)日：2006-09-26
申请号：US11071650
申请日：2005-03-03
IPC分类号： H01L27/95
CPC分类号： H01L29/66136 , H01L29/0619 , H01L29/0692 , H01L29/36 , H01L29/417 , H01L29/66143 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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