公开(公告)号：US20090108420A1

公开(公告)日：2009-04-30

申请号：US12257790

申请日：2008-10-24

申请人： Yasutaka OKURA ,  Tomio IWASAKI ,  Takeshi TERASAKI

发明人： Yasutaka OKURA ,  Tomio IWASAKI ,  Takeshi TERASAKI

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/49582 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/78301 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01049 ,  H01L2924/01005

摘要： A technique capable of preventing whiskers which are generated in a plating film formed on the surface of each of leads of a semiconductor device is provided. Particularly, a technique capable of preventing generation of whiskers in a plating film containing tin as a primary material and not containing lead is provided. The plating film formed on the surface of the lead is formed so that a particular plane orientation among plane orientations of tin constituting the plating film is parallel to the surface of the lead. Specifically, the plating film is formed so that the (001) plane of tin is parallel to the surface of the lead. Thus, the coefficient of thermal expansion of tin constituting the plating film can be made to be lower than a coefficient of thermal expansion of the copper constituting the lead.

摘要翻译： 提供了能够防止在半导体器件的每个引线的表面上形成的电镀膜中产生的晶须的技术。 特别地，提供了能够防止在含锡作为主要材料并且不含铅的镀膜中产生晶须的技术。 形成在引线表面上的镀膜形成为使得构成镀膜的锡的平面取向之间的特定平面取向平行于引线的表面。 具体而言，形成镀膜，使得锡的（001）面平行于引线的表面。 因此，可以使构成镀膜的锡的热膨胀系数低于构成铅的铜的热膨胀系数。

公开(公告)号：US20100052139A1

公开(公告)日：2010-03-04

申请号：US12541206

申请日：2009-08-14

申请人： Tomio IWASAKI

发明人： Tomio IWASAKI

IPC分类号： H01L23/31 ,  H01L21/3205 ,  H01L21/78

CPC分类号： H01L23/49582 ,  H01L23/3142 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/451 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00012

摘要： There is provided a semiconductor device which has been improved in adhesion between leads and a sealing resin (molding resin), and thus does not undergo peeling therebetween, and has high reliability.The semiconductor device includes a semiconductor chip, a plurality of leads including a metal as a main constitutional material, electrically connected with the semiconductor chip, and a resin for sealing the semiconductor chip, wherein the plurality of leads each have an outer lead portion exposed from the resin and an inner lead portion embedded in the resin, and the resin contains an aromatic compound having a benzene ring and/or a compound having a cyclohexane ring, and the benzene ring and/or the cyclohexane ring contained in the resin and a metal atom which is a main constitutional material of a surface material of the inner lead portion are arranged so as to be superposed one on the other at an interface at which the surface material of the inner lead portion and the resin are in contact with each other.

摘要翻译： 提供了一种半导体器件，其已经改善了引线和密封树脂（模塑树脂）之间的粘合性，因此它们之间不会发生剥离，并且具有高可靠性。 半导体器件包括半导体芯片，多个引线，其包括与半导体芯片电连接的作为主要构成材料的金属和用于密封半导体芯片的树脂，其中多个引线各自具有暴露于外部引线部分 所述树脂和嵌入树脂中的内引线部分，并且所述树脂含有具有苯环的芳族化合物和/或具有环己烷环的化合物，并且所述树脂中含有的苯环和/或环己烷环和金属 作为内部引线部分的表面材料的主要构成材料的原子被布置成在内引线部分和树脂的表面材料彼此接触的界面处彼此重叠。

公开(公告)号：US20110215288A1

公开(公告)日：2011-09-08

申请号：US13108174

申请日：2011-05-16

申请人： Yuichi MATSUI ,  Tomio IWASAKI ,  Norikatsu TAKAURA ,  Kenzo KUROTSUCHI

发明人： Yuichi MATSUI ,  Tomio IWASAKI ,  Norikatsu TAKAURA ,  Kenzo KUROTSUCHI

IPC分类号： H01L45/00

CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/1675

摘要： Since a chalcogenide material has low adhesion to a silicon oxide film, there is a problem in that it tends to separate from the film during the manufacturing step of a phase change memory. In addition, since the chalcogenide material has to be heated to its melting point or higher during resetting (amorphization) of the phase change memory, there is a problem of requiring extremely large rewriting current. An interfacial layer includes an extremely thin insulator or semiconductor having the function as both an adhesive layer and a high resistance layer (thermal resistance layer) is inserted between chalcogenide material layer/interlayer insulative film and between chalcogenide material layer/plug.

摘要翻译： 由于硫族化物材料对氧化硅膜的粘附性低，所以存在在相变存储器的制造工序中与膜分离的问题。 此外，由于在相变存储器的复位（非晶化）期间必须将硫属化物材料加热至其熔点以上，所以存在需要非常大的重写电流的问题。 界面层包括极薄的绝缘体或半导体，具有将粘合剂层和高电阻层（热电阻层）两者插入到硫族化物材料层/层间绝缘膜之间以及硫族化物材料层/插塞之间的功能。

公开(公告)号：US20110049689A1

公开(公告)日：2011-03-03

申请号：US12805834

申请日：2010-08-20

申请人： Tomio IWASAKI

发明人： Tomio IWASAKI

IPC分类号： H01L23/495 ,  H01L21/50

CPC分类号： H01L23/49582 ,  H01L23/295 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device in which an adhesion between a lead and a sealing body (mold sealing body) is improved to prevent the peering is provided. In a semiconductor device having a semiconductor chip, a plurality of leads electrically connected to the semiconductor chip and mainly made of metal and a sealing body for sealing the semiconductor chip, in order to improve the adhesion between the lead and the sealing body (mold sealing body), a material combination with good lattice matching is used as a combination of a surface material of the lead and a material of the sealing body, and the sealing body mainly made of acene is used.

摘要翻译： 提供了铅和密封体（模具密封体）之间的粘附性以防止对准的半导体器件。 在具有半导体芯片的半导体器件中，与半导体芯片电连接并主要由金属制成的多个引线和用于密封半导体芯片的密封体，以提高引线与密封体之间的密合性（模具密封 使用具有良好的晶格匹配的材料组合作为铅的表面材料和密封体的材料的组合，并且使用主要由苊构成的密封体。

公开(公告)号：US20090316292A1

公开(公告)日：2009-12-24

申请号：US12367574

申请日：2009-02-09

申请人： Tomio IWASAKI

发明人： Tomio IWASAKI

IPC分类号： G11B21/02 ,  G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/307

摘要： A magnetoresistive head is provided with high reliability and produced at a high yield rate. The magnetoresistive head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive effect film, and means for causing a current to flow in the direction of the thickness of the magnetoresistive effect film. The magnetoresistive effect film is provided between the lower magnetic shield layer and the upper magnetic shield layer. The magnetoresistive effect film is composed of a fixed layer, a non-magnetic layer, an insulating barrier layer and a free layer. The four layers of the magnetoresistive effect film are formed in this order. The insulating barrier layer is an oxide layer containing at least one of titanium and nickel.

摘要翻译： 磁阻头具有高可靠性并以高产率生产。 磁阻头包括下磁屏蔽层，上磁屏蔽层，磁阻效应膜，以及使电流沿磁阻效应膜的厚度方向流动的装置。 磁阻效应膜设置在下磁屏蔽层和上磁屏蔽层之间。 磁阻效应膜由固定层，非磁性层，绝缘阻挡层和自由层组成。 磁阻效应膜的四层依次形成。 绝缘阻挡层是含有钛和镍中的至少一种的氧化物层。

公开(公告)号：US20090154029A1

公开(公告)日：2009-06-18

申请号：US12272088

申请日：2008-11-17

申请人： Tomio IWASAKI

发明人： Tomio IWASAKI

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  Y10T428/1114 ,  Y10T428/1143

摘要： A magnetic reproduction head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive film formed between the lower and the upper magnetic shield layers, a refill film in an element height direction disposed in contact with a surface opposite a floating surface of the magnetoresistive film, and a refill film in a track width direction disposed on a side wall surface of the magnetoresistive film. The magnetoresistive film is a tunneling magnetoresistive film including a free layer, an insulating barrier layer, and a fixed layer. The insulating barrier layer is one of a magnesium oxide film, an aluminum oxide film, and a titanium oxide film which contains at least one of nitrogen and silicon.

摘要翻译： 磁性再现头包括下磁屏蔽层，上磁屏蔽层，形成在下磁屏蔽层和上磁屏蔽层之间的磁阻膜，元件高度方向上的补充膜设置成与浮动表面相对的表面接触 磁阻膜和设置在磁阻膜的侧壁表面上的轨道宽度方向的补充膜。 磁阻膜是包括自由层，绝缘阻挡层和固定层的隧穿磁阻膜。 绝缘阻挡层是包含氮和硅中的至少一种的氧化镁膜，氧化铝膜和氧化钛膜之一。

公开(公告)号：US20120074377A1

公开(公告)日：2012-03-29

申请号：US13314165

申请日：2011-12-07

申请人： YUICHI MATSUI ,  Nozomu MATSUZAKI ,  Norikatsu TAKAURA ,  Naoki YAMAMOTO ,  Hideyuki MATSUOKA ,  Tomio IWASAKI

发明人： YUICHI MATSUI ,  Nozomu MATSUZAKI ,  Norikatsu TAKAURA ,  Naoki YAMAMOTO ,  Hideyuki MATSUOKA ,  Tomio IWASAKI

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

公开(公告)号：US20100102680A1

公开(公告)日：2010-04-29

申请号：US12582723

申请日：2009-10-21

申请人： Tomio IWASAKI

发明人： Tomio IWASAKI

IPC分类号： H01L41/187 ,  H01L41/04

CPC分类号： H01L41/083 ,  H01L41/0471 ,  H01L41/0472 ,  H01L41/1871

摘要： A piezoelectric element that is high in piezoelectric performance and large in displacement and is reliable is provided. The piezoelectric element includes a piezoelectric material containing BaTi2O5 as the principal constituent material and an inner electrode that applies voltage to the piezoelectric material. In this piezoelectric element, an electrode material (a mixture of Ru and RuO2) excellent in lattice matching with the piezoelectric material BaTi2O5 is used as the principal constituent material of the inner electrode.

摘要翻译： 提供压电性能高，位移大且可靠的压电元件。 压电元件包括​​含有BaTi2O5作为主要构成材料的压电材料和向压电材料施加电压的内部电极。 在该压电元件中，使用与压电体BaTi2O5的晶格匹配优异的电极材料（Ru和RuO2的混合物）作为内部电极的主要构成材料。