摘要:
An organic light emitting display apparatus including sub pixels, each of the sub pixels including: first and second electrodes, the second electrode extending over the first electrode; and an intermediate layer disposed between the first and second electrodes, the intermediate layer including an emission layer, wherein a first portion of the first electrode, the second electrode, and the intermediate layer extends within a weak resonance region, the weak resonance region being configured to induce a first resonance of light generated by the emission layer between the first and second electrodes, and a second portion of the first electrode, the second electrode, and the intermediate layer extends within a strong resonance region, the strong resonance region being configured to induce a second resonance of light generated by the emission layer between the first and second electrodes, the second resonance being stronger than the first resonance.
摘要:
An organic light-emitting display apparatus includes an active layer of a thin film transistor (TFT), a gate electrode including a transparent conductive material or a metal that on the active layer, a first insulating layer on the substrate, source and drain electrodes electrically connected to the active layer, a second insulating layer between the gate electrode and the source and drain electrodes, a first conductive layer of a transparent conductive material on the first insulating layer, a second conductive layer on the first conductive layer, the second conductive layer being a metal, a third conductive layer on the second conductive layer, the third conductive layer being made of a same material as the source and drain electrodes, and being connected to the first conductive layer; and a protection layer that includes a transparent conductive oxide, the protection layer being on the third conductive layer.
摘要:
An organic light-emitting display apparatus including an active layer and a first insulating layer on a substrate; a gate electrode on first insulating layer and including a first transparent conductive layer and a first metal layer, a second insulating layer on the gate electrode and including contact holes exposing source and drain areas of the active layer; source and drain electrodes including a second metal layer in the contact holes and on the second insulating layer, a pixel electrode on the first insulating layer and including the first transparent conductive layer, a reflection layer, and a second transparent conductive layer, and a pixel-defining layer on the source and drain electrodes and exposing the pixel electrode. The pixel-defining layer covers upper edges of the first transparent conductive layer of the pixel electrode. The reflection layer and the second transparent conductive layer contact sides of the pixel-defining layer.
摘要:
Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.
摘要:
A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要:
An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
摘要:
A flat panel display according to an exemplary embodiment of the present invention includes a transistor disposed on a substrate, a planarizing layer having a trench, which includes a bottom surface and a side surface, disposed on the transistor, a reflective film disposed in the trench, a pixel electrode disposed on the reflective film and connected to the transistor, a partition wall having an opening to expose a portion of the pixel electrode, an organic light emitting member disposed on the reflective film, and a common electrode disposed on the organic light emitting member.