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    Method of manufacturing grain-oriented electrical steel sheets
    1.
    发明授权
    Method of manufacturing grain-oriented electrical steel sheets 有权
    晶粒取向电工钢板的制造方法

    公开(公告)号：US06811619B2

    公开(公告)日：2004-11-02

    申请号：US10202117

    申请日：2002-07-23

    申请人： Yasuyuki Hayakawa ,  Hideo Yamagami ,  Seiji Okabe ,  Takeshi Imamura ,  Minoru Takashima ,  Mitsumasa Kurosawa

    发明人： Yasuyuki Hayakawa ,  Hideo Yamagami ,  Seiji Okabe ,  Takeshi Imamura ,  Minoru Takashima ,  Mitsumasa Kurosawa

    IPC分类号： H01F116

    CPC分类号： C22C38/60 ,  C21D8/1233 ,  C21D8/125 ,  C21D8/1255 ,  C21D8/1272 ,  C21D8/1283 ,  C22C38/004 ,  C22C38/02

    摘要： A method of manufacturing a grain-oriented steel sheet including hot-rolling a slab prepared using molten steel containing, by mass %, C of not more than about 0.08%, Si of about 2.0 to about 8.0% and Mn of about 0.005 to about 3.0%; optionally annealing the hot-rolled steel sheet; performing cold rolling once, or twice or more with intermediate annealing therebetween; performing primary recrystallization annealing in a low- or non-oxidizative atmosphere and adjusting the C content in the steel sheet after primary recrystallization annealing to be held in the range of about 0.005 to about 0.025 mass %; performing secondary recrystallization annealing; decarburization annealing; and, preferably, performing additional high-temperature continuous or batch annealing. A grain-oriented electrical steel sheet having a sufficiently high magnetic flux density and a low iron loss can be advantageously obtained even when it is manufactured without using an inhibitor.

    摘要翻译： 一种制造含有热轧钢板的方法，该方法包括以质量％计含有不大于约0.08％的Si，约2.0至约8.0％的Si和约0.005至约 3.0％; 任选地退火热轧钢板; 在其间进行中间退火，进行一次或两次以上的冷轧; 在低或非氧化性气氛中进行一次再结晶退火，并将一次再结晶退火后的钢板中的C含量调整为约0.005〜约0.025质量％的范围; 进行二次再结晶退火; 脱碳退火; 并且优选进行附加的高温连续或间歇退火。 即使在不使用抑制剂的情况下制造也可以有利地获得具有足够高的磁通密度和低铁损的晶粒取向电工钢板。

    Electrical steel sheet suitable for compact iron core and manufacturing method therefor
    5.
    发明授权
    Electrical steel sheet suitable for compact iron core and manufacturing method therefor 失效
    适用于紧凑型铁芯的电工钢板及其制造方法

    公开(公告)号：US06562473B1

    公开(公告)日：2003-05-13

    申请号：US09722017

    申请日：2000-11-27

    申请人： Seiji Okabe ,  Yasuyuki Hayakawa ,  Takeshi Imamura ,  Mitsumasa Kurosawa

    发明人： Seiji Okabe ,  Yasuyuki Hayakawa ,  Takeshi Imamura ,  Mitsumasa Kurosawa

    IPC分类号： B32B1504

    CPC分类号： C21D8/12 ,  C21D8/1227 ,  C21D8/1233 ,  C21D8/1261 ,  C21D8/1272 ,  H01F1/14775 ,  Y10S428/90 ,  Y10S428/928

    摘要： Electrical steel sheets having superior magnetic properties, anti-noise properties, and workability, are ideal for use a compact iron core material in electric apparatuses, such as compact transformers, motors, and electric generators. A totally new electrical steel sheet and a manufacturing method therefor are proposed, in which the electrical steel sheet is not only most advantageous in magnetic properties but also advantageous from economic point of view. That is, the electrical steel sheet of the present invention is composed of from about 2.0 to 8.0 wt % Si, from about 0.005 to 3.0 wt % Mn, from about 0.0010 to 0.020 wt % Al, balance essentially iron. The magnetic flux density B50(L) in a rolling direction and the magnetic flux density B50(C) in the direction perpendicular thereto are 1.70 T or more, and the B50(L)/B50(C) is 1.005 to 1.100. In addition, the secondary recrystallized grains inclined by 20′ or less with respect to the {100} orientation are present in the steel sheet at an areal ratio of 50 to 80%, and secondary recrystallized grains inclined by 20° or less with respect to the {110} orientation are present in the steel sheet at an areal ratio of 6 to 20%.

    摘要翻译： 具有优异的磁特性，抗噪声性能和可加工性的电工钢板，在紧凑型变压器，电动机和发电机等电气设备中使用紧凑的铁芯材料是理想的。 提出了一种全新的电工钢板及其制造方法，其中电磁钢板不仅在磁性方面最有利，而且从经济的观点出发也是有利的。 也就是说，本发明的电工钢板由约2.0〜8.0重量％的Si，约0.005〜3.0重量％的Mn，约0.0010〜0.020重量％的Al，余量基本上由铁构成。 轧制方向的磁通密度B50（L）和与其垂直的方向的磁通密度B50（C）为1.70T以上，B50（L）/ B50（℃）为1.005〜1.100。 此外，相对于{100} <001>取向倾斜20°以下的二次再结晶晶粒以50〜80％的面积比存在，并且二次再结晶晶粒倾斜20°以下 相对于{110} <001>取向，以6〜20％的面积比存在于钢板中。

    Semiconductor memory device and method of manufacturing the same
    6.
    发明授权
    Semiconductor memory device and method of manufacturing the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US08692312B2

    公开(公告)日：2014-04-08

    申请号：US13428506

    申请日：2012-03-23

    申请人： Yoshiaki Fukuzumi ,  Masaru Kito ,  Takeshi Imamura

    发明人： Yoshiaki Fukuzumi ,  Masaru Kito ,  Takeshi Imamura

    IPC分类号： H01L29/792

    CPC分类号： H01L29/7926 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a method of manufacturing a semiconductor memory device is provided. In the method, a laminated body in which a first silicon layer, a first sacrificial layer, a second silicon layer, and a second sacrificial layer are laminated in turn is formed. A first insulating film is formed on the laminated body. A trench is formed in the laminated body and the first insulating film. A third sacrificial layer is formed into the trench. The third sacrificial layer is etched by wet etching to be retreated from a top surface of the third sacrificial layer, thereby etching end faces of the first sacrificial layer and the second sacrificial layer.

    摘要翻译： 根据一个实施例，提供一种制造半导体存储器件的方法。 在该方法中，形成依次层叠有第一硅层，第一牺牲层，第二硅层和第二牺牲层的层叠体。 第一绝缘膜形成在层叠体上。 在层叠体和第一绝缘膜中形成沟槽。 第三牺牲层形成在沟槽中。 通过湿蚀刻蚀刻第三牺牲层以从第三牺牲层的顶表面撤回，从而蚀刻第一牺牲层和第二牺牲层的端面。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    7.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08598643B2

    公开(公告)日：2013-12-03

    申请号：US13235425

    申请日：2011-09-18

    申请人： Kaori Kawasaki ,  Yoshiaki Fukuzumi ,  Masaru Kito ,  Tomoko Fujiwara ,  Takeshi Imamura ,  Ryouhei Kirisawa ,  Hideaki Aochi

    发明人： Kaori Kawasaki ,  Yoshiaki Fukuzumi ,  Masaru Kito ,  Tomoko Fujiwara ,  Takeshi Imamura ,  Ryouhei Kirisawa ,  Hideaki Aochi

    IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/7926

    摘要： According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一导电层，第二导电层，第一电极间绝缘膜和堆叠在第一导电层上方的第三导电层，存储膜，半导体层， 绝缘构件和硅化物层。 存储膜和半导体层形成在设置在第二导电层，第一电极间绝缘膜和第三导电层中的通孔的内表面上。 绝缘构件埋设在分割第二导电层，第一电极间绝缘膜和第三导电层的狭缝中。 硅化物层形成在狭缝中的第二导电层和第三导电层的表面上。 沿着狭缝的内表面，第二导电层和第三导电层之间的距离比层叠方向长。

    Information, transformation and reverse transformation processing
    8.
    发明授权
    Information, transformation and reverse transformation processing 失效
    信息，转型和逆向转换处理

    公开(公告)号：US08131787B2

    公开(公告)日：2012-03-06

    申请号：US12123991

    申请日：2008-05-20

    申请人： Takeshi Imamura ,  Kent Tamura ,  Satoshi Makino ,  Toshiro Takase

    发明人： Takeshi Imamura ,  Kent Tamura ,  Satoshi Makino ,  Toshiro Takase

    IPC分类号： G06F7/00 ,  G06F17/30

    CPC分类号： G06F17/227 ,  Y10S707/99942

    摘要： A transformation processing system input data including a data record area for storing target date and a transformation processing identification information record area for storing transformation processing identification information about transformation processing executed upon the target data. The transformation processing system includes: a reverse transformation information recording unit which records a target data pointer indicating the data record area in transformed data, a transformation processing identification information pointer indicating the transformation processing identification information record area, and reverse transformation processing identification information about reverse transformation processing; a target data transformation unit which transforms the target data and records it in the data record area; and a transformation processing identification information recording unit which adds the transformation processing identification information about the transformation processing executed by the target data transformation unit to the transformation processing identification information record area in the input data.

    摘要翻译： 变换处理系统输入数据，包括用于存储目标日期的数据记录区域和用于存储关于在目标数据上执行的变换处理的变换处理识别信息的变换处理识别信息记录区域。 变换处理系统包括：逆变换信息记录单元，其在变换数据中记录指示数据记录区的目标数据指针，指示变换处理识别信息记录区的变换处理识别信息指针，以及反转变换处理识别信息 转换处理; 目标数据变换单元，其转换目标数据并将其记录在数据记录区域中; 以及变换处理识别信息记录单元，其将关于由目标数据变换单元执行的变换处理的变换处理识别信息添加到输入数据中的变换处理识别信息记录区域。

    Organic material-immobiling structure and method for production of the same, and peptide and DNA therefor
    9.
    发明授权
    Organic material-immobiling structure and method for production of the same, and peptide and DNA therefor 失效
    有机材料固定结构及其生产方法，以及肽和DNA

    公开(公告)号：US07919263B2

    公开(公告)日：2011-04-05

    申请号：US10548442

    申请日：2004-08-18

    申请人： Hidenori Shiotsuka ,  Takeshi Imamura ,  Tsuyoshi Nomoto ,  Miki Ogawa

    发明人： Hidenori Shiotsuka ,  Takeshi Imamura ,  Tsuyoshi Nomoto ,  Miki Ogawa

    IPC分类号： G01N31/00 ,  G01N33/53

    CPC分类号： C07K17/14 ,  C07K7/08 ,  C07K17/08 ,  C12N11/14 ,  G01N33/54353 ,  G01N33/552

    摘要： The invention provides an organic material-immobilizing structure employing new immobilization means, characterized in that at least a part of the surface of the substrate is comprised of one or more members containing silicon oxide, the organic material is bound to the surface of the substrate through a binding domain bound to the organic material and containing an amino acid sequence capable of binding to silicon oxide, selected from the group consisting of amino acid sequences of SEQ ID NOS: 1 and 2: Val-Ser-Pro-Met-Arg-Ser-Ala-Thr-Thr-His-Thr-Val; and Ile-Pro-Met-His-Val-His-His-Lys-His-Pro-His-Val, and derivatives thereof.

    摘要翻译： 本发明提供一种使用新的固定装置的有机材料固定结构，其特征在于，基底表面的至少一部分由含有氧化硅的一种或多种构件组成，有机材料通过 与有机材料结合并含有能够结合氧化硅的氨基酸序列的结合结构域，其选自SEQ ID NO：1和2的氨基酸序列：Val-Ser-Pro-Met-Arg-Ser -Ala-Thr-Thr-His-Thr-Val; 和Ile-Pro-Met-His-Val-His-His-Lys-His-Pro-His-Val及其衍生物。