公开(公告)号：US20060286818A1

公开(公告)日：2006-12-21

申请号：US11155646

申请日：2005-06-17

申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

IPC分类号： H01L21/471

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，将含​​硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板 置于室内至低于约550摄氏度的温度。 在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3 3）3 -N。

公开(公告)号：US20060009041A1

公开(公告)日：2006-01-12

申请号：US10885969

申请日：2004-07-06

申请人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

公开(公告)号：US07488690B2

公开(公告)日：2009-02-10

申请号：US10885969

申请日：2004-07-06

申请人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/425 ,  H01L21/336

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

摘要翻译： 组件包括具有形成在彼此之上的氮化物蚀刻停止层的多层氮化物堆叠，每个氮化物蚀刻停止层使用成膜工艺形成。 制造多层氮化物堆叠的方法包括将衬底放置在单个晶片沉积室中，并在沉积之前瞬间热冲击衬底。 在衬底上沉积第一氮化物蚀刻停止层。 在第一氮化物蚀刻停止层上沉积第二氮化物蚀刻停止层。