公开(公告)号：US5315402A

公开(公告)日：1994-05-24

申请号：US932748

申请日：1992-08-25

申请人： Yasuyuki Ito ,  Takeshi Kawabe ,  Yukio Tojo ,  Takeo Takase

发明人： Yasuyuki Ito ,  Takeshi Kawabe ,  Yukio Tojo ,  Takeo Takase

IPC分类号： H04N5/85 ,  G11B11/18

CPC分类号： H04N5/85

摘要： A video signal recording/reproducing device has at least a frequency modulating unit which FM modulates information to be recorded on an optical disk memory, a laser driving pulse generating unit for generating a laser driving pulse derived from the frequency-modulated signal generated by the frequency modulating unit and for modifying the duty factor of the laser driving pulse in accordance with the linear velocity of the optical disk memory where recording is taking place; and a recording unit for controlling the laser power during recording to an optimum value in accordance with the linear velocity of the optical disk memory where recording is taking place. This arrangement enables reduction of the minimal length of recording bits resulting in reproduced signals of a level sufficient for obtaining reproduced images of a fine quality addition enables increase of the recording capacity of the optical disk memory.

摘要翻译： 视频信号记录/再现装置至少具有调制要记录在光盘存储器上的信息的频率调制单元，激光驱动脉冲产生单元，用于产生由频率产生的频率调制信号导出的激光驱动脉冲 并且用于根据正在进行记录的光盘存储器的线速度来修改激光驱动脉冲的占空因数; 以及记录单元，用于根据正在进行记录的光盘存储器的线速度将记录期间的激光功率控制到最佳值。 这种布置能够减少记录位的最小长度，从而产生足以获得精细质量附加的再现图像的再现信号，从而能够增加光盘存储器的记录容量。

公开(公告)号：US20100311251A1

公开(公告)日：2010-12-09

申请号：US12792274

申请日：2010-06-02

申请人： Mitsuhiro OKADA ,  Yukio Tojo

发明人： Mitsuhiro OKADA ,  Yukio Tojo

IPC分类号： H01L21/3205 ,  G05B21/00

CPC分类号： H01L21/3146 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312

摘要： A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

摘要翻译： 用于形成包括无定形碳膜的结构的批处理方法包括：通过在800-950℃的预处理温度下加热反应室的内部，进行从下层的表面除去水的预处理， 将从氮气和氨气组成的组中选出的预处理气体进入反应室，同时从反应室内排出气体; 然后通过在主处理温度下加热反应室的内部并在从反应室内排出气体的同时将烃气体供给到反应室中，进行下层形成非晶质碳膜的主要CVD。

公开(公告)号：US20050090123A1

公开(公告)日：2005-04-28

申请号：US10479718

申请日：2002-02-20

申请人： Kazuaki Nishimura ,  Yukio Tojo ,  Phillip Spaull ,  Kenji Tago

发明人： Kazuaki Nishimura ,  Yukio Tojo ,  Phillip Spaull ,  Kenji Tago

IPC分类号： C23C16/44 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/4405

摘要： A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

摘要翻译： 用于清洁热处理装置的清洁方法包括：加热步骤，其在300℃加热反应管的内部，以及清除步骤，去除沉积在热处理装置中的沉积物。 在清洗工序中，将含有氟气，氯气和氮气的清洗气体供给到加热到300℃的反应管的内部，除去氮化硅从而清洗热处理装置的内部。

公开(公告)号：US20120238107A1

公开(公告)日：2012-09-20

申请号：US13485424

申请日：2012-05-31

申请人： Mitsuhiro Okada ,  Yukio Tojo

发明人： Mitsuhiro Okada ,  Yukio Tojo

IPC分类号： H01L21/3205 ,  G05B15/02

CPC分类号： H01L21/3146 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312

摘要： A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

摘要翻译： 用于形成包括非晶碳膜的结构的加工方法包括通过在800-950℃的预处理温度下加热反应室的内部，进行从下层的表面除去水的预处理， 在从反应室内排出气体的同时，从氮气和氨气中选出的预处理气体进入反应室; 然后通过在主处理温度下加热反应室的内部并在从反应室内排出气体的同时将烃气体供给到反应室中，进行下层形成非晶质碳膜的主要CVD。

公开(公告)号：US08222162B2

公开(公告)日：2012-07-17

申请号：US12792274

申请日：2010-06-02

申请人： Mitsuhiro Okada ,  Yukio Tojo

发明人： Mitsuhiro Okada ,  Yukio Tojo

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3146 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312

摘要： A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

摘要翻译： 用于形成包括无定形碳膜的结构的批处理方法包括：通过在800-950℃的预处理温度下加热反应室的内部，进行从下层的表面除去水的预处理， 将从氮气和氨气组成的组中选出的预处理气体进入反应室，同时从反应室内排出气体; 然后通过在主处理温度下加热反应室的内部并在从反应室内排出气体的同时将烃气体供给到反应室中，进行下层形成非晶质碳膜的主要CVD。

公开(公告)号：US08652973B2

公开(公告)日：2014-02-18

申请号：US13485424

申请日：2012-05-31

申请人： Mitsuhiro Okada ,  Yukio Tojo

发明人： Mitsuhiro Okada ,  Yukio Tojo

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3146 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312

摘要： A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

摘要翻译： 用于形成包括非晶碳膜的结构的加工方法包括通过在800-950℃的预处理温度下加热反应室的内部，进行从下层的表面除去水的预处理， 在从反应室内排出气体的同时，从氮气和氨气中选出的预处理气体进入反应室; 然后通过在主处理温度下加热反应室的内部并在从反应室内排出气体的同时将烃气体供给到反应室中，进行下层形成非晶质碳膜的主要CVD。

公开(公告)号：US07727296B2

公开(公告)日：2010-06-01

申请号：US11905990

申请日：2007-10-05

申请人： Yukio Tojo ,  Naotaka Noro ,  Yoshiyuki Fujita ,  Yuji Ito

发明人： Yukio Tojo ,  Naotaka Noro ,  Yoshiyuki Fujita ,  Yuji Ito

IPC分类号： B01D45/00

CPC分类号： B01D45/08 ,  B01D45/06 ,  Y10S55/15 ,  Y10S438/905

摘要： A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.

摘要翻译： 收集单元设置在半导体处理装置的排气通道上以收集废气中所含的副产物。 收集单元包括可拆卸地设置在壳体内并被构造成收集一部分副产物的捕集体。 捕集体包括排列在废气的流动方向上的翅片，并且具有一部分副产物被沉积并被捕获的表面。 收集单元还包括设置在壳体内部并被配置为接收从捕获体或套管的内表面剥离的一部分副产品的接收机构，以防止该部分沉积在壳体的底部 。 接收机构构造成允许其上保持的副产物的一部分与来自上下的清洁气体接触。

公开(公告)号：US20050270405A1

公开(公告)日：2005-12-08

申请号：US11144400

申请日：2005-06-03

申请人： Yoshinori Tanida ,  Hiroaki Fukuda ,  Yukio Tojo

发明人： Yoshinori Tanida ,  Hiroaki Fukuda ,  Yukio Tojo

IPC分类号： G03B17/02 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232 ,  H04N5/225 ,  H04N5/335 ,  H04N5/357 ,  H04N101/00 ,  H05K9/00

CPC分类号： H04N5/2257 ,  H01L27/14618 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

摘要： The surface of the image pickup device 21 is covered by a transparent conductive member 26 that is made of, for example, a transparent conductive past resin and that is electrically connected to a ground potential GND. By having this arrangement, it is possible to electromagnetically shield the image pickup device 30 itself. The transparent conductive member 26 has one or more openings in the parts that correspond to the conductive unit of the signal wiring portion (the electrodes 23; A to D, F, and G, and the wiring patterns 25 that are connected thereto), out of the electrodes 23 and the wiring patterns 25 provided on the front surface side of the image pickup device body unit 21.

摘要翻译： 图像拾取装置21的表面被透明导电构件26覆盖，透明导电构件26由例如透明导电过剩树脂制成并且电连接到接地电位GND。 通过这种布置，可以对图像拾取装置30本身进行电磁屏蔽。 透明导电构件26在与信号布线部（电极23; A〜D，F，G以及与其连接的布线图案25）的导电单元对应的部分中具有一个以上的开口 的电极23和设置在图像拾取装置主体单元21的前表面侧的布线图案25。

公开(公告)号：US06925731B2

公开(公告)日：2005-08-09

申请号：US10479718

申请日：2002-02-20

申请人： Kazuaki Nishimura ,  Yukio Tojo ,  Phillip Spaull ,  Kenji Tago

发明人： Kazuaki Nishimura ,  Yukio Tojo ,  Phillip Spaull ,  Kenji Tago

IPC分类号： C23C16/44 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  F26B5/04

CPC分类号： C23C16/4405

摘要： A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

公开(公告)号：US08592324B2

公开(公告)日：2013-11-26

申请号：US13019553

申请日：2011-02-02

申请人： Mitsuhiro Okada ,  Yukio Tojo

发明人： Mitsuhiro Okada ,  Yukio Tojo

IPC分类号： H01L21/31 ,  C23C16/52

CPC分类号： H01L21/02115 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/0332

摘要： A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.

摘要翻译： 在底层上形成包含非晶质碳膜的叠层结构体的方法包括在下层的表面上形成含有Si-C键的初始层，通过向下层提供有机硅气体; 通过在其下表面形成有初始层的底层上的热成膜形成非晶碳膜，通过将含有烃化合物气体的成膜气体供给到下层上。