公开(公告)号：US07233390B2

公开(公告)日：2007-06-19

申请号：US10795915

申请日：2004-03-08

申请人： Yia-Chung Chang ,  Hanyou Chu ,  Jon Opsal

发明人： Yia-Chung Chang ,  Hanyou Chu ,  Jon Opsal

IPC分类号： G01N21/00

CPC分类号： G01N21/95607

摘要： A method for simulating the optical properties of samples having non-uniform line edges includes creating a model for the sample being analyzed. To simulate roughness, lines within the model are represented as combinations of three dimensional objects, such as circular or elliptical mesas. The three-dimensional objects are arranged in a partially overlapping linear fashion. The objects, when spaced closely together resemble a line with edge roughness that corresponds to the object size and pitch. A second method allows lines within the model to vary in width over their lengths. The model is evaluated using a suitable three-dimensional technique to simulate the optical properties of the sample being analyzed.

摘要翻译： 用于模拟具有不均匀线边缘的样品的光学性质的方法包括为正在分析的样品创建模型。 为了模拟粗糙度，模型中的线被表示为三维对象的组合，例如圆形或椭圆形台面。 三维物体以部分重叠的线性方式排列。 当物体间隔紧密的时候，物体的边缘粗糙度对应于物体的大小和间距。 第二种方法允许模型内的线宽度在其长度上变化。 使用合适的三维技术评估该模型，以模拟正在分析的样品的光学性质。

公开(公告)号：US07972878B2

公开(公告)日：2011-07-05

申请号：US12478084

申请日：2009-06-04

申请人： Yia-Chung Chang ,  David M T Kuo

发明人： Yia-Chung Chang ,  David M T Kuo

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/122 ,  H01L29/127 ,  H01L29/42324 ,  H01L29/66977 ,  H01L29/7888 ,  Y10S438/962

摘要： A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to the quantum dot memory cell and selecting parameters of the quantum dot memory cell such that the tunneling current through the quantum dot memory cell exhibits a bistable current for at least some values of the voltage applied to the quantum dot memory cell. The values for the tunneling current are determined on the basis of a density of states of the array of quantum dots.

摘要翻译： 一种制造量子点存储单元的方法，包括设置在第一电极和第二电极之间的量子点阵列的量子点存储单元包括获得通过量子点存储单元的隧穿电流的值作为电压的函数 施加到量子点存储单元并且选择量子点存储单元的参数，使得通过量子点存储单元的隧穿电流对施加到量子点存储单元的电压的至少一些值呈现双稳态电流。 基于量子点阵列的状态密度来确定隧穿电流的值。

公开(公告)号：US08937767B2

公开(公告)日：2015-01-20

申请号：US13468602

申请日：2012-05-10

申请人： Yia-Chung Chang ,  Li-Chuan Tang

发明人： Yia-Chung Chang ,  Li-Chuan Tang

IPC分类号： G02B27/22 ,  G02B27/24 ,  H04N13/04

CPC分类号： G02B27/2214 ,  H04N13/302

摘要： An auto-stereoscopic display and three-dimensional imaging double-sided mirror array being low-loss and nearly dispersion-less. The double-sided mirror array for auto-stereoscopic display and three-dimensional (3D) imaging comprises a display panel, a slab and an array. The display panel comprises multiple display pixels. The slab is in close contact with the display panel. The array comprises at least two vertical mirror strips, at least one vertical blinds and a spacing. Each vertical mirror strip is inserted into the slab. Each vertical blind is shorter than the vertical mirror strip and is inserted into the slab between two vertical mirror strips. The spacing is between the vertical mirror strip and the vertical blind and is chosen to match the width of the display pixels exactly.

摘要翻译： 自动立体显示和三维成像双面镜阵列是低损耗和几乎不分散的。 用于自动立体显示和三维（3D）成像的双面镜阵列包括显示面板，平板和阵列。 显示面板包括多个显示像素。 平板与显示面板紧密接触。 该阵列包括至少两个垂直镜条，至少一个垂直百叶窗和间隔。 每个垂直镜条被插入板中。 每个垂直盲板比垂直镜片条短，并且在两个垂直镜带之间插入板坯。 间隔在垂直镜片条和垂直百叶窗之间，并被选择为精确地匹配显示像素的宽度。

公开(公告)号：US20120287505A1

公开(公告)日：2012-11-15

申请号：US13468602

申请日：2012-05-10

申请人： Yia-Chung Chang ,  Li-Chuan Tang

发明人： Yia-Chung Chang ,  Li-Chuan Tang

IPC分类号： G02B27/22

CPC分类号： G02B27/2214 ,  H04N13/302

摘要： An auto-stereoscopic display and three-dimensional imaging double-sided mirror array being low-loss and nearly dispersion-less. The double-sided mirror array for auto-stereoscopic display and three-dimensional (3D) imaging comprises a display panel, a slab and an array. The display panel comprises multiple display pixels. The slab is in close contact with the display panel. The array comprises at least two vertical mirror strips, at least one vertical blinds and a spacing. Each vertical mirror strip is inserted into the slab. Each vertical blind is shorter than the vertical mirror strip and is inserted into the slab between two vertical mirror strips. The spacing is between the vertical mirror strip and the vertical blind and is chosen to match the width of the display pixels exactly.

摘要翻译： 自动立体显示和三维成像双面镜阵列是低损耗和几乎不分散的。 用于自动立体显示和三维（3D）成像的双面镜阵列包括显示面板，平板和阵列。 显示面板包括多个显示像素。 平板与显示面板紧密接触。 该阵列包括至少两个垂直镜条，至少一个垂直百叶窗和间隔。 每个垂直镜条被插入板中。 每个垂直盲板比垂直镜片条短，并且在两个垂直镜带之间插入板坯。 间隔在垂直镜片条和垂直百叶窗之间，并被选择为精确地匹配显示像素的宽度。

公开(公告)号：US20100308303A1

公开(公告)日：2010-12-09

申请号：US12478084

申请日：2009-06-04

申请人： Yia-Chung Chang ,  David M.T. Kuo

发明人： Yia-Chung Chang ,  David M.T. Kuo

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/122 ,  H01L29/127 ,  H01L29/42324 ,  H01L29/66977 ,  H01L29/7888 ,  Y10S438/962

摘要： A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to the quantum dot memory cell and selecting parameters of the quantum dot memory cell such that the tunneling current through the quantum dot memory cell exhibits a bistable current for at least some values of the voltage applied to the quantum dot memory cell. The values for the tunneling current are determined on the basis of a density of states of the array of quantum dots.

摘要翻译： 一种制造量子点存储单元的方法，包括设置在第一电极和第二电极之间的量子点阵列的量子点存储单元包括获得通过量子点存储单元的隧穿电流的值作为电压的函数 施加到量子点存储单元并且选择量子点存储单元的参数，使得通过量子点存储单元的隧穿电流对施加到量子点存储单元的电压的至少一些值呈现双稳态电流。 基于量子点阵列的状态密度来确定隧穿电流的值。

公开(公告)号：US20050072679A1

公开(公告)日：2005-04-07

申请号：US10849536

申请日：2004-05-19

申请人： Munir Nayfeh ,  Laila Abuhassan ,  Ammar Nayfeh ,  Yia-Chung Chang

发明人： Munir Nayfeh ,  Laila Abuhassan ,  Ammar Nayfeh ,  Yia-Chung Chang

IPC分类号： C01B33/02 ,  C25C1/22 ,  C25C5/02 ,  C25D1/00 ,  G02B6/02 ,  G02B6/10 ,  H01S3/16 ,  H01S5/04 ,  H01S5/10 ,  H01S5/30

CPC分类号： C25C5/02 ,  B82Y30/00 ,  C01B33/02 ,  C22B41/00 ,  C25C1/22 ,  H01S3/163 ,  H01S5/041 ,  H01S5/10 ,  H01S5/30 ,  H01S5/3031

摘要： In the invention, an electrochemical etching of crystalline germanium or a germanium alloy produces well-segregated chromatic clusters of nanoparticles. Distinct strong bands appear in the photoluminescence spectra under 350 nm excitation with the lowest peaks in wavelength identified to be at 430, 480, and 580 and 680-1100 nm. The material may be dispersed into a discrete set of luminescent nanoparticles of 1-3 nm in diameter, which may be prepared into colloids and reconstituted into films, crystals, etc.

摘要翻译： 在本发明中，结晶锗或锗合金的电化学蚀刻产生良好分离的纳米颗粒的色团。 在350nm激发下在光致发光光谱中出现不同的强条带，其中鉴定为在430,480和580和680-1100nm的波长中的最低峰。 该材料可以分散在直径为1-3nm的离散发光纳米颗粒组中，其可以制备成胶体并重构成膜，晶体等。